Fabrication and optoelectronic characterisation of lanthanide- and metal-ion-doped DNA thin films

Sreekantha Reddy Dugasani, Bjorn Paulson, Taewoo Ha, Tae Soo Jung, Bramaramba Gnapareddy, Jang Ah Kim, Taesung Kim, Hyun Jae Kim, Jae Hoon Kim, Kyunghwan Oh, Sung Ha Park

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

DNA molecules doped with lanthanide and metal ions possess distinct functionalities, providing a feasibility to be utilised in various applications in nano- and biotechnologies. In the present work, we fabricate DNA thin films doped with seven different lanthanide ions (Ce3+, Dy3+, Eu3+, Gd3+, Tb3+, Tm3+, and Sm3+) and four different metal ions (Cu2+, Ni2+, Zn2+, and Co2+) by the drop-casting method. In addition, we conduct current, Hall transport, optical transmittance, and Raman spectroscopic measurements to investigate their electrical properties, carrier concentrations and Hall mobilities, optical band gaps, and vibrational and stretching modes, respectively. By analysing the current-voltage characteristics of the doped thin films with varying dopant concentrations, characteristic critical concentrations are observed, which are related to the significant enhancement of the thin film's physical properties, compared with the pristine DNA. The extrema of the carrier concentrations and Hall mobilities of the doped thin films were observed approximately at the same critical concentrations. The optical band gaps gradually decreased with an increasing dopant concentration, caused by the intrinsic characteristics of both the dopants and DNA. Because of the preference of ions binding to DNA backbones through an electrostatic attraction and to bases via intercalation, the Raman band intensities gradually increase (or decrease) until reaching [Ln]C (or [M]C), where their trend is reversed. Ln-DNA and M-DNA thin films provide significant, specific, and novel physical characteristics which can be used in various applications.

Original languageEnglish
Article number285301
JournalJournal of Physics D: Applied Physics
Volume51
Issue number28
DOIs
Publication statusPublished - 2018 Jun 22

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) funded by the Korea government (2016R1D1A1B03933768, 2017R1A2B4010955, and 2018R1A2B6008094).

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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