Fabrication of amorphous-carbon-nitride field emitters

Eung Joon Chi; Jae Yeob Shim; Hong Koo Baik; Sung Man Lee

doi:10.1063/1.119562

Fabrication of amorphous-carbon-nitride field emitters

Eung Joon Chi, Jae Yeob Shim, Hong Koo Baik, Sung Man Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

56 Citations (Scopus)

Abstract

To improve silicon field emitters, an amorphous-carbon-nitride (a-CN) coating was applied by helical resonator plasma-enhanced chemical vapor deposition. By this process, a-CN was very uniformly coated on silicon tips without any damage. Microstructural and electrical investigation of the silicon and a-CN coated field emitters were performed, a-CN coating lowered turn-on voltage and increased emission current. Negative electron affinity of carbon nitride is suggested for enhancing emission current.

Original language	English
Pages (from-to)	324-326
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	3
DOIs	https://doi.org/10.1063/1.119562
Publication status	Published - 1997 Jul 21

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.119562

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AB - To improve silicon field emitters, an amorphous-carbon-nitride (a-CN) coating was applied by helical resonator plasma-enhanced chemical vapor deposition. By this process, a-CN was very uniformly coated on silicon tips without any damage. Microstructural and electrical investigation of the silicon and a-CN coated field emitters were performed, a-CN coating lowered turn-on voltage and increased emission current. Negative electron affinity of carbon nitride is suggested for enhancing emission current.

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Fabrication of amorphous-carbon-nitride field emitters

Abstract

All Science Journal Classification (ASJC) codes

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