Fabrication and characterization of ZnO single nanowire-based hydrogen sensor

Sachindra Nath Das, Jyoti Prakash Kar, Ji Hyuk Choi, Tae Lee, Kyeong Ju Moon, Jae Min Myoung

Research output: Contribution to journalArticle

122 Citations (Scopus)

Abstract

Vertically aligned ZnO nanowires were grown on c-plane sapphire substrate by metal organic chemical vapor deposition technique. The nanowires were single crystalline and structurally uniform and did not exhibit any noticeable defects. Pt/ZnO single nanowire Schottky diodes were fabricated by using e-beam lithography and then characterized by measuring temperature-dependent I-V characteristics. The diode exhibited a low Schottky barrier height of 0.42 V and ideality factor of 1.6 at room temperature. Temperature-dependent hydrogensensing measurements were carried out with different hydrogen concentrations. A good sensing characteristic (S ≈ 90%) has been observed at room temperature with a response time of ∼55 s.

Original languageEnglish
Pages (from-to)1689-1693
Number of pages5
JournalJournal of Physical Chemistry C
Volume114
Issue number3
DOIs
Publication statusPublished - 2010 Jan 28

Fingerprint

Nanowires
Hydrogen
nanowires
Fabrication
fabrication
sensors
Sensors
hydrogen
Diodes
room temperature
Schottky diodes
Organic Chemicals
Temperature
metalorganic chemical vapor deposition
Aluminum Oxide
Organic chemicals
sapphire
lithography
diodes
Sapphire

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Cite this

Das, Sachindra Nath ; Kar, Jyoti Prakash ; Choi, Ji Hyuk ; Lee, Tae ; Moon, Kyeong Ju ; Myoung, Jae Min. / Fabrication and characterization of ZnO single nanowire-based hydrogen sensor. In: Journal of Physical Chemistry C. 2010 ; Vol. 114, No. 3. pp. 1689-1693.
@article{d8ed0031224646c39ab1bbff4f0562c2,
title = "Fabrication and characterization of ZnO single nanowire-based hydrogen sensor",
abstract = "Vertically aligned ZnO nanowires were grown on c-plane sapphire substrate by metal organic chemical vapor deposition technique. The nanowires were single crystalline and structurally uniform and did not exhibit any noticeable defects. Pt/ZnO single nanowire Schottky diodes were fabricated by using e-beam lithography and then characterized by measuring temperature-dependent I-V characteristics. The diode exhibited a low Schottky barrier height of 0.42 V and ideality factor of 1.6 at room temperature. Temperature-dependent hydrogensensing measurements were carried out with different hydrogen concentrations. A good sensing characteristic (S ≈ 90{\%}) has been observed at room temperature with a response time of ∼55 s.",
author = "Das, {Sachindra Nath} and Kar, {Jyoti Prakash} and Choi, {Ji Hyuk} and Tae Lee and Moon, {Kyeong Ju} and Myoung, {Jae Min}",
year = "2010",
month = "1",
day = "28",
doi = "10.1021/jp910515b",
language = "English",
volume = "114",
pages = "1689--1693",
journal = "Journal of Physical Chemistry C",
issn = "1932-7447",
publisher = "American Chemical Society",
number = "3",

}

Fabrication and characterization of ZnO single nanowire-based hydrogen sensor. / Das, Sachindra Nath; Kar, Jyoti Prakash; Choi, Ji Hyuk; Lee, Tae; Moon, Kyeong Ju; Myoung, Jae Min.

In: Journal of Physical Chemistry C, Vol. 114, No. 3, 28.01.2010, p. 1689-1693.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Fabrication and characterization of ZnO single nanowire-based hydrogen sensor

AU - Das, Sachindra Nath

AU - Kar, Jyoti Prakash

AU - Choi, Ji Hyuk

AU - Lee, Tae

AU - Moon, Kyeong Ju

AU - Myoung, Jae Min

PY - 2010/1/28

Y1 - 2010/1/28

N2 - Vertically aligned ZnO nanowires were grown on c-plane sapphire substrate by metal organic chemical vapor deposition technique. The nanowires were single crystalline and structurally uniform and did not exhibit any noticeable defects. Pt/ZnO single nanowire Schottky diodes were fabricated by using e-beam lithography and then characterized by measuring temperature-dependent I-V characteristics. The diode exhibited a low Schottky barrier height of 0.42 V and ideality factor of 1.6 at room temperature. Temperature-dependent hydrogensensing measurements were carried out with different hydrogen concentrations. A good sensing characteristic (S ≈ 90%) has been observed at room temperature with a response time of ∼55 s.

AB - Vertically aligned ZnO nanowires were grown on c-plane sapphire substrate by metal organic chemical vapor deposition technique. The nanowires were single crystalline and structurally uniform and did not exhibit any noticeable defects. Pt/ZnO single nanowire Schottky diodes were fabricated by using e-beam lithography and then characterized by measuring temperature-dependent I-V characteristics. The diode exhibited a low Schottky barrier height of 0.42 V and ideality factor of 1.6 at room temperature. Temperature-dependent hydrogensensing measurements were carried out with different hydrogen concentrations. A good sensing characteristic (S ≈ 90%) has been observed at room temperature with a response time of ∼55 s.

UR - http://www.scopus.com/inward/record.url?scp=77249153341&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77249153341&partnerID=8YFLogxK

U2 - 10.1021/jp910515b

DO - 10.1021/jp910515b

M3 - Article

AN - SCOPUS:77249153341

VL - 114

SP - 1689

EP - 1693

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

SN - 1932-7447

IS - 3

ER -