Abstract
Single-crystalline wurtzite ZnO nanowires were synthesized and used to fabricate field-effect transistors, using poly(4-vinyl phenol) polymer as a dielectric layer. The spin-coated, thin (120 nm) PVP layer exhibited quite a good dielectric behaviors, such as dielectric strength of ∼1.5 MV/cm (∼10-7 A/cm2), capacitance of 28.9 nF/cm2, and dielectric constant of ∼3.93. When compared to the bottom-gated ZnO nanowire devices with thermal SiO2 as a gate dielectric, the top-gated devices with the polymer dielectric showed much higher (∼5 times) mobility. This hybrid approach, i.e. inorganic single-crystalline semiconducting nanowires with organic polymer dielectrics, is shown to be promising for the nanowire-based devices to mechanically flexible applications.
| Original language | English |
|---|---|
| Pages (from-to) | 126-130 |
| Number of pages | 5 |
| Journal | Solid State Communications |
| Volume | 148 |
| Issue number | 3-4 |
| DOIs | |
| Publication status | Published - 2008 Oct 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
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Fabrication and characterization of ZnO nanowire transistors with organic polymer as a dielectric layer. / Choi, Ji Hyuk; Khang, Dahl Young; Myoung, Jae Min.
In: Solid State Communications, Vol. 148, No. 3-4, 01.10.2008, p. 126-130.Research output: Contribution to journal › Article
TY - JOUR
T1 - Fabrication and characterization of ZnO nanowire transistors with organic polymer as a dielectric layer
AU - Choi, Ji Hyuk
AU - Khang, Dahl Young
AU - Myoung, Jae Min
PY - 2008/10/1
Y1 - 2008/10/1
N2 - Single-crystalline wurtzite ZnO nanowires were synthesized and used to fabricate field-effect transistors, using poly(4-vinyl phenol) polymer as a dielectric layer. The spin-coated, thin (120 nm) PVP layer exhibited quite a good dielectric behaviors, such as dielectric strength of ∼1.5 MV/cm (∼10-7 A/cm2), capacitance of 28.9 nF/cm2, and dielectric constant of ∼3.93. When compared to the bottom-gated ZnO nanowire devices with thermal SiO2 as a gate dielectric, the top-gated devices with the polymer dielectric showed much higher (∼5 times) mobility. This hybrid approach, i.e. inorganic single-crystalline semiconducting nanowires with organic polymer dielectrics, is shown to be promising for the nanowire-based devices to mechanically flexible applications.
AB - Single-crystalline wurtzite ZnO nanowires were synthesized and used to fabricate field-effect transistors, using poly(4-vinyl phenol) polymer as a dielectric layer. The spin-coated, thin (120 nm) PVP layer exhibited quite a good dielectric behaviors, such as dielectric strength of ∼1.5 MV/cm (∼10-7 A/cm2), capacitance of 28.9 nF/cm2, and dielectric constant of ∼3.93. When compared to the bottom-gated ZnO nanowire devices with thermal SiO2 as a gate dielectric, the top-gated devices with the polymer dielectric showed much higher (∼5 times) mobility. This hybrid approach, i.e. inorganic single-crystalline semiconducting nanowires with organic polymer dielectrics, is shown to be promising for the nanowire-based devices to mechanically flexible applications.
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U2 - 10.1016/j.ssc.2008.07.040
DO - 10.1016/j.ssc.2008.07.040
M3 - Article
AN - SCOPUS:50449091041
VL - 148
SP - 126
EP - 130
JO - Solid State Communications
JF - Solid State Communications
SN - 0038-1098
IS - 3-4
ER -