Abstract
To improve silicon field emitters, an amorphous-carbon-nitride (a-CN) coating was applied by helical resonator plasma-enhanced chemical vapor deposition. By this process, a-CN was very uniformly coated on silicon tips without any damage. Microstructural and electrical investigation of the silicon and a-CN coated field emitters were performed, a-CN coating lowered turn-on voltage and increased emission current. Negative electron affinity of carbon nitride is suggested for enhancing emission current.
| Original language | English |
|---|---|
| Pages (from-to) | 324-326 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 71 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1997 Jul 21 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
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Fabrication of amorphous-carbon-nitride field emitters. / Chi, Eung Joon; Shim, Jae Yeob; Baik, Hong Koo; Lee, Sung Man.
In: Applied Physics Letters, Vol. 71, No. 3, 21.07.1997, p. 324-326.Research output: Contribution to journal › Article
TY - JOUR
T1 - Fabrication of amorphous-carbon-nitride field emitters
AU - Chi, Eung Joon
AU - Shim, Jae Yeob
AU - Baik, Hong Koo
AU - Lee, Sung Man
PY - 1997/7/21
Y1 - 1997/7/21
N2 - To improve silicon field emitters, an amorphous-carbon-nitride (a-CN) coating was applied by helical resonator plasma-enhanced chemical vapor deposition. By this process, a-CN was very uniformly coated on silicon tips without any damage. Microstructural and electrical investigation of the silicon and a-CN coated field emitters were performed, a-CN coating lowered turn-on voltage and increased emission current. Negative electron affinity of carbon nitride is suggested for enhancing emission current.
AB - To improve silicon field emitters, an amorphous-carbon-nitride (a-CN) coating was applied by helical resonator plasma-enhanced chemical vapor deposition. By this process, a-CN was very uniformly coated on silicon tips without any damage. Microstructural and electrical investigation of the silicon and a-CN coated field emitters were performed, a-CN coating lowered turn-on voltage and increased emission current. Negative electron affinity of carbon nitride is suggested for enhancing emission current.
UR - http://www.scopus.com/inward/record.url?scp=0002685382&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0002685382&partnerID=8YFLogxK
U2 - 10.1063/1.119562
DO - 10.1063/1.119562
M3 - Article
AN - SCOPUS:0002685382
VL - 71
SP - 324
EP - 326
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 3
ER -