Fabrication of highly dense Ru thin films by high-temperature metal-organic chemical vapor deposition with NH3 Gas as Ru oxidation suppressing agent

Ho Jung Sun, Younsoo Kim, Sung Eon Park, Kwon Hong, Jae Sung Roh, Hyun Chul Sohn

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We attempted to fabricate highly dense Ru thin films by metal-organic chemical vapor deposition at an elevated temperature of 400°C, employing NH3 gas to suppress Ru oxidation. A solution of 0.2 mol/L tris(2,4-octanedionato)ruthenium [Ru(od)3, Ru(C8H 13O2)3] dissolved in n-butylacetate was used as a Ru source and O2 as a reactant gas. It was revealed that NH 3 gas effectively eliminated residual oxygen from the Ru films. However, at higher feeding rates of a metal-organic source, Ru films showed poor densities and high electrical resistivities mainly due to significant carbon incorporation. By optimizing Ru(od)3 flow rate to less than 0.3 g/min to reduce contaminating carbon supply, we successfully produced highly dense and conductive Ru films. The best Ru film had a density of 12.2 g/cm3 and a resistivity of 12.0 μω-cm, which were excellent values close to the bulk ones.

Original languageEnglish
Pages (from-to)5482-5486
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number8 A
Publication statusPublished - 2004 Aug 1


All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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