Fabrication and electrical transport properties of CVD grown silicon carbide nanowires (SiC NWs) for field effect transistor

Han Kyu Seong, Seung Yong Lee, Heon-Jin Choi, Tae Hong Kim, Nam Kyu Cho, Kee Suk Nahm, Sang Kwon Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Abstract

We demonstrate the fabrication and the electrical transport properties of single crystalline 3C silicon carbide nanowires (SiC NWs). The growth of SiC NWs was carried out in a chemical vapor deposition (CVD) furnace. Methyltrichlorosilane (MTS, CH3SiCl3) was chosen as a source precursor. SiC NWs had diameters of less than 100 nm and lengths of several μm. For electrical transport measurements, as-gown SiC NWs were prepared on a highly doped silicon wafer, pre-patterned by a photo-lithography process, with a 400 nm thick SiO2 layer. Source and drain electrodes were defined by e-beam lithography (EBL). Prior to the metal deposition (Ti/Au : 40 nm/70 nm) by thermal evaporation, the native oxide on SiC NWs was removed by buffered HF. The estimated mobility of carriers is 15 cm2/(Vs) for a source-drain voltage (VSD) of 0.02 V. It is very low compared to that expected in bulk and/or thin film 3C-SiC The electrical measurements from nanowire-based field effect transistor (FET) structures illustrate that SiC NWs are weak n-type semiconductor. We have also demonstrated a powerful technique, a standard UV photo-lithography process, for fabrication of SiC nanowires instead of using EBL process.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005
Pages771-774
Number of pages4
EditionPART 1
Publication statusPublished - 2006 Dec 1
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: 2005 Sep 182005 Sep 23

Publication series

NameMaterials Science Forum
NumberPART 1
Volume527-529
ISSN (Print)0255-5476

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period05/9/1805/9/23

Fingerprint

Field effect transistors
Silicon carbide
silicon carbides
Transport properties
Nanowires
Chemical vapor deposition
nanowires
field effect transistors
transport properties
vapor deposition
Fabrication
fabrication
Lithography
lithography
n-type semiconductors
Thermal evaporation
silicon carbide
Silicon wafers
Oxides
electrical measurement

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Seong, H. K., Lee, S. Y., Choi, H-J., Kim, T. H., Cho, N. K., Nahm, K. S., & Lee, S. K. (2006). Fabrication and electrical transport properties of CVD grown silicon carbide nanowires (SiC NWs) for field effect transistor. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005 (PART 1 ed., pp. 771-774). (Materials Science Forum; Vol. 527-529, No. PART 1).
Seong, Han Kyu ; Lee, Seung Yong ; Choi, Heon-Jin ; Kim, Tae Hong ; Cho, Nam Kyu ; Nahm, Kee Suk ; Lee, Sang Kwon. / Fabrication and electrical transport properties of CVD grown silicon carbide nanowires (SiC NWs) for field effect transistor. Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1. ed. 2006. pp. 771-774 (Materials Science Forum; PART 1).
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abstract = "We demonstrate the fabrication and the electrical transport properties of single crystalline 3C silicon carbide nanowires (SiC NWs). The growth of SiC NWs was carried out in a chemical vapor deposition (CVD) furnace. Methyltrichlorosilane (MTS, CH3SiCl3) was chosen as a source precursor. SiC NWs had diameters of less than 100 nm and lengths of several μm. For electrical transport measurements, as-gown SiC NWs were prepared on a highly doped silicon wafer, pre-patterned by a photo-lithography process, with a 400 nm thick SiO2 layer. Source and drain electrodes were defined by e-beam lithography (EBL). Prior to the metal deposition (Ti/Au : 40 nm/70 nm) by thermal evaporation, the native oxide on SiC NWs was removed by buffered HF. The estimated mobility of carriers is 15 cm2/(Vs) for a source-drain voltage (VSD) of 0.02 V. It is very low compared to that expected in bulk and/or thin film 3C-SiC The electrical measurements from nanowire-based field effect transistor (FET) structures illustrate that SiC NWs are weak n-type semiconductor. We have also demonstrated a powerful technique, a standard UV photo-lithography process, for fabrication of SiC nanowires instead of using EBL process.",
author = "Seong, {Han Kyu} and Lee, {Seung Yong} and Heon-Jin Choi and Kim, {Tae Hong} and Cho, {Nam Kyu} and Nahm, {Kee Suk} and Lee, {Sang Kwon}",
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Seong, HK, Lee, SY, Choi, H-J, Kim, TH, Cho, NK, Nahm, KS & Lee, SK 2006, Fabrication and electrical transport properties of CVD grown silicon carbide nanowires (SiC NWs) for field effect transistor. in Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 edn, Materials Science Forum, no. PART 1, vol. 527-529, pp. 771-774, International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005), Pittsburgh, PA, United States, 05/9/18.

