Fabrication and optoelectronic characterisation of lanthanide- and metal-ion-doped DNA thin films

Sreekantha Reddy Dugasani, Bjorn Paulson, Taewoo Ha, Tae Soo Jung, Bramaramba Gnapareddy, Jang Ah Kim, Taesung Kim, Hyun Jae Kim, Jae Hoon Kim, Kyunghwan Oh, Sung Ha Park

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

DNA molecules doped with lanthanide and metal ions possess distinct functionalities, providing a feasibility to be utilised in various applications in nano- and biotechnologies. In the present work, we fabricate DNA thin films doped with seven different lanthanide ions (Ce3+, Dy3+, Eu3+, Gd3+, Tb3+, Tm3+, and Sm3+) and four different metal ions (Cu2+, Ni2+, Zn2+, and Co2+) by the drop-casting method. In addition, we conduct current, Hall transport, optical transmittance, and Raman spectroscopic measurements to investigate their electrical properties, carrier concentrations and Hall mobilities, optical band gaps, and vibrational and stretching modes, respectively. By analysing the current-voltage characteristics of the doped thin films with varying dopant concentrations, characteristic critical concentrations are observed, which are related to the significant enhancement of the thin film's physical properties, compared with the pristine DNA. The extrema of the carrier concentrations and Hall mobilities of the doped thin films were observed approximately at the same critical concentrations. The optical band gaps gradually decreased with an increasing dopant concentration, caused by the intrinsic characteristics of both the dopants and DNA. Because of the preference of ions binding to DNA backbones through an electrostatic attraction and to bases via intercalation, the Raman band intensities gradually increase (or decrease) until reaching [Ln]C (or [M]C), where their trend is reversed. Ln-DNA and M-DNA thin films provide significant, specific, and novel physical characteristics which can be used in various applications.

Original languageEnglish
Article number285301
JournalJournal of Physics D: Applied Physics
Volume51
Issue number28
DOIs
Publication statusPublished - 2018 Jun 22

Fingerprint

Lanthanoid Series Elements
Rare earth elements
Optoelectronic devices
Metal ions
metal ions
DNA
deoxyribonucleic acid
Fabrication
Thin films
fabrication
thin films
Hall mobility
Optical band gaps
Doping (additives)
Carrier concentration
Ions
Hall currents
ions
biotechnology
Opacity

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Dugasani, S. R., Paulson, B., Ha, T., Jung, T. S., Gnapareddy, B., Kim, J. A., ... Park, S. H. (2018). Fabrication and optoelectronic characterisation of lanthanide- and metal-ion-doped DNA thin films. Journal of Physics D: Applied Physics, 51(28), [285301]. https://doi.org/10.1088/1361-6463/aaca63
Dugasani, Sreekantha Reddy ; Paulson, Bjorn ; Ha, Taewoo ; Jung, Tae Soo ; Gnapareddy, Bramaramba ; Kim, Jang Ah ; Kim, Taesung ; Kim, Hyun Jae ; Kim, Jae Hoon ; Oh, Kyunghwan ; Park, Sung Ha. / Fabrication and optoelectronic characterisation of lanthanide- and metal-ion-doped DNA thin films. In: Journal of Physics D: Applied Physics. 2018 ; Vol. 51, No. 28.
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Fabrication and optoelectronic characterisation of lanthanide- and metal-ion-doped DNA thin films. / Dugasani, Sreekantha Reddy; Paulson, Bjorn; Ha, Taewoo; Jung, Tae Soo; Gnapareddy, Bramaramba; Kim, Jang Ah; Kim, Taesung; Kim, Hyun Jae; Kim, Jae Hoon; Oh, Kyunghwan; Park, Sung Ha.

In: Journal of Physics D: Applied Physics, Vol. 51, No. 28, 285301, 22.06.2018.

Research output: Contribution to journalArticle

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AU - Dugasani, Sreekantha Reddy

AU - Paulson, Bjorn

AU - Ha, Taewoo

AU - Jung, Tae Soo

AU - Gnapareddy, Bramaramba

AU - Kim, Jang Ah

AU - Kim, Taesung

AU - Kim, Hyun Jae

AU - Kim, Jae Hoon

AU - Oh, Kyunghwan

AU - Park, Sung Ha

PY - 2018/6/22

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N2 - DNA molecules doped with lanthanide and metal ions possess distinct functionalities, providing a feasibility to be utilised in various applications in nano- and biotechnologies. In the present work, we fabricate DNA thin films doped with seven different lanthanide ions (Ce3+, Dy3+, Eu3+, Gd3+, Tb3+, Tm3+, and Sm3+) and four different metal ions (Cu2+, Ni2+, Zn2+, and Co2+) by the drop-casting method. In addition, we conduct current, Hall transport, optical transmittance, and Raman spectroscopic measurements to investigate their electrical properties, carrier concentrations and Hall mobilities, optical band gaps, and vibrational and stretching modes, respectively. By analysing the current-voltage characteristics of the doped thin films with varying dopant concentrations, characteristic critical concentrations are observed, which are related to the significant enhancement of the thin film's physical properties, compared with the pristine DNA. The extrema of the carrier concentrations and Hall mobilities of the doped thin films were observed approximately at the same critical concentrations. The optical band gaps gradually decreased with an increasing dopant concentration, caused by the intrinsic characteristics of both the dopants and DNA. Because of the preference of ions binding to DNA backbones through an electrostatic attraction and to bases via intercalation, the Raman band intensities gradually increase (or decrease) until reaching [Ln]C (or [M]C), where their trend is reversed. Ln-DNA and M-DNA thin films provide significant, specific, and novel physical characteristics which can be used in various applications.

AB - DNA molecules doped with lanthanide and metal ions possess distinct functionalities, providing a feasibility to be utilised in various applications in nano- and biotechnologies. In the present work, we fabricate DNA thin films doped with seven different lanthanide ions (Ce3+, Dy3+, Eu3+, Gd3+, Tb3+, Tm3+, and Sm3+) and four different metal ions (Cu2+, Ni2+, Zn2+, and Co2+) by the drop-casting method. In addition, we conduct current, Hall transport, optical transmittance, and Raman spectroscopic measurements to investigate their electrical properties, carrier concentrations and Hall mobilities, optical band gaps, and vibrational and stretching modes, respectively. By analysing the current-voltage characteristics of the doped thin films with varying dopant concentrations, characteristic critical concentrations are observed, which are related to the significant enhancement of the thin film's physical properties, compared with the pristine DNA. The extrema of the carrier concentrations and Hall mobilities of the doped thin films were observed approximately at the same critical concentrations. The optical band gaps gradually decreased with an increasing dopant concentration, caused by the intrinsic characteristics of both the dopants and DNA. Because of the preference of ions binding to DNA backbones through an electrostatic attraction and to bases via intercalation, the Raman band intensities gradually increase (or decrease) until reaching [Ln]C (or [M]C), where their trend is reversed. Ln-DNA and M-DNA thin films provide significant, specific, and novel physical characteristics which can be used in various applications.

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