Fabrication of amorphous-carbon-nitride field emitters

Eung Joon Chi, Jae Yeob Shim, Hong Koo Baik, Sung Man Lee

Research output: Contribution to journalArticle

56 Citations (Scopus)

Abstract

To improve silicon field emitters, an amorphous-carbon-nitride (a-CN) coating was applied by helical resonator plasma-enhanced chemical vapor deposition. By this process, a-CN was very uniformly coated on silicon tips without any damage. Microstructural and electrical investigation of the silicon and a-CN coated field emitters were performed, a-CN coating lowered turn-on voltage and increased emission current. Negative electron affinity of carbon nitride is suggested for enhancing emission current.

Original languageEnglish
Pages (from-to)324-326
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number3
DOIs
Publication statusPublished - 1997 Jul 21

Fingerprint

carbon nitrides
emitters
fabrication
silicon
negative electron affinity
coatings
resonators
vapor deposition
damage
electric potential

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Chi, Eung Joon ; Shim, Jae Yeob ; Baik, Hong Koo ; Lee, Sung Man. / Fabrication of amorphous-carbon-nitride field emitters. In: Applied Physics Letters. 1997 ; Vol. 71, No. 3. pp. 324-326.
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Fabrication of amorphous-carbon-nitride field emitters. / Chi, Eung Joon; Shim, Jae Yeob; Baik, Hong Koo; Lee, Sung Man.

In: Applied Physics Letters, Vol. 71, No. 3, 21.07.1997, p. 324-326.

Research output: Contribution to journalArticle

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