Fabrication of As-doped p-type ZnO thin film and ZnO nanowire inserted p-n homojunction structure

Manoj Kumar, Jyoti Prakash Kar, In Soo Kim, Se Young Choi, Jae Min Myoung

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Arsenic-doped p-type ZnO (ZnO:As) thin films were grown on Si (100) wafer by E-beam evaporation. As-grown ZnO:As film exhibited n-type conductivity whereas on annealing the conduction of ZnO:As film changes to p-type. X-ray photoelectron spectroscopy show that the bonding state of arsenic in ZnO:As film is present in As-O state. ZnO homojunction synthesized by deposition of Al-doped n-type ZnO and intrinsic nanowire ZnO on As-doped p-type ZnO showed clear p-n diode characteristics. The neutral-acceptor bound exciton (A 0X) and donor-acceptor-pair (DAP) emissions in the low temperature photoluminescence studies further support the p-type conduction in ZnO:As.

Original languageEnglish
Pages (from-to)689-692
Number of pages4
JournalApplied Physics A: Materials Science and Processing
Issue number3
Publication statusPublished - 2009 Nov 1


All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

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