Fabrication and electrical transport properties of CVD grown silicon carbide nanowires (SiC NWs) for field effect transistor

Engineering

• Nanowire 100%
• Silicon Carbide 77%
• Fabrication 33%
• Field-Effect Transistor 22%
• Chemical Vapour Deposition 22%
• Beam Lithography 22%
• Thin Films 11%
• Drain Electrode 11%
• Measurement 11%
• Silicon Wafer 11%
• Electrical Measurement 11%
• Semiconductor Type 11%
• Sio2 Layer 11%
• Drain Voltage 11%

Physics

• Silicon Carbide 77%
• Lithography 22%
• Transport Properties 22%
• Field Effect Transistors 22%
• Vapor Deposition 22%
• Thin Films 11%
• Oxide 11%
• Thermal Evaporation 11%

Material Science

• Thin Films 11%
• Silicon Wafer 11%
• Metal Deposition 11%