Abstract
Arsenic-doped p-type ZnO (ZnO:As) thin films were grown on Si (100) wafer by E-beam evaporation. As-grown ZnO:As film exhibited n-type conductivity whereas on annealing the conduction of ZnO:As film changes to p-type. X-ray photoelectron spectroscopy show that the bonding state of arsenic in ZnO:As film is present in As-O state. ZnO homojunction synthesized by deposition of Al-doped n-type ZnO and intrinsic nanowire ZnO on As-doped p-type ZnO showed clear p-n diode characteristics. The neutral-acceptor bound exciton (A 0X) and donor-acceptor-pair (DAP) emissions in the low temperature photoluminescence studies further support the p-type conduction in ZnO:As.
| Original language | English |
|---|---|
| Pages (from-to) | 689-692 |
| Number of pages | 4 |
| Journal | Applied Physics A: Materials Science and Processing |
| Volume | 97 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2009 Nov 1 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Science(all)
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Fabrication of As-doped p-type ZnO thin film and ZnO nanowire inserted p-n homojunction structure. / Kumar, Manoj; Kar, Jyoti Prakash; Kim, In Soo; Choi, Se Young; Myoung, Jae Min.
In: Applied Physics A: Materials Science and Processing, Vol. 97, No. 3, 01.11.2009, p. 689-692.Research output: Contribution to journal › Article
TY - JOUR
T1 - Fabrication of As-doped p-type ZnO thin film and ZnO nanowire inserted p-n homojunction structure
AU - Kumar, Manoj
AU - Kar, Jyoti Prakash
AU - Kim, In Soo
AU - Choi, Se Young
AU - Myoung, Jae Min
PY - 2009/11/1
Y1 - 2009/11/1
N2 - Arsenic-doped p-type ZnO (ZnO:As) thin films were grown on Si (100) wafer by E-beam evaporation. As-grown ZnO:As film exhibited n-type conductivity whereas on annealing the conduction of ZnO:As film changes to p-type. X-ray photoelectron spectroscopy show that the bonding state of arsenic in ZnO:As film is present in As-O state. ZnO homojunction synthesized by deposition of Al-doped n-type ZnO and intrinsic nanowire ZnO on As-doped p-type ZnO showed clear p-n diode characteristics. The neutral-acceptor bound exciton (A 0X) and donor-acceptor-pair (DAP) emissions in the low temperature photoluminescence studies further support the p-type conduction in ZnO:As.
AB - Arsenic-doped p-type ZnO (ZnO:As) thin films were grown on Si (100) wafer by E-beam evaporation. As-grown ZnO:As film exhibited n-type conductivity whereas on annealing the conduction of ZnO:As film changes to p-type. X-ray photoelectron spectroscopy show that the bonding state of arsenic in ZnO:As film is present in As-O state. ZnO homojunction synthesized by deposition of Al-doped n-type ZnO and intrinsic nanowire ZnO on As-doped p-type ZnO showed clear p-n diode characteristics. The neutral-acceptor bound exciton (A 0X) and donor-acceptor-pair (DAP) emissions in the low temperature photoluminescence studies further support the p-type conduction in ZnO:As.
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UR - http://www.scopus.com/inward/citedby.url?scp=70450286257&partnerID=8YFLogxK
U2 - 10.1007/s00339-009-5292-1
DO - 10.1007/s00339-009-5292-1
M3 - Article
AN - SCOPUS:70450286257
VL - 97
SP - 689
EP - 692
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
SN - 0947-8396
IS - 3
ER -