Fabrication and modeling of gigahertz photodetectors in heteroepitaxial Ge-on-Si using a graded buffer layer deposited by low energy plasma enhanced CVD

R. E. Jones, S. G. Thomas, S. Bharatan, R. Thoma, C. Jasper, T. Zirkle, N. V. Edwards, R. Liu, X. D. Wang, Q. Xie, C. Rosenblad, J. Ramm, G. Isella, H. Von Känel, J. Oh, J. C. Campbell

Research output: Contribution to journalConference article

18 Citations (Scopus)

Abstract

Photodetectors were fabricated in a heteroepitaxial Ge-on-Si deposited by low energy plasma enhanced CVD. Dark current density of 4.6 nA/μm2, 49% quantum efficiency, and a -3 dB bandwidth of 3.5 GHz were measured at 1.3 μm wavelength and -3 V bias. Numerical simulations predict device modifications can achieve 10 Gbps (≅ 7 GHz) bandwidth.

Original languageEnglish
Pages (from-to)793-796
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2002
Event2002 IEEE International Devices Meeting (IEDM) - San Francisco, CA, United States
Duration: 2002 Dec 82002 Dec 11

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Jones, R. E., Thomas, S. G., Bharatan, S., Thoma, R., Jasper, C., Zirkle, T., Edwards, N. V., Liu, R., Wang, X. D., Xie, Q., Rosenblad, C., Ramm, J., Isella, G., Von Känel, H., Oh, J., & Campbell, J. C. (2002). Fabrication and modeling of gigahertz photodetectors in heteroepitaxial Ge-on-Si using a graded buffer layer deposited by low energy plasma enhanced CVD. Technical Digest - International Electron Devices Meeting, 793-796.