Fabrication and electrical transport properties of CVD grown silicon carbide nanowires (SiC NWs) for field effect transistor. / Seong, Han Kyu; Lee, Seung Yong; Choi, Heon-Jin; Kim, Tae Hong; Cho, Nam Kyu; Nahm, Kee Suk; Lee, Sang Kwon.

Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1. ed. 2006. p. 771-774 (Materials Science Forum; Vol. 527-529, No. PART 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Fabrication and electrical transport properties of CVD grown silicon carbide nanowires (SiC NWs) for field effect transistor

AU - Seong, Han Kyu

AU - Lee, Seung Yong

AU - Choi, Heon-Jin

AU - Kim, Tae Hong

AU - Cho, Nam Kyu

AU - Nahm, Kee Suk

AU - Lee, Sang Kwon

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N2 - We demonstrate the fabrication and the electrical transport properties of single crystalline 3C silicon carbide nanowires (SiC NWs). The growth of SiC NWs was carried out in a chemical vapor deposition (CVD) furnace. Methyltrichlorosilane (MTS, CH3SiCl3) was chosen as a source precursor. SiC NWs had diameters of less than 100 nm and lengths of several μm. For electrical transport measurements, as-gown SiC NWs were prepared on a highly doped silicon wafer, pre-patterned by a photo-lithography process, with a 400 nm thick SiO2 layer. Source and drain electrodes were defined by e-beam lithography (EBL). Prior to the metal deposition (Ti/Au : 40 nm/70 nm) by thermal evaporation, the native oxide on SiC NWs was removed by buffered HF. The estimated mobility of carriers is 15 cm2/(Vs) for a source-drain voltage (VSD) of 0.02 V. It is very low compared to that expected in bulk and/or thin film 3C-SiC The electrical measurements from nanowire-based field effect transistor (FET) structures illustrate that SiC NWs are weak n-type semiconductor. We have also demonstrated a powerful technique, a standard UV photo-lithography process, for fabrication of SiC nanowires instead of using EBL process.

AB - We demonstrate the fabrication and the electrical transport properties of single crystalline 3C silicon carbide nanowires (SiC NWs). The growth of SiC NWs was carried out in a chemical vapor deposition (CVD) furnace. Methyltrichlorosilane (MTS, CH3SiCl3) was chosen as a source precursor. SiC NWs had diameters of less than 100 nm and lengths of several μm. For electrical transport measurements, as-gown SiC NWs were prepared on a highly doped silicon wafer, pre-patterned by a photo-lithography process, with a 400 nm thick SiO2 layer. Source and drain electrodes were defined by e-beam lithography (EBL). Prior to the metal deposition (Ti/Au : 40 nm/70 nm) by thermal evaporation, the native oxide on SiC NWs was removed by buffered HF. The estimated mobility of carriers is 15 cm2/(Vs) for a source-drain voltage (VSD) of 0.02 V. It is very low compared to that expected in bulk and/or thin film 3C-SiC The electrical measurements from nanowire-based field effect transistor (FET) structures illustrate that SiC NWs are weak n-type semiconductor. We have also demonstrated a powerful technique, a standard UV photo-lithography process, for fabrication of SiC nanowires instead of using EBL process.

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M3 - Conference contribution

AN - SCOPUS:35748972135

SN - 9780878494255

T3 - Materials Science Forum

SP - 771

EP - 774

BT - Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005

ER -

Seong HK, Lee SY, Choi H-J, Kim TH, Cho NK, Nahm KS et al. Fabrication and electrical transport properties of CVD grown silicon carbide nanowires (SiC NWs) for field effect transistor. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 ed. 2006. p. 771-774. (Materials Science Forum; PART 1).