Fabrication of Coaxial Si 1-xGe x Heterostructure Nanowires by O 2 Flow-Induced Bifurcate Reactions

Ilsoo Kim, Ki Young Lee, Ungkil Kim, Yong Hee Park, Tae Eon Park, Heon Jin Choi

Research output: Contribution to journalArticle

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Abstract

We report on bifurcate reactions on the surface of well-aligned Si 1-xGe x nanowires that enable fabrication of two different coaxial heterostructure nanowires. The Si 1-xGe x nanowires were grown in a chemical vapor transport process using SiCl 4 gas and Ge powder as a source. After the growth of nanowires, SiCl 4 flow was terminated while O 2 gas flow was introduced under vacuum. On the surface of nanowires was deposited Ge by the vapor from the Ge powder or oxidized into SiO 2 by the O 2 gas. The transition from deposition to oxidation occurred abruptly at 2 torr of O 2 pressure without any intermediate region and enables selectively fabricated Ge/Si 1-xGe x or SiO 2/Si 1-xGe x coaxial heterostructure nanowires. The rate of deposition and oxidation was dominated by interfacial reaction and diffusion of oxygen through the oxide layer, respectively.

Original languageEnglish
Pages (from-to)1535-1539
Number of pages5
JournalNanoscale Research Letters
Volume5
Issue number10
DOIs
Publication statusPublished - 2010 Jun 17

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Nanowires
Heterojunctions
nanowires
Fabrication
fabrication
Powders
Gases
Vapors
vapors
Oxidation
oxidation
Surface chemistry
gases
Oxides
gas flow
Flow of gases
Vacuum
Oxygen
vacuum
oxides

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Kim, Ilsoo ; Lee, Ki Young ; Kim, Ungkil ; Park, Yong Hee ; Park, Tae Eon ; Choi, Heon Jin. / Fabrication of Coaxial Si 1-xGe x Heterostructure Nanowires by O 2 Flow-Induced Bifurcate Reactions. In: Nanoscale Research Letters. 2010 ; Vol. 5, No. 10. pp. 1535-1539.
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Fabrication of Coaxial Si 1-xGe x Heterostructure Nanowires by O 2 Flow-Induced Bifurcate Reactions. / Kim, Ilsoo; Lee, Ki Young; Kim, Ungkil; Park, Yong Hee; Park, Tae Eon; Choi, Heon Jin.

In: Nanoscale Research Letters, Vol. 5, No. 10, 17.06.2010, p. 1535-1539.

Research output: Contribution to journalArticle

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AU - Kim, Ilsoo

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AB - We report on bifurcate reactions on the surface of well-aligned Si 1-xGe x nanowires that enable fabrication of two different coaxial heterostructure nanowires. The Si 1-xGe x nanowires were grown in a chemical vapor transport process using SiCl 4 gas and Ge powder as a source. After the growth of nanowires, SiCl 4 flow was terminated while O 2 gas flow was introduced under vacuum. On the surface of nanowires was deposited Ge by the vapor from the Ge powder or oxidized into SiO 2 by the O 2 gas. The transition from deposition to oxidation occurred abruptly at 2 torr of O 2 pressure without any intermediate region and enables selectively fabricated Ge/Si 1-xGe x or SiO 2/Si 1-xGe x coaxial heterostructure nanowires. The rate of deposition and oxidation was dominated by interfacial reaction and diffusion of oxygen through the oxide layer, respectively.

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