Abstract
CsI(Tl)/PIN diode radiation sensors were fabricated for application in various fields such as an NDT and an environmental radiation monitoring system. CsI(Tl) crystals of 11×11×21 mm3 were processed as optical grade from a CsI(Tl) ingot and matched with PIN diodes in consideration of the light loss and the external impact. The photodiode signal is amplified by a low-noise preamplifier and a pulse shape amplifier. At room temperature, the fabricated CsI(Tl)/PIN diode radiation sensors demonstrate an energy resolution of 7.9% for 660 keV gamma rays and 4.9% for 1330 keV. The fluctuation of the directional dependency was below 14% from 0 to 90 degree for the incident 660 keV gamma rays. The compactness, the low-voltage power supply and the physical hardness are very useful features for industrial applications of the fabricated CsI(Tl)/PIN diode sensor.
| Original language | English |
|---|---|
| Pages (from-to) | 1463-1465 |
| Number of pages | 3 |
| Journal | Applied Radiation and Isotopes |
| Volume | 67 |
| Issue number | 7-8 |
| DOIs | |
| Publication status | Published - 2009 Jul 1 |
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All Science Journal Classification (ASJC) codes
- Radiation
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Fabrication and performance characteristics of a CsI(Tl)/PIN diode radiation sensor for industrial applications. / Kim, Han Soo; Ha, Jang Ho; Park, Se Hwan; Cho, Seungyeon; Kim, Yong Kyun.
In: Applied Radiation and Isotopes, Vol. 67, No. 7-8, 01.07.2009, p. 1463-1465.Research output: Contribution to journal › Article
TY - JOUR
T1 - Fabrication and performance characteristics of a CsI(Tl)/PIN diode radiation sensor for industrial applications
AU - Kim, Han Soo
AU - Ha, Jang Ho
AU - Park, Se Hwan
AU - Cho, Seungyeon
AU - Kim, Yong Kyun
PY - 2009/7/1
Y1 - 2009/7/1
N2 - CsI(Tl)/PIN diode radiation sensors were fabricated for application in various fields such as an NDT and an environmental radiation monitoring system. CsI(Tl) crystals of 11×11×21 mm3 were processed as optical grade from a CsI(Tl) ingot and matched with PIN diodes in consideration of the light loss and the external impact. The photodiode signal is amplified by a low-noise preamplifier and a pulse shape amplifier. At room temperature, the fabricated CsI(Tl)/PIN diode radiation sensors demonstrate an energy resolution of 7.9% for 660 keV gamma rays and 4.9% for 1330 keV. The fluctuation of the directional dependency was below 14% from 0 to 90 degree for the incident 660 keV gamma rays. The compactness, the low-voltage power supply and the physical hardness are very useful features for industrial applications of the fabricated CsI(Tl)/PIN diode sensor.
AB - CsI(Tl)/PIN diode radiation sensors were fabricated for application in various fields such as an NDT and an environmental radiation monitoring system. CsI(Tl) crystals of 11×11×21 mm3 were processed as optical grade from a CsI(Tl) ingot and matched with PIN diodes in consideration of the light loss and the external impact. The photodiode signal is amplified by a low-noise preamplifier and a pulse shape amplifier. At room temperature, the fabricated CsI(Tl)/PIN diode radiation sensors demonstrate an energy resolution of 7.9% for 660 keV gamma rays and 4.9% for 1330 keV. The fluctuation of the directional dependency was below 14% from 0 to 90 degree for the incident 660 keV gamma rays. The compactness, the low-voltage power supply and the physical hardness are very useful features for industrial applications of the fabricated CsI(Tl)/PIN diode sensor.
UR - http://www.scopus.com/inward/record.url?scp=67349237999&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=67349237999&partnerID=8YFLogxK
U2 - 10.1016/j.apradiso.2009.02.042
DO - 10.1016/j.apradiso.2009.02.042
M3 - Article
C2 - 19299152
AN - SCOPUS:67349237999
VL - 67
SP - 1463
EP - 1465
JO - Applied Radiation and Isotopes
JF - Applied Radiation and Isotopes
SN - 0969-8043
IS - 7-8
ER -