Abstract
To improve silicon field emitters, an amorphous-carbon-nitride (a-CN) coating was applied by helical resonator plasma-enhanced chemical vapor deposition. By this process, a-CN was very uniformly coated on silicon tips without any damage. Microstructural and electrical investigation of the silicon and a-CN coated field emitters were performed, a-CN coating lowered turn-on voltage and increased emission current. Negative electron affinity of carbon nitride is suggested for enhancing emission current.
| Original language | English |
|---|---|
| Pages (from-to) | 324-326 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 71 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1997 Jul 21 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Chi, E. J., Shim, J. Y., Baik, H. K., & Lee, S. M. (1997). Fabrication of amorphous-carbon-nitride field emitters. Applied Physics Letters, 71(3), 324-326. https://doi.org/10.1063/1.119562