Abstract
To improve silicon field emitters, an amorphous-carbon-nitride (a-CN) coating was applied by helical resonator plasma-enhanced chemical vapor deposition. By this process, a-CN was very uniformly coated on silicon tips without any damage. Microstructural and electrical investigation of the silicon and a-CN coated field emitters were performed, a-CN coating lowered turn-on voltage and increased emission current. Negative electron affinity of carbon nitride is suggested for enhancing emission current.
Original language | English |
---|---|
Pages (from-to) | 324-326 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 71 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1997 Jul 21 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)