Abstract
CsI(Tl)/PIN diode radiation sensors were fabricated for application in various fields such as an NDT and an environmental radiation monitoring system. CsI(Tl) crystals of 11×11×21 mm3 were processed as optical grade from a CsI(Tl) ingot and matched with PIN diodes in consideration of the light loss and the external impact. The photodiode signal is amplified by a low-noise preamplifier and a pulse shape amplifier. At room temperature, the fabricated CsI(Tl)/PIN diode radiation sensors demonstrate an energy resolution of 7.9% for 660 keV gamma rays and 4.9% for 1330 keV. The fluctuation of the directional dependency was below 14% from 0 to 90 degree for the incident 660 keV gamma rays. The compactness, the low-voltage power supply and the physical hardness are very useful features for industrial applications of the fabricated CsI(Tl)/PIN diode sensor.
| Original language | English |
|---|---|
| Pages (from-to) | 1463-1465 |
| Number of pages | 3 |
| Journal | Applied Radiation and Isotopes |
| Volume | 67 |
| Issue number | 7-8 |
| DOIs | |
| Publication status | Published - 2009 Jul |
Bibliographical note
Funding Information:This work has been carried out under the nuclear R&D program of the Ministry of Science and Technology (MOST) and under the Eco-technopia 21 Project of the Ministry of Environment (ME) of Korea. We are also supported by the iTRS Science Research Center/Engineering Research Center program of MOST/Korea Science and Engineering Foundation (grant # R11-2000-067-02001-0) and was partially supported by the BK21 program of the Korea Research Foundation (KRF).
All Science Journal Classification (ASJC) codes
- Radiation