Fabrication of highly dense Ru thin films by high-temperature metal-organic chemical vapor deposition with NH3 Gas as Ru oxidation suppressing agent

Ho Jung Sun, Younsoo Kim, Sung Eon Park, Kwon Hong, Jae Sung Roh, Hyun Chul Sohn

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We attempted to fabricate highly dense Ru thin films by metal-organic chemical vapor deposition at an elevated temperature of 400°C, employing NH3 gas to suppress Ru oxidation. A solution of 0.2 mol/L tris(2,4-octanedionato)ruthenium [Ru(od)3, Ru(C8H 13O2)3] dissolved in n-butylacetate was used as a Ru source and O2 as a reactant gas. It was revealed that NH 3 gas effectively eliminated residual oxygen from the Ru films. However, at higher feeding rates of a metal-organic source, Ru films showed poor densities and high electrical resistivities mainly due to significant carbon incorporation. By optimizing Ru(od)3 flow rate to less than 0.3 g/min to reduce contaminating carbon supply, we successfully produced highly dense and conductive Ru films. The best Ru film had a density of 12.2 g/cm3 and a resistivity of 12.0 μω-cm, which were excellent values close to the bulk ones.

Original languageEnglish
Pages (from-to)5482-5486
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number8 A
DOIs
Publication statusPublished - 2004 Aug 1

Fingerprint

Organic chemicals
metalorganic chemical vapor deposition
Chemical vapor deposition
Fabrication
Thin films
Oxidation
oxidation
fabrication
thin films
Metals
Gases
gases
Conductive films
Carbon
Ruthenium
Temperature
electrical resistivity
carbon
Flow rate
ruthenium

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

@article{b66fda32dd034815b98910f465160208,
title = "Fabrication of highly dense Ru thin films by high-temperature metal-organic chemical vapor deposition with NH3 Gas as Ru oxidation suppressing agent",
abstract = "We attempted to fabricate highly dense Ru thin films by metal-organic chemical vapor deposition at an elevated temperature of 400°C, employing NH3 gas to suppress Ru oxidation. A solution of 0.2 mol/L tris(2,4-octanedionato)ruthenium [Ru(od)3, Ru(C8H 13O2)3] dissolved in n-butylacetate was used as a Ru source and O2 as a reactant gas. It was revealed that NH 3 gas effectively eliminated residual oxygen from the Ru films. However, at higher feeding rates of a metal-organic source, Ru films showed poor densities and high electrical resistivities mainly due to significant carbon incorporation. By optimizing Ru(od)3 flow rate to less than 0.3 g/min to reduce contaminating carbon supply, we successfully produced highly dense and conductive Ru films. The best Ru film had a density of 12.2 g/cm3 and a resistivity of 12.0 μω-cm, which were excellent values close to the bulk ones.",
author = "Sun, {Ho Jung} and Younsoo Kim and Park, {Sung Eon} and Kwon Hong and Roh, {Jae Sung} and Sohn, {Hyun Chul}",
year = "2004",
month = "8",
day = "1",
doi = "10.1143/JJAP.43.5482",
language = "English",
volume = "43",
pages = "5482--5486",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "8 A",

}

Fabrication of highly dense Ru thin films by high-temperature metal-organic chemical vapor deposition with NH3 Gas as Ru oxidation suppressing agent. / Sun, Ho Jung; Kim, Younsoo; Park, Sung Eon; Hong, Kwon; Roh, Jae Sung; Sohn, Hyun Chul.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 8 A, 01.08.2004, p. 5482-5486.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Fabrication of highly dense Ru thin films by high-temperature metal-organic chemical vapor deposition with NH3 Gas as Ru oxidation suppressing agent

AU - Sun, Ho Jung

AU - Kim, Younsoo

AU - Park, Sung Eon

AU - Hong, Kwon

AU - Roh, Jae Sung

AU - Sohn, Hyun Chul

PY - 2004/8/1

Y1 - 2004/8/1

N2 - We attempted to fabricate highly dense Ru thin films by metal-organic chemical vapor deposition at an elevated temperature of 400°C, employing NH3 gas to suppress Ru oxidation. A solution of 0.2 mol/L tris(2,4-octanedionato)ruthenium [Ru(od)3, Ru(C8H 13O2)3] dissolved in n-butylacetate was used as a Ru source and O2 as a reactant gas. It was revealed that NH 3 gas effectively eliminated residual oxygen from the Ru films. However, at higher feeding rates of a metal-organic source, Ru films showed poor densities and high electrical resistivities mainly due to significant carbon incorporation. By optimizing Ru(od)3 flow rate to less than 0.3 g/min to reduce contaminating carbon supply, we successfully produced highly dense and conductive Ru films. The best Ru film had a density of 12.2 g/cm3 and a resistivity of 12.0 μω-cm, which were excellent values close to the bulk ones.

AB - We attempted to fabricate highly dense Ru thin films by metal-organic chemical vapor deposition at an elevated temperature of 400°C, employing NH3 gas to suppress Ru oxidation. A solution of 0.2 mol/L tris(2,4-octanedionato)ruthenium [Ru(od)3, Ru(C8H 13O2)3] dissolved in n-butylacetate was used as a Ru source and O2 as a reactant gas. It was revealed that NH 3 gas effectively eliminated residual oxygen from the Ru films. However, at higher feeding rates of a metal-organic source, Ru films showed poor densities and high electrical resistivities mainly due to significant carbon incorporation. By optimizing Ru(od)3 flow rate to less than 0.3 g/min to reduce contaminating carbon supply, we successfully produced highly dense and conductive Ru films. The best Ru film had a density of 12.2 g/cm3 and a resistivity of 12.0 μω-cm, which were excellent values close to the bulk ones.

UR - http://www.scopus.com/inward/record.url?scp=6344249053&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=6344249053&partnerID=8YFLogxK

U2 - 10.1143/JJAP.43.5482

DO - 10.1143/JJAP.43.5482

M3 - Article

AN - SCOPUS:6344249053

VL - 43

SP - 5482

EP - 5486

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 8 A

ER -