Fabrication of 4H-SiC schottky barrier diodes with high breakdown voltages

Byung Hoon Kum, Soo Chang Kang, Moo Whan Shin, Jong Dae Park

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

This paper discusses the fabrication and the breakdown characteristics of 4H-SiC Schottky barrier diodes (SBDs). Optimal processing conditions for the ohmic contacts were extracted using the transmission-line method (TLM) and were applied to the device fabrication. The Ti/4H-SiC SBDs with Si xN y passivation showed a maximum reverse breakdown voltage of 268 V with a forward current density as high as 70 mA/cm 2 at a forward voltage of 2 V. The breakdown of the Pt/4H-SiC SBDs without any passivation occurred at near 110 V. It is concluded that the breakdown enhancement in the Ti/4H-SiC SBDs can be attributed to the passivation; otherwise, excess surface charge near the edge of the Schottky contact would lead to electric fields of sufficient magnitude to cause field emission.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume35
Issue numberSUPPL. 2
Publication statusPublished - 1999 Dec 1

Fingerprint

Schottky diodes
electrical faults
passivity
fabrication
breakdown
electric contacts
transmission lines
field emission
current density
electric fields
augmentation
causes
electric potential

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kum, Byung Hoon ; Kang, Soo Chang ; Shin, Moo Whan ; Park, Jong Dae. / Fabrication of 4H-SiC schottky barrier diodes with high breakdown voltages. In: Journal of the Korean Physical Society. 1999 ; Vol. 35, No. SUPPL. 2.
@article{7a2b6894cac24a2d8d5532034dc7444d,
title = "Fabrication of 4H-SiC schottky barrier diodes with high breakdown voltages",
abstract = "This paper discusses the fabrication and the breakdown characteristics of 4H-SiC Schottky barrier diodes (SBDs). Optimal processing conditions for the ohmic contacts were extracted using the transmission-line method (TLM) and were applied to the device fabrication. The Ti/4H-SiC SBDs with Si xN y passivation showed a maximum reverse breakdown voltage of 268 V with a forward current density as high as 70 mA/cm 2 at a forward voltage of 2 V. The breakdown of the Pt/4H-SiC SBDs without any passivation occurred at near 110 V. It is concluded that the breakdown enhancement in the Ti/4H-SiC SBDs can be attributed to the passivation; otherwise, excess surface charge near the edge of the Schottky contact would lead to electric fields of sufficient magnitude to cause field emission.",
author = "Kum, {Byung Hoon} and Kang, {Soo Chang} and Shin, {Moo Whan} and Park, {Jong Dae}",
year = "1999",
month = "12",
day = "1",
language = "English",
volume = "35",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "SUPPL. 2",

}

Fabrication of 4H-SiC schottky barrier diodes with high breakdown voltages. / Kum, Byung Hoon; Kang, Soo Chang; Shin, Moo Whan; Park, Jong Dae.

In: Journal of the Korean Physical Society, Vol. 35, No. SUPPL. 2, 01.12.1999.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Fabrication of 4H-SiC schottky barrier diodes with high breakdown voltages

AU - Kum, Byung Hoon

AU - Kang, Soo Chang

AU - Shin, Moo Whan

AU - Park, Jong Dae

PY - 1999/12/1

Y1 - 1999/12/1

N2 - This paper discusses the fabrication and the breakdown characteristics of 4H-SiC Schottky barrier diodes (SBDs). Optimal processing conditions for the ohmic contacts were extracted using the transmission-line method (TLM) and were applied to the device fabrication. The Ti/4H-SiC SBDs with Si xN y passivation showed a maximum reverse breakdown voltage of 268 V with a forward current density as high as 70 mA/cm 2 at a forward voltage of 2 V. The breakdown of the Pt/4H-SiC SBDs without any passivation occurred at near 110 V. It is concluded that the breakdown enhancement in the Ti/4H-SiC SBDs can be attributed to the passivation; otherwise, excess surface charge near the edge of the Schottky contact would lead to electric fields of sufficient magnitude to cause field emission.

AB - This paper discusses the fabrication and the breakdown characteristics of 4H-SiC Schottky barrier diodes (SBDs). Optimal processing conditions for the ohmic contacts were extracted using the transmission-line method (TLM) and were applied to the device fabrication. The Ti/4H-SiC SBDs with Si xN y passivation showed a maximum reverse breakdown voltage of 268 V with a forward current density as high as 70 mA/cm 2 at a forward voltage of 2 V. The breakdown of the Pt/4H-SiC SBDs without any passivation occurred at near 110 V. It is concluded that the breakdown enhancement in the Ti/4H-SiC SBDs can be attributed to the passivation; otherwise, excess surface charge near the edge of the Schottky contact would lead to electric fields of sufficient magnitude to cause field emission.

UR - http://www.scopus.com/inward/record.url?scp=0033464269&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033464269&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0033464269

VL - 35

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - SUPPL. 2

ER -