Fabrication and characterization of Pt-oxide electrode for ferroelectric random access memory application

Woo Sik Kim; Ji Wan Kim; Hyung Ho Park; Ho Nyung Lee

doi:10.1143/jjap.39.7097

Fabrication and characterization of Pt-oxide electrode for ferroelectric random access memory application

Woo Sik Kim, Ji Wan Kim, Hyung Ho Park, Ho Nyung Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

This paper recommends Pt-oxide for noble electrode of capacitor in advanced ferroelectric random access memory (FRAM). Pt-oxide was deposited by an rf magnetron sputtering system with varying O₂ flow ratio [O₂/(O₂+Ar)] on sol-gel derived Pb(Zr,Ti)O₃. The deposition rate of Pt-oxide was higher than that of Pt because of its larger molar volume. However, the deposition rate decreased with further increase in O₂ flow ratio due to the oxidation of target surface. After the consideration of resistivity and chemical bonding state of Pt-oxides, 70% of O₂ flow ratio was adopted as a deposition condition of Pt-oxide. Pt-oxide/PZT/Pt structure showed fatigue free behavior without degradation of I-V characteristic. These results indicate that Pt-oxide is a promising electrode material for ferroelectric capacitor.

Original language	English
Pages (from-to)	7097-7099
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	39
Issue number	12 B
DOIs	https://doi.org/10.1143/jjap.39.7097
Publication status	Published - 2000 Dec

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Fabrication and characterization of Pt-oxide electrode for ferroelectric random access memory application",

abstract = "This paper recommends Pt-oxide for noble electrode of capacitor in advanced ferroelectric random access memory (FRAM). Pt-oxide was deposited by an rf magnetron sputtering system with varying O2 flow ratio [O2/(O2+Ar)] on sol-gel derived Pb(Zr,Ti)O3. The deposition rate of Pt-oxide was higher than that of Pt because of its larger molar volume. However, the deposition rate decreased with further increase in O2 flow ratio due to the oxidation of target surface. After the consideration of resistivity and chemical bonding state of Pt-oxides, 70% of O2 flow ratio was adopted as a deposition condition of Pt-oxide. Pt-oxide/PZT/Pt structure showed fatigue free behavior without degradation of I-V characteristic. These results indicate that Pt-oxide is a promising electrode material for ferroelectric capacitor.",

author = "Kim, {Woo Sik} and Kim, {Ji Wan} and Park, {Hyung Ho} and Lee, {Ho Nyung}",

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Fabrication and characterization of Pt-oxide electrode for ferroelectric random access memory application. / Kim, Woo Sik; Kim, Ji Wan; Park, Hyung Ho; Lee, Ho Nyung.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 12 B, 12.2000, p. 7097-7099.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

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AU - Kim, Ji Wan

AU - Park, Hyung Ho

AU - Lee, Ho Nyung

PY - 2000/12

Y1 - 2000/12

N2 - This paper recommends Pt-oxide for noble electrode of capacitor in advanced ferroelectric random access memory (FRAM). Pt-oxide was deposited by an rf magnetron sputtering system with varying O2 flow ratio [O2/(O2+Ar)] on sol-gel derived Pb(Zr,Ti)O3. The deposition rate of Pt-oxide was higher than that of Pt because of its larger molar volume. However, the deposition rate decreased with further increase in O2 flow ratio due to the oxidation of target surface. After the consideration of resistivity and chemical bonding state of Pt-oxides, 70% of O2 flow ratio was adopted as a deposition condition of Pt-oxide. Pt-oxide/PZT/Pt structure showed fatigue free behavior without degradation of I-V characteristic. These results indicate that Pt-oxide is a promising electrode material for ferroelectric capacitor.

AB - This paper recommends Pt-oxide for noble electrode of capacitor in advanced ferroelectric random access memory (FRAM). Pt-oxide was deposited by an rf magnetron sputtering system with varying O2 flow ratio [O2/(O2+Ar)] on sol-gel derived Pb(Zr,Ti)O3. The deposition rate of Pt-oxide was higher than that of Pt because of its larger molar volume. However, the deposition rate decreased with further increase in O2 flow ratio due to the oxidation of target surface. After the consideration of resistivity and chemical bonding state of Pt-oxides, 70% of O2 flow ratio was adopted as a deposition condition of Pt-oxide. Pt-oxide/PZT/Pt structure showed fatigue free behavior without degradation of I-V characteristic. These results indicate that Pt-oxide is a promising electrode material for ferroelectric capacitor.

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Fabrication and characterization of Pt-oxide electrode for ferroelectric random access memory application

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