Fabrication of densely packed, well-ordered, high-aspect-ratio silicon nanopillars over large areas using block copolymer lithography

Vignesh Gowrishankar, Nathaniel Miller, Michael D. McGehee, Matthew J. Misner, Du Yeol Ryu, Thomas P. Russell, Eric Drockenmuller, Craig J. Hawker

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Abstract

The fabrication process for well-ordered nanopillars over large substrate areas, which are taller than 100 nm, have aspect ratios as high as 10 : 1 and occur with a periodicity of less than 35 nm is described. Various unique aspects of the materials and processing techniques enabled key features of the nanostructures: block copolymer lithography facilitated the small periodicity and the well-ordered arrangement of the pillars, a unique lift-off technique overcame potentially prohibitive lift-off problems, and a highly selective and anisotropic NF3 based reactive ion etching achieved the final nanopillar structure. The specifics of the processing can be suitably modified to obtain pillars with different physical characteristics.

Original languageEnglish
Pages (from-to)289-294
Number of pages6
JournalThin Solid Films
Volume513
Issue number1-2
DOIs
Publication statusPublished - 2006 Aug 14

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Gowrishankar, V., Miller, N., McGehee, M. D., Misner, M. J., Ryu, D. Y., Russell, T. P., Drockenmuller, E., & Hawker, C. J. (2006). Fabrication of densely packed, well-ordered, high-aspect-ratio silicon nanopillars over large areas using block copolymer lithography. Thin Solid Films, 513(1-2), 289-294. https://doi.org/10.1016/j.tsf.2006.01.064