Fabrication and electrical characterization of heterojunction Mn-doped GaN nanowire diodes on n-Si substrates (GaN:Mn NW/n-Si)

Tae Hong Kim; Chan Oh Jang; Han Kyu Seong; Heon Jin Choi; Sang Kwon Lee

doi:10.1007/s11664-009-0675-9

Fabrication and electrical characterization of heterojunction Mn-doped GaN nanowire diodes on n-Si substrates (GaN:Mn NW/n-Si)

Tae Hong Kim, Chan Oh Jang, Han Kyu Seong, Heon Jin Choi, Sang Kwon Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We demonstrated that manganese (Mn)-doped GaN nanowires (NWs) exhibit p-type characteristics using current-voltage (I-V) characteristics in both heterojunction p-n structures (GaN:Mn NWs/n-Si substrate) and p-p structures (GaN:Mn NWs/p-Si). The heterojunction p-n diodes were formed by the coupling of the Mn-doped GaN NWs with an n-Si substrate by means of an alternating current (AC) dielectrophoresis-assisted assembly deposition technique. The GaN:Mn NWs/n-Si diode showed a clear current-rectifying behavior with a forward voltage drop of 2.4 V to 2.8 V, an ideality factor of 30 to 37, and a parasitic resistance in the range of 93 kΩ to 130 kΩ. On the other hand, we observed that other heterojunction structures (GaN:Mn NWs/p-Si) showed no rectifying behaviors as seen in p-p junction structures.

Original language	English
Pages (from-to)	505-510
Number of pages	6
Journal	Journal of Electronic Materials
Volume	38
Issue number	4
DOIs	https://doi.org/10.1007/s11664-009-0675-9
Publication status	Published - 2009 Apr

Bibliographical note

Funding Information:
This work was supported by the Korea Research Foundation Grant funded by the Korean Government (KRF-2008-005-J00301). Prof. Choi is grateful for support from the program of the National Research Laboratory of the Korean Ministry of Science and Technology.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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@article{91081c0220044a96afc6b907c886216e,

title = "Fabrication and electrical characterization of heterojunction Mn-doped GaN nanowire diodes on n-Si substrates (GaN:Mn NW/n-Si)",

abstract = "We demonstrated that manganese (Mn)-doped GaN nanowires (NWs) exhibit p-type characteristics using current-voltage (I-V) characteristics in both heterojunction p-n structures (GaN:Mn NWs/n-Si substrate) and p-p structures (GaN:Mn NWs/p-Si). The heterojunction p-n diodes were formed by the coupling of the Mn-doped GaN NWs with an n-Si substrate by means of an alternating current (AC) dielectrophoresis-assisted assembly deposition technique. The GaN:Mn NWs/n-Si diode showed a clear current-rectifying behavior with a forward voltage drop of 2.4 V to 2.8 V, an ideality factor of 30 to 37, and a parasitic resistance in the range of 93 kΩ to 130 kΩ. On the other hand, we observed that other heterojunction structures (GaN:Mn NWs/p-Si) showed no rectifying behaviors as seen in p-p junction structures.",

author = "Kim, {Tae Hong} and Jang, {Chan Oh} and Seong, {Han Kyu} and Choi, {Heon Jin} and Lee, {Sang Kwon}",

note = "Funding Information: This work was supported by the Korea Research Foundation Grant funded by the Korean Government (KRF-2008-005-J00301). Prof. Choi is grateful for support from the program of the National Research Laboratory of the Korean Ministry of Science and Technology.",

year = "2009",

month = apr,

doi = "10.1007/s11664-009-0675-9",

language = "English",

volume = "38",

pages = "505--510",

journal = "Journal of Electronic Materials",

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TY - JOUR

T1 - Fabrication and electrical characterization of heterojunction Mn-doped GaN nanowire diodes on n-Si substrates (GaN:Mn NW/n-Si)

AU - Kim, Tae Hong

AU - Jang, Chan Oh

AU - Seong, Han Kyu

AU - Choi, Heon Jin

AU - Lee, Sang Kwon

N1 - Funding Information: This work was supported by the Korea Research Foundation Grant funded by the Korean Government (KRF-2008-005-J00301). Prof. Choi is grateful for support from the program of the National Research Laboratory of the Korean Ministry of Science and Technology.

PY - 2009/4

Y1 - 2009/4

N2 - We demonstrated that manganese (Mn)-doped GaN nanowires (NWs) exhibit p-type characteristics using current-voltage (I-V) characteristics in both heterojunction p-n structures (GaN:Mn NWs/n-Si substrate) and p-p structures (GaN:Mn NWs/p-Si). The heterojunction p-n diodes were formed by the coupling of the Mn-doped GaN NWs with an n-Si substrate by means of an alternating current (AC) dielectrophoresis-assisted assembly deposition technique. The GaN:Mn NWs/n-Si diode showed a clear current-rectifying behavior with a forward voltage drop of 2.4 V to 2.8 V, an ideality factor of 30 to 37, and a parasitic resistance in the range of 93 kΩ to 130 kΩ. On the other hand, we observed that other heterojunction structures (GaN:Mn NWs/p-Si) showed no rectifying behaviors as seen in p-p junction structures.

AB - We demonstrated that manganese (Mn)-doped GaN nanowires (NWs) exhibit p-type characteristics using current-voltage (I-V) characteristics in both heterojunction p-n structures (GaN:Mn NWs/n-Si substrate) and p-p structures (GaN:Mn NWs/p-Si). The heterojunction p-n diodes were formed by the coupling of the Mn-doped GaN NWs with an n-Si substrate by means of an alternating current (AC) dielectrophoresis-assisted assembly deposition technique. The GaN:Mn NWs/n-Si diode showed a clear current-rectifying behavior with a forward voltage drop of 2.4 V to 2.8 V, an ideality factor of 30 to 37, and a parasitic resistance in the range of 93 kΩ to 130 kΩ. On the other hand, we observed that other heterojunction structures (GaN:Mn NWs/p-Si) showed no rectifying behaviors as seen in p-p junction structures.

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