Fabrication of epitaxial fcc Co/Cu nanostructures/Si(001)

H. M. Hwang, S. W. Shin, Ju Hwan Kang, J. Lee, J. H. Lee, J. H. Song, J. Y. Choi, H. H. Lee, H. S. Lee

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Isolated epitaxial Co(5 nm ≤ t Co ≤ 30 nm)/Cu nanostructures have been fabricated on a Si(001) substrate by using a nanoporous anodic aluminum-oxide (AAO) film as a mask during evaporation. The structural and the magnetic properties of the nanostructures are compared with those of as-grown films. The results of X-ray diffraction confirm that both the film and the nanostructure have a fee structure with a (001) surface and a Co[110]//Cu[110]//Si[001] crystallographic relation in the plane. The nanostructures with t Co ≥ 10 nm show clear four-fold symmetry of the remanent magnetization in the plane, but due to dipole interactions among nanodots, their values are smaller than those of films. The nanostructure with t Co = 5 nm shows isotropic hysteresis loops while the film with the same thickness shows a four-fold symmetry.

Original languageEnglish
Pages (from-to)1016-1019
Number of pages4
JournalJournal of the Korean Physical Society
Volume49
Issue number3
Publication statusPublished - 2006 Sep 1

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fabrication
symmetry
oxide films
masks
aluminum oxides
hysteresis
evaporation
dipoles
magnetic properties
magnetization
diffraction
x rays
interactions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Hwang, H. M., Shin, S. W., Kang, J. H., Lee, J., Lee, J. H., Song, J. H., ... Lee, H. S. (2006). Fabrication of epitaxial fcc Co/Cu nanostructures/Si(001). Journal of the Korean Physical Society, 49(3), 1016-1019.
Hwang, H. M. ; Shin, S. W. ; Kang, Ju Hwan ; Lee, J. ; Lee, J. H. ; Song, J. H. ; Choi, J. Y. ; Lee, H. H. ; Lee, H. S. / Fabrication of epitaxial fcc Co/Cu nanostructures/Si(001). In: Journal of the Korean Physical Society. 2006 ; Vol. 49, No. 3. pp. 1016-1019.
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Hwang, HM, Shin, SW, Kang, JH, Lee, J, Lee, JH, Song, JH, Choi, JY, Lee, HH & Lee, HS 2006, 'Fabrication of epitaxial fcc Co/Cu nanostructures/Si(001)', Journal of the Korean Physical Society, vol. 49, no. 3, pp. 1016-1019.

Fabrication of epitaxial fcc Co/Cu nanostructures/Si(001). / Hwang, H. M.; Shin, S. W.; Kang, Ju Hwan; Lee, J.; Lee, J. H.; Song, J. H.; Choi, J. Y.; Lee, H. H.; Lee, H. S.

In: Journal of the Korean Physical Society, Vol. 49, No. 3, 01.09.2006, p. 1016-1019.

Research output: Contribution to journalArticle

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AU - Hwang, H. M.

AU - Shin, S. W.

AU - Kang, Ju Hwan

AU - Lee, J.

AU - Lee, J. H.

AU - Song, J. H.

AU - Choi, J. Y.

AU - Lee, H. H.

AU - Lee, H. S.

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AB - Isolated epitaxial Co(5 nm ≤ t Co ≤ 30 nm)/Cu nanostructures have been fabricated on a Si(001) substrate by using a nanoporous anodic aluminum-oxide (AAO) film as a mask during evaporation. The structural and the magnetic properties of the nanostructures are compared with those of as-grown films. The results of X-ray diffraction confirm that both the film and the nanostructure have a fee structure with a (001) surface and a Co[110]//Cu[110]//Si[001] crystallographic relation in the plane. The nanostructures with t Co ≥ 10 nm show clear four-fold symmetry of the remanent magnetization in the plane, but due to dipole interactions among nanodots, their values are smaller than those of films. The nanostructure with t Co = 5 nm shows isotropic hysteresis loops while the film with the same thickness shows a four-fold symmetry.

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Hwang HM, Shin SW, Kang JH, Lee J, Lee JH, Song JH et al. Fabrication of epitaxial fcc Co/Cu nanostructures/Si(001). Journal of the Korean Physical Society. 2006 Sep 1;49(3):1016-1019.