Abstract
We demonstrated that manganese (Mn)-doped GaN nanowires (NWs) exhibit p-type characteristics using current-voltage (I-V) characteristics in both heterojunction p-n structures (GaN:Mn NWs/n-Si substrate) and p-p structures (GaN:Mn NWs/p-Si). The heterojunction p-n diodes were formed by the coupling of the Mn-doped GaN NWs with an n-Si substrate by means of an alternating current (AC) dielectrophoresis-assisted assembly deposition technique. The GaN:Mn NWs/n-Si diode showed a clear current-rectifying behavior with a forward voltage drop of 2.4 V to 2.8 V, an ideality factor of 30 to 37, and a parasitic resistance in the range of 93 kΩ to 130 kΩ. On the other hand, we observed that other heterojunction structures (GaN:Mn NWs/p-Si) showed no rectifying behaviors as seen in p-p junction structures.
| Original language | English |
|---|---|
| Pages (from-to) | 505-510 |
| Number of pages | 6 |
| Journal | Journal of Electronic Materials |
| Volume | 38 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2009 Apr 1 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
}
Fabrication and electrical characterization of heterojunction Mn-doped GaN nanowire diodes on n-Si substrates (GaN:Mn NW/n-Si). / Kim, Tae Hong; Jang, Chan Oh; Seong, Han Kyu; Choi, Heon Jin; Lee, Sang Kwon.
In: Journal of Electronic Materials, Vol. 38, No. 4, 01.04.2009, p. 505-510.Research output: Contribution to journal › Article
TY - JOUR
T1 - Fabrication and electrical characterization of heterojunction Mn-doped GaN nanowire diodes on n-Si substrates (GaN:Mn NW/n-Si)
AU - Kim, Tae Hong
AU - Jang, Chan Oh
AU - Seong, Han Kyu
AU - Choi, Heon Jin
AU - Lee, Sang Kwon
PY - 2009/4/1
Y1 - 2009/4/1
N2 - We demonstrated that manganese (Mn)-doped GaN nanowires (NWs) exhibit p-type characteristics using current-voltage (I-V) characteristics in both heterojunction p-n structures (GaN:Mn NWs/n-Si substrate) and p-p structures (GaN:Mn NWs/p-Si). The heterojunction p-n diodes were formed by the coupling of the Mn-doped GaN NWs with an n-Si substrate by means of an alternating current (AC) dielectrophoresis-assisted assembly deposition technique. The GaN:Mn NWs/n-Si diode showed a clear current-rectifying behavior with a forward voltage drop of 2.4 V to 2.8 V, an ideality factor of 30 to 37, and a parasitic resistance in the range of 93 kΩ to 130 kΩ. On the other hand, we observed that other heterojunction structures (GaN:Mn NWs/p-Si) showed no rectifying behaviors as seen in p-p junction structures.
AB - We demonstrated that manganese (Mn)-doped GaN nanowires (NWs) exhibit p-type characteristics using current-voltage (I-V) characteristics in both heterojunction p-n structures (GaN:Mn NWs/n-Si substrate) and p-p structures (GaN:Mn NWs/p-Si). The heterojunction p-n diodes were formed by the coupling of the Mn-doped GaN NWs with an n-Si substrate by means of an alternating current (AC) dielectrophoresis-assisted assembly deposition technique. The GaN:Mn NWs/n-Si diode showed a clear current-rectifying behavior with a forward voltage drop of 2.4 V to 2.8 V, an ideality factor of 30 to 37, and a parasitic resistance in the range of 93 kΩ to 130 kΩ. On the other hand, we observed that other heterojunction structures (GaN:Mn NWs/p-Si) showed no rectifying behaviors as seen in p-p junction structures.
UR - http://www.scopus.com/inward/record.url?scp=61849086788&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=61849086788&partnerID=8YFLogxK
U2 - 10.1007/s11664-009-0675-9
DO - 10.1007/s11664-009-0675-9
M3 - Article
AN - SCOPUS:61849086788
VL - 38
SP - 505
EP - 510
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 4
ER -