Fabrication of As-doped p-type ZnO thin film and ZnO nanowire inserted p-n homojunction structure

Manoj Kumar, Jyoti Prakash Kar, In Soo Kim, Se Young Choi, Jae Min Myoung

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Arsenic-doped p-type ZnO (ZnO:As) thin films were grown on Si (100) wafer by E-beam evaporation. As-grown ZnO:As film exhibited n-type conductivity whereas on annealing the conduction of ZnO:As film changes to p-type. X-ray photoelectron spectroscopy show that the bonding state of arsenic in ZnO:As film is present in As-O state. ZnO homojunction synthesized by deposition of Al-doped n-type ZnO and intrinsic nanowire ZnO on As-doped p-type ZnO showed clear p-n diode characteristics. The neutral-acceptor bound exciton (A 0X) and donor-acceptor-pair (DAP) emissions in the low temperature photoluminescence studies further support the p-type conduction in ZnO:As.

Original languageEnglish
Pages (from-to)689-692
Number of pages4
JournalApplied Physics A: Materials Science and Processing
Volume97
Issue number3
DOIs
Publication statusPublished - 2009 Nov 1

Fingerprint

Nanowires
Arsenic
Fabrication
Thin films
Excitons
Photoluminescence
Evaporation
Diodes
X ray photoelectron spectroscopy
Annealing
Temperature
LDS 751

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

Cite this

Kumar, Manoj ; Kar, Jyoti Prakash ; Kim, In Soo ; Choi, Se Young ; Myoung, Jae Min. / Fabrication of As-doped p-type ZnO thin film and ZnO nanowire inserted p-n homojunction structure. In: Applied Physics A: Materials Science and Processing. 2009 ; Vol. 97, No. 3. pp. 689-692.
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Fabrication of As-doped p-type ZnO thin film and ZnO nanowire inserted p-n homojunction structure. / Kumar, Manoj; Kar, Jyoti Prakash; Kim, In Soo; Choi, Se Young; Myoung, Jae Min.

In: Applied Physics A: Materials Science and Processing, Vol. 97, No. 3, 01.11.2009, p. 689-692.

Research output: Contribution to journalArticle

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AU - Kar, Jyoti Prakash

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