Fabrication and electrical characterization of heterojunction Mn-doped GaN nanowire diodes on n-Si substrates (GaN:Mn NW/n-Si)

Tae Hong Kim, Chan Oh Jang, Han Kyu Seong, Heon-Jin Choi, Sang Kwon Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We demonstrated that manganese (Mn)-doped GaN nanowires (NWs) exhibit p-type characteristics using current-voltage (I-V) characteristics in both heterojunction p-n structures (GaN:Mn NWs/n-Si substrate) and p-p structures (GaN:Mn NWs/p-Si). The heterojunction p-n diodes were formed by the coupling of the Mn-doped GaN NWs with an n-Si substrate by means of an alternating current (AC) dielectrophoresis-assisted assembly deposition technique. The GaN:Mn NWs/n-Si diode showed a clear current-rectifying behavior with a forward voltage drop of 2.4 V to 2.8 V, an ideality factor of 30 to 37, and a parasitic resistance in the range of 93 kΩ to 130 kΩ. On the other hand, we observed that other heterojunction structures (GaN:Mn NWs/p-Si) showed no rectifying behaviors as seen in p-p junction structures.

Original languageEnglish
Pages (from-to)505-510
Number of pages6
JournalJournal of Electronic Materials
Volume38
Issue number4
DOIs
Publication statusPublished - 2009 Apr 1

Fingerprint

Manganese
Nanowires
Heterojunctions
manganese
heterojunctions
Diodes
nanowires
diodes
Fabrication
fabrication
Substrates
electric potential
Current voltage characteristics
Electrophoresis
alternating current
assembly

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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title = "Fabrication and electrical characterization of heterojunction Mn-doped GaN nanowire diodes on n-Si substrates (GaN:Mn NW/n-Si)",
abstract = "We demonstrated that manganese (Mn)-doped GaN nanowires (NWs) exhibit p-type characteristics using current-voltage (I-V) characteristics in both heterojunction p-n structures (GaN:Mn NWs/n-Si substrate) and p-p structures (GaN:Mn NWs/p-Si). The heterojunction p-n diodes were formed by the coupling of the Mn-doped GaN NWs with an n-Si substrate by means of an alternating current (AC) dielectrophoresis-assisted assembly deposition technique. The GaN:Mn NWs/n-Si diode showed a clear current-rectifying behavior with a forward voltage drop of 2.4 V to 2.8 V, an ideality factor of 30 to 37, and a parasitic resistance in the range of 93 kΩ to 130 kΩ. On the other hand, we observed that other heterojunction structures (GaN:Mn NWs/p-Si) showed no rectifying behaviors as seen in p-p junction structures.",
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Fabrication and electrical characterization of heterojunction Mn-doped GaN nanowire diodes on n-Si substrates (GaN:Mn NW/n-Si). / Kim, Tae Hong; Jang, Chan Oh; Seong, Han Kyu; Choi, Heon-Jin; Lee, Sang Kwon.

In: Journal of Electronic Materials, Vol. 38, No. 4, 01.04.2009, p. 505-510.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Fabrication and electrical characterization of heterojunction Mn-doped GaN nanowire diodes on n-Si substrates (GaN:Mn NW/n-Si)

AU - Kim, Tae Hong

AU - Jang, Chan Oh

AU - Seong, Han Kyu

AU - Choi, Heon-Jin

AU - Lee, Sang Kwon

PY - 2009/4/1

Y1 - 2009/4/1

N2 - We demonstrated that manganese (Mn)-doped GaN nanowires (NWs) exhibit p-type characteristics using current-voltage (I-V) characteristics in both heterojunction p-n structures (GaN:Mn NWs/n-Si substrate) and p-p structures (GaN:Mn NWs/p-Si). The heterojunction p-n diodes were formed by the coupling of the Mn-doped GaN NWs with an n-Si substrate by means of an alternating current (AC) dielectrophoresis-assisted assembly deposition technique. The GaN:Mn NWs/n-Si diode showed a clear current-rectifying behavior with a forward voltage drop of 2.4 V to 2.8 V, an ideality factor of 30 to 37, and a parasitic resistance in the range of 93 kΩ to 130 kΩ. On the other hand, we observed that other heterojunction structures (GaN:Mn NWs/p-Si) showed no rectifying behaviors as seen in p-p junction structures.

AB - We demonstrated that manganese (Mn)-doped GaN nanowires (NWs) exhibit p-type characteristics using current-voltage (I-V) characteristics in both heterojunction p-n structures (GaN:Mn NWs/n-Si substrate) and p-p structures (GaN:Mn NWs/p-Si). The heterojunction p-n diodes were formed by the coupling of the Mn-doped GaN NWs with an n-Si substrate by means of an alternating current (AC) dielectrophoresis-assisted assembly deposition technique. The GaN:Mn NWs/n-Si diode showed a clear current-rectifying behavior with a forward voltage drop of 2.4 V to 2.8 V, an ideality factor of 30 to 37, and a parasitic resistance in the range of 93 kΩ to 130 kΩ. On the other hand, we observed that other heterojunction structures (GaN:Mn NWs/p-Si) showed no rectifying behaviors as seen in p-p junction structures.

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