Fabrication and performance characteristics of a CsI(Tl)/PIN diode radiation sensor for industrial applications

Han Soo Kim; Jang Ho Ha; Se Hwan Park; Seung Yeon Cho; Yong Kyun Kim

doi:10.1016/j.apradiso.2009.02.042

Fabrication and performance characteristics of a CsI(Tl)/PIN diode radiation sensor for industrial applications

Han Soo Kim, Jang Ho Ha, Se Hwan Park, Seung Yeon Cho, Yong Kyun Kim

Division of Environmental Engineering

Research output: Contribution to journal › Article

13 Citations (Scopus)

Abstract

CsI(Tl)/PIN diode radiation sensors were fabricated for application in various fields such as an NDT and an environmental radiation monitoring system. CsI(Tl) crystals of 11×11×21 mm³ were processed as optical grade from a CsI(Tl) ingot and matched with PIN diodes in consideration of the light loss and the external impact. The photodiode signal is amplified by a low-noise preamplifier and a pulse shape amplifier. At room temperature, the fabricated CsI(Tl)/PIN diode radiation sensors demonstrate an energy resolution of 7.9% for 660 keV gamma rays and 4.9% for 1330 keV. The fluctuation of the directional dependency was below 14% from 0 to 90 degree for the incident 660 keV gamma rays. The compactness, the low-voltage power supply and the physical hardness are very useful features for industrial applications of the fabricated CsI(Tl)/PIN diode sensor.

Original language	English
Pages (from-to)	1463-1465
Number of pages	3
Journal	Applied Radiation and Isotopes
Volume	67
Issue number	7-8
DOIs	https://doi.org/10.1016/j.apradiso.2009.02.042
Publication status	Published - 2009 Jul 1

All Science Journal Classification (ASJC) codes

Radiation

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Kim, H. S., Ha, J. H., Park, S. H., Cho, S. Y., & Kim, Y. K. (2009). Fabrication and performance characteristics of a CsI(Tl)/PIN diode radiation sensor for industrial applications. Applied Radiation and Isotopes, 67(7-8), 1463-1465. https://doi.org/10.1016/j.apradiso.2009.02.042

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abstract = "CsI(Tl)/PIN diode radiation sensors were fabricated for application in various fields such as an NDT and an environmental radiation monitoring system. CsI(Tl) crystals of 11×11×21 mm3 were processed as optical grade from a CsI(Tl) ingot and matched with PIN diodes in consideration of the light loss and the external impact. The photodiode signal is amplified by a low-noise preamplifier and a pulse shape amplifier. At room temperature, the fabricated CsI(Tl)/PIN diode radiation sensors demonstrate an energy resolution of 7.9% for 660 keV gamma rays and 4.9% for 1330 keV. The fluctuation of the directional dependency was below 14% from 0 to 90 degree for the incident 660 keV gamma rays. The compactness, the low-voltage power supply and the physical hardness are very useful features for industrial applications of the fabricated CsI(Tl)/PIN diode sensor.",

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AU - Kim, Yong Kyun

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