We proposed a novel organic material, named collodion, as a gate dielectric layer for amorphous indium gallium zinc oxide thin film transistor. The collodion was fabricated at low temperature (125oC) and had superior dielectric characteristics (10-10 A/cm2 at 50 V) and dielectric constant (~6.57) for gate dielectric layer.
|Number of pages||3|
|Journal||Digest of Technical Papers - SID International Symposium|
|Publication status||Published - 2017|
|Event||SID Symposium, Seminar, and Exhibition 2017, Display Week 2017 - Los Angeles, United States|
Duration: 2017 May 21 → 2017 May 26
Bibliographical noteFunding Information:
This work was supported by Samsung Display.
© 2017 SID.
All Science Journal Classification (ASJC) codes