Fabrication of GaN/GaN

Mn core/shell nanowires and their photoluminescences

Ungkil Kim, Han Kyu Seong, Myoung Ha Kim, Heon Jin Choi

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report on the fabrication of GaN/GaN:Mn core/shell nanowires (NWs) using a two-step metalorganic chemcial vapor deposition (MOCVD) and chloride-based chemical vapor transport (CVT) process. Structural analyses indicated that the heterostructure NWs were single crystalline and exhibited a core/shell and lozenge structure. The photoluminescence (PL) of the core/shell NWs showed a peak at a center wavelength of 454 nm, which was red-shifted compared to those of GaN and GaN:Mn NWs. This outcome indicates the accumulation of excited carriers at the interfaces that would be helpful in developing novel magnetism in diluted magnetic GaN:Mn semiconductors.

Original languageEnglish
Pages (from-to)97-99
Number of pages3
JournalMaterials Letters
Volume63
Issue number1
DOIs
Publication statusPublished - 2009 Jan 15

Fingerprint

Nanowires
Photoluminescence
nanowires
photoluminescence
Fabrication
fabrication
Vapor deposition
Magnetism
Heterojunctions
Chlorides
chlorides
Vapors
vapor deposition
vapors
Semiconductor materials
Crystalline materials
Wavelength
wavelengths

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Kim, Ungkil ; Seong, Han Kyu ; Kim, Myoung Ha ; Choi, Heon Jin. / Fabrication of GaN/GaN : Mn core/shell nanowires and their photoluminescences. In: Materials Letters. 2009 ; Vol. 63, No. 1. pp. 97-99.
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Fabrication of GaN/GaN : Mn core/shell nanowires and their photoluminescences. / Kim, Ungkil; Seong, Han Kyu; Kim, Myoung Ha; Choi, Heon Jin.

In: Materials Letters, Vol. 63, No. 1, 15.01.2009, p. 97-99.

Research output: Contribution to journalArticle

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