Fabrication and electrical transport properties of CVD grown silicon carbide nanowires (SiC NWs) for field effect transistor

Han Kyu Seong, Seung Yong Lee, Heon Jin Choi, Tae Hong Kim, Nam Kyu Cho, Kee Suk Nahm, Sang Kwon Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Citations (Scopus)

Abstract

We demonstrate the fabrication and the electrical transport properties of single crystalline 3C silicon carbide nanowires (SiC NWs). The growth of SiC NWs was carried out in a chemical vapor deposition (CVD) furnace. Methyltrichlorosilane (MTS, CH3SiCl3) was chosen as a source precursor. SiC NWs had diameters of less than 100 nm and lengths of several μm. For electrical transport measurements, as-gown SiC NWs were prepared on a highly doped silicon wafer, pre-patterned by a photo-lithography process, with a 400 nm thick SiO2 layer. Source and drain electrodes were defined by e-beam lithography (EBL). Prior to the metal deposition (Ti/Au : 40 nm/70 nm) by thermal evaporation, the native oxide on SiC NWs was removed by buffered HF. The estimated mobility of carriers is 15 cm2/(Vs) for a source-drain voltage (VSD) of 0.02 V. It is very low compared to that expected in bulk and/or thin film 3C-SiC The electrical measurements from nanowire-based field effect transistor (FET) structures illustrate that SiC NWs are weak n-type semiconductor. We have also demonstrated a powerful technique, a standard UV photo-lithography process, for fabrication of SiC nanowires instead of using EBL process.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005
PublisherTrans Tech Publications Ltd
Pages771-774
Number of pages4
EditionPART 1
ISBN (Print)9780878494255
DOIs
Publication statusPublished - 2006
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: 2005 Sep 182005 Sep 23

Publication series

NameMaterials Science Forum
NumberPART 1
Volume527-529
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period05/9/1805/9/23

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Seong, H. K., Lee, S. Y., Choi, H. J., Kim, T. H., Cho, N. K., Nahm, K. S., & Lee, S. K. (2006). Fabrication and electrical transport properties of CVD grown silicon carbide nanowires (SiC NWs) for field effect transistor. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005 (PART 1 ed., pp. 771-774). (Materials Science Forum; Vol. 527-529, No. PART 1). Trans Tech Publications Ltd. https://doi.org/10.4028/0-87849-425-1.771