Fabrication of As-doped p-type ZnO thin film and ZnO nanowire inserted p-n homojunction structure

Manoj Kumar; Jyoti Prakash Kar; In Soo Kim; Se Young Choi; Jae Min Myoung

doi:10.1007/s00339-009-5292-1

Fabrication of As-doped p-type ZnO thin film and ZnO nanowire inserted p-n homojunction structure

Manoj Kumar, Jyoti Prakash Kar, In Soo Kim, Se Young Choi, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Arsenic-doped p-type ZnO (ZnO:As) thin films were grown on Si (100) wafer by E-beam evaporation. As-grown ZnO:As film exhibited n-type conductivity whereas on annealing the conduction of ZnO:As film changes to p-type. X-ray photoelectron spectroscopy show that the bonding state of arsenic in ZnO:As film is present in As-O state. ZnO homojunction synthesized by deposition of Al-doped n-type ZnO and intrinsic nanowire ZnO on As-doped p-type ZnO showed clear p-n diode characteristics. The neutral-acceptor bound exciton (A ⁰X) and donor-acceptor-pair (DAP) emissions in the low temperature photoluminescence studies further support the p-type conduction in ZnO:As.

Original language	English
Pages (from-to)	689-692
Number of pages	4
Journal	Applied Physics A: Materials Science and Processing
Volume	97
Issue number	3
DOIs	https://doi.org/10.1007/s00339-009-5292-1
Publication status	Published - 2009 Nov

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)

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title = "Fabrication of As-doped p-type ZnO thin film and ZnO nanowire inserted p-n homojunction structure",

abstract = "Arsenic-doped p-type ZnO (ZnO:As) thin films were grown on Si (100) wafer by E-beam evaporation. As-grown ZnO:As film exhibited n-type conductivity whereas on annealing the conduction of ZnO:As film changes to p-type. X-ray photoelectron spectroscopy show that the bonding state of arsenic in ZnO:As film is present in As-O state. ZnO homojunction synthesized by deposition of Al-doped n-type ZnO and intrinsic nanowire ZnO on As-doped p-type ZnO showed clear p-n diode characteristics. The neutral-acceptor bound exciton (A 0X) and donor-acceptor-pair (DAP) emissions in the low temperature photoluminescence studies further support the p-type conduction in ZnO:As.",

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journal = "Applied Physics A: Materials Science and Processing",

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T1 - Fabrication of As-doped p-type ZnO thin film and ZnO nanowire inserted p-n homojunction structure

AU - Kumar, Manoj

AU - Kar, Jyoti Prakash

AU - Kim, In Soo

AU - Choi, Se Young

AU - Myoung, Jae Min

PY - 2009/11

Y1 - 2009/11

N2 - Arsenic-doped p-type ZnO (ZnO:As) thin films were grown on Si (100) wafer by E-beam evaporation. As-grown ZnO:As film exhibited n-type conductivity whereas on annealing the conduction of ZnO:As film changes to p-type. X-ray photoelectron spectroscopy show that the bonding state of arsenic in ZnO:As film is present in As-O state. ZnO homojunction synthesized by deposition of Al-doped n-type ZnO and intrinsic nanowire ZnO on As-doped p-type ZnO showed clear p-n diode characteristics. The neutral-acceptor bound exciton (A 0X) and donor-acceptor-pair (DAP) emissions in the low temperature photoluminescence studies further support the p-type conduction in ZnO:As.

AB - Arsenic-doped p-type ZnO (ZnO:As) thin films were grown on Si (100) wafer by E-beam evaporation. As-grown ZnO:As film exhibited n-type conductivity whereas on annealing the conduction of ZnO:As film changes to p-type. X-ray photoelectron spectroscopy show that the bonding state of arsenic in ZnO:As film is present in As-O state. ZnO homojunction synthesized by deposition of Al-doped n-type ZnO and intrinsic nanowire ZnO on As-doped p-type ZnO showed clear p-n diode characteristics. The neutral-acceptor bound exciton (A 0X) and donor-acceptor-pair (DAP) emissions in the low temperature photoluminescence studies further support the p-type conduction in ZnO:As.

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Fabrication of As-doped p-type ZnO thin film and ZnO nanowire inserted p-n homojunction structure

Abstract

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