Abstract
This paper recommends Pt-oxide for noble electrode of capacitor in advanced ferroelectric random access memory (FRAM). Pt-oxide was deposited by an rf magnetron sputtering system with varying O2 flow ratio [O2/(O2+Ar)] on sol-gel derived Pb(Zr,Ti)O3. The deposition rate of Pt-oxide was higher than that of Pt because of its larger molar volume. However, the deposition rate decreased with further increase in O2 flow ratio due to the oxidation of target surface. After the consideration of resistivity and chemical bonding state of Pt-oxides, 70% of O2 flow ratio was adopted as a deposition condition of Pt-oxide. Pt-oxide/PZT/Pt structure showed fatigue free behavior without degradation of I-V characteristic. These results indicate that Pt-oxide is a promising electrode material for ferroelectric capacitor.
| Original language | English |
|---|---|
| Pages (from-to) | 7097-7099 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 39 |
| Issue number | 12 B |
| Publication status | Published - 2000 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)