Fabrication of excimer laser annealed poly-Si thin film transistor using polymer substrates

Soo Hee Kang, Yong Hoon Kim, Jin Woo Han, Dae Shik Seo, Jeong In Han

Research output: Contribution to journalConference articlepeer-review

Abstract

In this paper, the characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated on polymer substrates are investigated. The a-Si films was laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated nMOS TFT showed field-effect mobility of ∼30 cm2/Vs, on/off ratio of 105 and threshold voltage of 5 V.

Original languageEnglish
Pages (from-to)1162-1165
Number of pages4
JournalProceedings of International Meeting on Information Display
Volume2006
Publication statusPublished - 2006
EventIMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference - Daegu, Korea, Republic of
Duration: 2006 Aug 222006 Aug 25

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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