Fabrication of high performance thin-film transistors via pressure-induced nucleation

Myung Koo Kang, Si Joon Kim, Hyun Jae Kim

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We report a method to improve the performance of polycrystalline Si (poly-Si) thin-film transistors (TFTs) via pressure-induced nucleation (PIN). During the PIN process, spatial variation in the local solidification temperature occurs because of a non-uniform pressure distribution during laser irradiation of the amorphous Si layer, which is capped with an SiO2 layer. This leads to a four-fold increase in the grain size of the poly-Si thin-films formed using the PIN process, compared with those formed using conventional excimer laser annealing. We find that thin films with optimal electrical properties can be achieved with a reduction in the number of laser irradiations from 20 to 6, as well as the preservation of the interface between the poly-Si and the SiO2 gate insulator. This interface preservation becomes possible to remove the cleaning process prior to gate insulator deposition, and we report devices with a field-effect mobility greater than 160 cm2/Vs.

Original languageEnglish
Article number6858
JournalScientific reports
Volume4
DOIs
Publication statusPublished - 2014 Oct 31

Fingerprint

transistors
nucleation
fabrication
thin films
insulators
irradiation
laser annealing
pressure distribution
excimer lasers
cleaning
solidification
lasers
grain size
electrical properties
temperature

All Science Journal Classification (ASJC) codes

  • General

Cite this

@article{e49bcb0fad4f413697e15a9d6b804d31,
title = "Fabrication of high performance thin-film transistors via pressure-induced nucleation",
abstract = "We report a method to improve the performance of polycrystalline Si (poly-Si) thin-film transistors (TFTs) via pressure-induced nucleation (PIN). During the PIN process, spatial variation in the local solidification temperature occurs because of a non-uniform pressure distribution during laser irradiation of the amorphous Si layer, which is capped with an SiO2 layer. This leads to a four-fold increase in the grain size of the poly-Si thin-films formed using the PIN process, compared with those formed using conventional excimer laser annealing. We find that thin films with optimal electrical properties can be achieved with a reduction in the number of laser irradiations from 20 to 6, as well as the preservation of the interface between the poly-Si and the SiO2 gate insulator. This interface preservation becomes possible to remove the cleaning process prior to gate insulator deposition, and we report devices with a field-effect mobility greater than 160 cm2/Vs.",
author = "Kang, {Myung Koo} and Kim, {Si Joon} and Kim, {Hyun Jae}",
year = "2014",
month = "10",
day = "31",
doi = "10.1038/srep06858",
language = "English",
volume = "4",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",

}

Fabrication of high performance thin-film transistors via pressure-induced nucleation. / Kang, Myung Koo; Kim, Si Joon; Kim, Hyun Jae.

In: Scientific reports, Vol. 4, 6858, 31.10.2014.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Fabrication of high performance thin-film transistors via pressure-induced nucleation

AU - Kang, Myung Koo

AU - Kim, Si Joon

AU - Kim, Hyun Jae

PY - 2014/10/31

Y1 - 2014/10/31

N2 - We report a method to improve the performance of polycrystalline Si (poly-Si) thin-film transistors (TFTs) via pressure-induced nucleation (PIN). During the PIN process, spatial variation in the local solidification temperature occurs because of a non-uniform pressure distribution during laser irradiation of the amorphous Si layer, which is capped with an SiO2 layer. This leads to a four-fold increase in the grain size of the poly-Si thin-films formed using the PIN process, compared with those formed using conventional excimer laser annealing. We find that thin films with optimal electrical properties can be achieved with a reduction in the number of laser irradiations from 20 to 6, as well as the preservation of the interface between the poly-Si and the SiO2 gate insulator. This interface preservation becomes possible to remove the cleaning process prior to gate insulator deposition, and we report devices with a field-effect mobility greater than 160 cm2/Vs.

AB - We report a method to improve the performance of polycrystalline Si (poly-Si) thin-film transistors (TFTs) via pressure-induced nucleation (PIN). During the PIN process, spatial variation in the local solidification temperature occurs because of a non-uniform pressure distribution during laser irradiation of the amorphous Si layer, which is capped with an SiO2 layer. This leads to a four-fold increase in the grain size of the poly-Si thin-films formed using the PIN process, compared with those formed using conventional excimer laser annealing. We find that thin films with optimal electrical properties can be achieved with a reduction in the number of laser irradiations from 20 to 6, as well as the preservation of the interface between the poly-Si and the SiO2 gate insulator. This interface preservation becomes possible to remove the cleaning process prior to gate insulator deposition, and we report devices with a field-effect mobility greater than 160 cm2/Vs.

UR - http://www.scopus.com/inward/record.url?scp=84931271270&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84931271270&partnerID=8YFLogxK

U2 - 10.1038/srep06858

DO - 10.1038/srep06858

M3 - Article

AN - SCOPUS:84931271270

VL - 4

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

M1 - 6858

ER -