Fabrication and characterization of Pt-oxide electrode for FeRAM application

Woo Sik Kim, Soon Mok Ha, Hyung Ho Park, Ho Nyung Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

There has been a lot of works on ferroelectric thin films, since it becomes possible to apply them to memory materials in standard silicon integrated circuits. Pt/PZT/Pt system is a widely studied structure of capacitor for the application to FRAM, because of its remarkable electric properties and stability in device operating range. However, several problems are waiting for the answers, such as damage during etching, ferroelectric-electrode interaction, stability during silicon processing, and serious fatigue behavior. Especially, it has been well known that postmetal annealing (PMA) of Pt/PZT system in a hydrogen-containing ambient (e.g, forming gas) causes severe degradation of PZT thin film. In this study, to avoid the degradation caused by PMA, we fabricated the capacitor of Pt-oxide/PZT/Pt structure, and reported the resistance of Pt-oxide upper electrode against hydrogen-induced degradation.

Original languageEnglish
Title of host publicationDigest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages186-187
Number of pages2
ISBN (Electronic)4891140046, 9784891140045
DOIs
Publication statusPublished - 2000
EventInternational Microprocesses and Nanotechnology Conference, MNC 2000 - Tokyo, Japan
Duration: 2000 Jul 112000 Jul 13

Publication series

NameDigest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000

Other

OtherInternational Microprocesses and Nanotechnology Conference, MNC 2000
CountryJapan
CityTokyo
Period00/7/1100/7/13

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Kim, W. S., Ha, S. M., Park, H. H., & Lee, H. N. (2000). Fabrication and characterization of Pt-oxide electrode for FeRAM application. In Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000 (pp. 186-187). [872696] (Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2000.872696