Abstract
DNA molecules doped with lanthanide and metal ions possess distinct functionalities, providing a feasibility to be utilised in various applications in nano- and biotechnologies. In the present work, we fabricate DNA thin films doped with seven different lanthanide ions (Ce3+, Dy3+, Eu3+, Gd3+, Tb3+, Tm3+, and Sm3+) and four different metal ions (Cu2+, Ni2+, Zn2+, and Co2+) by the drop-casting method. In addition, we conduct current, Hall transport, optical transmittance, and Raman spectroscopic measurements to investigate their electrical properties, carrier concentrations and Hall mobilities, optical band gaps, and vibrational and stretching modes, respectively. By analysing the current-voltage characteristics of the doped thin films with varying dopant concentrations, characteristic critical concentrations are observed, which are related to the significant enhancement of the thin film's physical properties, compared with the pristine DNA. The extrema of the carrier concentrations and Hall mobilities of the doped thin films were observed approximately at the same critical concentrations. The optical band gaps gradually decreased with an increasing dopant concentration, caused by the intrinsic characteristics of both the dopants and DNA. Because of the preference of ions binding to DNA backbones through an electrostatic attraction and to bases via intercalation, the Raman band intensities gradually increase (or decrease) until reaching [Ln]C (or [M]C), where their trend is reversed. Ln-DNA and M-DNA thin films provide significant, specific, and novel physical characteristics which can be used in various applications.
| Original language | English |
|---|---|
| Article number | 285301 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 51 |
| Issue number | 28 |
| DOIs | |
| Publication status | Published - 2018 Jun 22 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films
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Fabrication and optoelectronic characterisation of lanthanide- and metal-ion-doped DNA thin films. / Dugasani, Sreekantha Reddy; Paulson, Bjorn; Ha, Taewoo; Jung, Tae Soo; Gnapareddy, Bramaramba; Kim, Jang Ah; Kim, Taesung; Kim, Hyun Jae; Kim, Jae Hoon; Oh, Kyunghwan; Park, Sung Ha.
In: Journal of Physics D: Applied Physics, Vol. 51, No. 28, 285301, 22.06.2018.Research output: Contribution to journal › Article
TY - JOUR
T1 - Fabrication and optoelectronic characterisation of lanthanide- and metal-ion-doped DNA thin films
AU - Dugasani, Sreekantha Reddy
AU - Paulson, Bjorn
AU - Ha, Taewoo
AU - Jung, Tae Soo
AU - Gnapareddy, Bramaramba
AU - Kim, Jang Ah
AU - Kim, Taesung
AU - Kim, Hyun Jae
AU - Kim, Jae Hoon
AU - Oh, Kyunghwan
AU - Park, Sung Ha
PY - 2018/6/22
Y1 - 2018/6/22
N2 - DNA molecules doped with lanthanide and metal ions possess distinct functionalities, providing a feasibility to be utilised in various applications in nano- and biotechnologies. In the present work, we fabricate DNA thin films doped with seven different lanthanide ions (Ce3+, Dy3+, Eu3+, Gd3+, Tb3+, Tm3+, and Sm3+) and four different metal ions (Cu2+, Ni2+, Zn2+, and Co2+) by the drop-casting method. In addition, we conduct current, Hall transport, optical transmittance, and Raman spectroscopic measurements to investigate their electrical properties, carrier concentrations and Hall mobilities, optical band gaps, and vibrational and stretching modes, respectively. By analysing the current-voltage characteristics of the doped thin films with varying dopant concentrations, characteristic critical concentrations are observed, which are related to the significant enhancement of the thin film's physical properties, compared with the pristine DNA. The extrema of the carrier concentrations and Hall mobilities of the doped thin films were observed approximately at the same critical concentrations. The optical band gaps gradually decreased with an increasing dopant concentration, caused by the intrinsic characteristics of both the dopants and DNA. Because of the preference of ions binding to DNA backbones through an electrostatic attraction and to bases via intercalation, the Raman band intensities gradually increase (or decrease) until reaching [Ln]C (or [M]C), where their trend is reversed. Ln-DNA and M-DNA thin films provide significant, specific, and novel physical characteristics which can be used in various applications.
AB - DNA molecules doped with lanthanide and metal ions possess distinct functionalities, providing a feasibility to be utilised in various applications in nano- and biotechnologies. In the present work, we fabricate DNA thin films doped with seven different lanthanide ions (Ce3+, Dy3+, Eu3+, Gd3+, Tb3+, Tm3+, and Sm3+) and four different metal ions (Cu2+, Ni2+, Zn2+, and Co2+) by the drop-casting method. In addition, we conduct current, Hall transport, optical transmittance, and Raman spectroscopic measurements to investigate their electrical properties, carrier concentrations and Hall mobilities, optical band gaps, and vibrational and stretching modes, respectively. By analysing the current-voltage characteristics of the doped thin films with varying dopant concentrations, characteristic critical concentrations are observed, which are related to the significant enhancement of the thin film's physical properties, compared with the pristine DNA. The extrema of the carrier concentrations and Hall mobilities of the doped thin films were observed approximately at the same critical concentrations. The optical band gaps gradually decreased with an increasing dopant concentration, caused by the intrinsic characteristics of both the dopants and DNA. Because of the preference of ions binding to DNA backbones through an electrostatic attraction and to bases via intercalation, the Raman band intensities gradually increase (or decrease) until reaching [Ln]C (or [M]C), where their trend is reversed. Ln-DNA and M-DNA thin films provide significant, specific, and novel physical characteristics which can be used in various applications.
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U2 - 10.1088/1361-6463/aaca63
DO - 10.1088/1361-6463/aaca63
M3 - Article
AN - SCOPUS:85049316955
VL - 51
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
SN - 0022-3727
IS - 28
M1 - 285301
ER -