Fabrication of multi-level switching phase change nano-pillar device using InSe/GeSbTe stacked structure

Sung Hoon Hong, Heon Lee, Yunjung Choi, Young Kook Lee

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The InSe/GeSbTe stacked phase change materials were investigated at nano-scale for multi-level switching with a large sensing margin and fast switching. The 200 nm nano-pillar devices of InSe material and InSe/GeSbTe materials were fabricated using NIL, and its electrical properties were characterized using conducting AFM system, that was connected to a pulse generator and a voltage source. In case of InSe based nano-pillar device, it was evaluated that the fast switching speed (<100 ns) and large difference of resistance on-off ratio (>10,000) and exhibited only bi-level switching characteristics. In case of the InSe/GeSbTe PCMs structure exhibited three levels of resistance state with a few hundred times of difference between them with 100 ns reset pulse.

Original languageEnglish
Pages (from-to)S16-S20
JournalCurrent Applied Physics
Volume11
Issue number5 SUPPL.
DOIs
Publication statusPublished - 2011 Sep

Bibliographical note

Funding Information:
This work is financially supported by Samsung Electronics and the Korean Ministry of Knowledge and Economy (MKE) under the National Research Project of Phase-Change Random Access Memory Development.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

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