Fabrication and modeling of gigahertz photodetectors in heteroepitaxial Ge-on-Si using a graded buffer layer deposited by low energy plasma enhanced CVD

R. E. Jones; S. G. Thomas; S. Bharatan; R. Thoma; C. Jasper; T. Zirkle; N. V. Edwards; R. Liu; X. D. Wang; Q. Xie; C. Rosenblad; J. Ramm; G. Isella; H. Von Känel; J. Oh; J. C. Campbell

Fabrication and modeling of gigahertz photodetectors in heteroepitaxial Ge-on-Si using a graded buffer layer deposited by low energy plasma enhanced CVD

R. E. Jones, S. G. Thomas, S. Bharatan, R. Thoma, C. Jasper, T. Zirkle, N. V. Edwards, R. Liu, X. D. Wang, Q. Xie, C. Rosenblad, J. Ramm, G. Isella, H. Von Känel, J. Oh, J. C. Campbell

School of Integrated Technology

Research output: Contribution to journal › Conference article › peer-review

20 Citations (Scopus)

Abstract

Photodetectors were fabricated in a heteroepitaxial Ge-on-Si deposited by low energy plasma enhanced CVD. Dark current density of 4.6 nA/μm², 49% quantum efficiency, and a -3 dB bandwidth of 3.5 GHz were measured at 1.3 μm wavelength and -3 V bias. Numerical simulations predict device modifications can achieve 10 Gbps (≅ 7 GHz) bandwidth.

Original language	English
Pages (from-to)	793-796
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 2002
Event	2002 IEEE International Devices Meeting (IEDM) - San Francisco, CA, United States Duration: 2002 Dec 8 → 2002 Dec 11

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

Jones, R. E., Thomas, S. G., Bharatan, S., Thoma, R., Jasper, C., Zirkle, T., Edwards, N. V., Liu, R., Wang, X. D., Xie, Q., Rosenblad, C., Ramm, J., Isella, G., Von Känel, H., Oh, J., & Campbell, J. C. (2002). Fabrication and modeling of gigahertz photodetectors in heteroepitaxial Ge-on-Si using a graded buffer layer deposited by low energy plasma enhanced CVD. Technical Digest - International Electron Devices Meeting, 793-796.

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title = "Fabrication and modeling of gigahertz photodetectors in heteroepitaxial Ge-on-Si using a graded buffer layer deposited by low energy plasma enhanced CVD",

abstract = "Photodetectors were fabricated in a heteroepitaxial Ge-on-Si deposited by low energy plasma enhanced CVD. Dark current density of 4.6 nA/μm2, 49% quantum efficiency, and a -3 dB bandwidth of 3.5 GHz were measured at 1.3 μm wavelength and -3 V bias. Numerical simulations predict device modifications can achieve 10 Gbps (≅ 7 GHz) bandwidth.",

author = "Jones, {R. E.} and Thomas, {S. G.} and S. Bharatan and R. Thoma and C. Jasper and T. Zirkle and Edwards, {N. V.} and R. Liu and Wang, {X. D.} and Q. Xie and C. Rosenblad and J. Ramm and G. Isella and {Von K{\"a}nel}, H. and J. Oh and Campbell, {J. C.}",

year = "2002",

language = "English",

pages = "793--796",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2002 IEEE International Devices Meeting (IEDM) ; Conference date: 08-12-2002 Through 11-12-2002",

}

Jones, RE, Thomas, SG, Bharatan, S, Thoma, R, Jasper, C, Zirkle, T, Edwards, NV, Liu, R, Wang, XD, Xie, Q, Rosenblad, C, Ramm, J, Isella, G, Von Känel, H, Oh, J & Campbell, JC 2002, 'Fabrication and modeling of gigahertz photodetectors in heteroepitaxial Ge-on-Si using a graded buffer layer deposited by low energy plasma enhanced CVD', Technical Digest - International Electron Devices Meeting, pp. 793-796.

TY - JOUR

T1 - Fabrication and modeling of gigahertz photodetectors in heteroepitaxial Ge-on-Si using a graded buffer layer deposited by low energy plasma enhanced CVD

AU - Jones, R. E.

AU - Thomas, S. G.

AU - Bharatan, S.

AU - Thoma, R.

AU - Jasper, C.

AU - Zirkle, T.

AU - Edwards, N. V.

AU - Liu, R.

AU - Wang, X. D.

AU - Xie, Q.

AU - Rosenblad, C.

AU - Ramm, J.

AU - Isella, G.

AU - Von Känel, H.

AU - Oh, J.

AU - Campbell, J. C.

PY - 2002

Y1 - 2002

N2 - Photodetectors were fabricated in a heteroepitaxial Ge-on-Si deposited by low energy plasma enhanced CVD. Dark current density of 4.6 nA/μm2, 49% quantum efficiency, and a -3 dB bandwidth of 3.5 GHz were measured at 1.3 μm wavelength and -3 V bias. Numerical simulations predict device modifications can achieve 10 Gbps (≅ 7 GHz) bandwidth.

AB - Photodetectors were fabricated in a heteroepitaxial Ge-on-Si deposited by low energy plasma enhanced CVD. Dark current density of 4.6 nA/μm2, 49% quantum efficiency, and a -3 dB bandwidth of 3.5 GHz were measured at 1.3 μm wavelength and -3 V bias. Numerical simulations predict device modifications can achieve 10 Gbps (≅ 7 GHz) bandwidth.

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UR - http://www.scopus.com/inward/citedby.url?scp=0036923797&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036923797

SN - 0163-1918

SP - 793

EP - 796

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 2002 IEEE International Devices Meeting (IEDM)

Y2 - 8 December 2002 through 11 December 2002

ER -

Fabrication and modeling of gigahertz photodetectors in heteroepitaxial Ge-on-Si using a graded buffer layer deposited by low energy plasma enhanced CVD

Abstract

All Science Journal Classification (ASJC) codes

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