Fabrication and characterization of ZnO nanowire transistors with organic polymer as a dielectric layer

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Single-crystalline wurtzite ZnO nanowires were synthesized and used to fabricate field-effect transistors, using poly(4-vinyl phenol) polymer as a dielectric layer. The spin-coated, thin (120 nm) PVP layer exhibited quite a good dielectric behaviors, such as dielectric strength of ∼1.5 MV/cm (∼10-7 A/cm2), capacitance of 28.9 nF/cm2, and dielectric constant of ∼3.93. When compared to the bottom-gated ZnO nanowire devices with thermal SiO2 as a gate dielectric, the top-gated devices with the polymer dielectric showed much higher (∼5 times) mobility. This hybrid approach, i.e. inorganic single-crystalline semiconducting nanowires with organic polymer dielectrics, is shown to be promising for the nanowire-based devices to mechanically flexible applications.

Original languageEnglish
Pages (from-to)126-130
Number of pages5
JournalSolid State Communications
Volume148
Issue number3-4
DOIs
Publication statusPublished - 2008 Oct 1

Fingerprint

Organic polymers
Nanowires
Transistors
nanowires
transistors
Fabrication
fabrication
polymers
Polymers
Crystalline materials
Gate dielectrics
Field effect transistors
Phenol
Phenols
Permittivity
Capacitance
wurtzite
phenols
field effect transistors
capacitance

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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title = "Fabrication and characterization of ZnO nanowire transistors with organic polymer as a dielectric layer",
abstract = "Single-crystalline wurtzite ZnO nanowires were synthesized and used to fabricate field-effect transistors, using poly(4-vinyl phenol) polymer as a dielectric layer. The spin-coated, thin (120 nm) PVP layer exhibited quite a good dielectric behaviors, such as dielectric strength of ∼1.5 MV/cm (∼10-7 A/cm2), capacitance of 28.9 nF/cm2, and dielectric constant of ∼3.93. When compared to the bottom-gated ZnO nanowire devices with thermal SiO2 as a gate dielectric, the top-gated devices with the polymer dielectric showed much higher (∼5 times) mobility. This hybrid approach, i.e. inorganic single-crystalline semiconducting nanowires with organic polymer dielectrics, is shown to be promising for the nanowire-based devices to mechanically flexible applications.",
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Fabrication and characterization of ZnO nanowire transistors with organic polymer as a dielectric layer. / Choi, Ji Hyuk; Khang, Dahl Young; Myoung, Jae Min.

In: Solid State Communications, Vol. 148, No. 3-4, 01.10.2008, p. 126-130.

Research output: Contribution to journalArticle

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AB - Single-crystalline wurtzite ZnO nanowires were synthesized and used to fabricate field-effect transistors, using poly(4-vinyl phenol) polymer as a dielectric layer. The spin-coated, thin (120 nm) PVP layer exhibited quite a good dielectric behaviors, such as dielectric strength of ∼1.5 MV/cm (∼10-7 A/cm2), capacitance of 28.9 nF/cm2, and dielectric constant of ∼3.93. When compared to the bottom-gated ZnO nanowire devices with thermal SiO2 as a gate dielectric, the top-gated devices with the polymer dielectric showed much higher (∼5 times) mobility. This hybrid approach, i.e. inorganic single-crystalline semiconducting nanowires with organic polymer dielectrics, is shown to be promising for the nanowire-based devices to mechanically flexible applications.

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