Arsenic-doped p-type ZnO (ZnO:As) thin films were grown on Si (100) wafer by E-beam evaporation. As-grown ZnO:As film exhibited n-type conductivity whereas on annealing the conduction of ZnO:As film changes to p-type. X-ray photoelectron spectroscopy show that the bonding state of arsenic in ZnO:As film is present in As-O state. ZnO homojunction synthesized by deposition of Al-doped n-type ZnO and intrinsic nanowire ZnO on As-doped p-type ZnO showed clear p-n diode characteristics. The neutral-acceptor bound exciton (A 0X) and donor-acceptor-pair (DAP) emissions in the low temperature photoluminescence studies further support the p-type conduction in ZnO:As.
|Number of pages||4|
|Journal||Applied Physics A: Materials Science and Processing|
|Publication status||Published - 2009 Nov|
All Science Journal Classification (ASJC) codes
- Materials Science(all)