Fabrication of multilevel switching high density phase change data recording using stacked GeTe/GeSbTe structure

Sung Hoon Hong, Heon Lee, Kang In Kim, Yunjung Choi, Young-Kook Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The multilevel switching characteristics of stacked phase change materials with the structures of Ge2Sb2Te5, AgInSbTe/Ge2Sb2Te5, and GeTe/Ge 2Sb2Te5 were investigated at the nano scale using nanoimprint lithography and conductive atomic force microscopy. Stacked phase change materials devices consisting of nano pillars 200 nm in diameter were fabricated using nanoimprint lithography, and their electrical characteristics were evaluated using conductive atomic force microscopy, with a pulse generator and a voltage source. The stacked GeTe/Ge2Sb 2Te5 phase change materials exhibited three levels of resistance with a difference of 2 orders in magnitude between them, while the single-layer and stacked phase change materials with similar electrical resistances, such as Ge2Sb2Te5/AgInSbTe exhibited only bi level switching characteristics.

Original languageEnglish
Article number081201
JournalJapanese Journal of Applied Physics
Volume50
Issue number8 PART 1
DOIs
Publication statusPublished - 2011 Aug 1

Fingerprint

data recording
Data recording
phase change materials
Phase change materials
Nanoimprint lithography
Fabrication
fabrication
Atomic force microscopy
lithography
atomic force microscopy
Acoustic impedance
Pulse generators
pulse generators
electrical resistance
Electric potential
electric potential

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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title = "Fabrication of multilevel switching high density phase change data recording using stacked GeTe/GeSbTe structure",
abstract = "The multilevel switching characteristics of stacked phase change materials with the structures of Ge2Sb2Te5, AgInSbTe/Ge2Sb2Te5, and GeTe/Ge 2Sb2Te5 were investigated at the nano scale using nanoimprint lithography and conductive atomic force microscopy. Stacked phase change materials devices consisting of nano pillars 200 nm in diameter were fabricated using nanoimprint lithography, and their electrical characteristics were evaluated using conductive atomic force microscopy, with a pulse generator and a voltage source. The stacked GeTe/Ge2Sb 2Te5 phase change materials exhibited three levels of resistance with a difference of 2 orders in magnitude between them, while the single-layer and stacked phase change materials with similar electrical resistances, such as Ge2Sb2Te5/AgInSbTe exhibited only bi level switching characteristics.",
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Fabrication of multilevel switching high density phase change data recording using stacked GeTe/GeSbTe structure. / Hong, Sung Hoon; Lee, Heon; Kim, Kang In; Choi, Yunjung; Lee, Young-Kook.

In: Japanese Journal of Applied Physics, Vol. 50, No. 8 PART 1, 081201, 01.08.2011.

Research output: Contribution to journalArticle

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AU - Hong, Sung Hoon

AU - Lee, Heon

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AU - Lee, Young-Kook

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