Fabrication of excimer laser annealed poly-Si thin film transistor using polymer substrates

Soo Hee Kang, Yong Hoon Kim, Jin Woo Han, Dae Shik Seo, Jeong In Han

Research output: Contribution to journalConference article

Abstract

In this paper, the characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated on polymer substrates are investigated. The a-Si films was laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated nMOS TFT showed field-effect mobility of ∼30 cm2/Vs, on/off ratio of 105 and threshold voltage of 5 V.

Original languageEnglish
Pages (from-to)1162-1165
Number of pages4
JournalProceedings of International Meeting on Information Display
Volume2006
Publication statusPublished - 2006 Dec 1
EventIMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference - Daegu, Korea, Republic of
Duration: 2006 Aug 222006 Aug 25

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Excimer lasers
Thin film transistors
Polysilicon
Fabrication
Polymers
Substrates
Threshold voltage
Masks
Lasers

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

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abstract = "In this paper, the characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated on polymer substrates are investigated. The a-Si films was laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated nMOS TFT showed field-effect mobility of ∼30 cm2/Vs, on/off ratio of 105 and threshold voltage of 5 V.",
author = "Kang, {Soo Hee} and Kim, {Yong Hoon} and Han, {Jin Woo} and Seo, {Dae Shik} and Han, {Jeong In}",
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language = "English",
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journal = "Proceedings of International Meeting on Information Display",
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Fabrication of excimer laser annealed poly-Si thin film transistor using polymer substrates. / Kang, Soo Hee; Kim, Yong Hoon; Han, Jin Woo; Seo, Dae Shik; Han, Jeong In.

In: Proceedings of International Meeting on Information Display, Vol. 2006, 01.12.2006, p. 1162-1165.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Fabrication of excimer laser annealed poly-Si thin film transistor using polymer substrates

AU - Kang, Soo Hee

AU - Kim, Yong Hoon

AU - Han, Jin Woo

AU - Seo, Dae Shik

AU - Han, Jeong In

PY - 2006/12/1

Y1 - 2006/12/1

N2 - In this paper, the characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated on polymer substrates are investigated. The a-Si films was laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated nMOS TFT showed field-effect mobility of ∼30 cm2/Vs, on/off ratio of 105 and threshold voltage of 5 V.

AB - In this paper, the characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated on polymer substrates are investigated. The a-Si films was laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated nMOS TFT showed field-effect mobility of ∼30 cm2/Vs, on/off ratio of 105 and threshold voltage of 5 V.

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