Abstract
We proposed a novel organic material, named collodion, as a gate dielectric layer for amorphous indium gallium zinc oxide thin film transistor. The collodion was fabricated at low temperature (125oC) and had superior dielectric characteristics (10-10 A/cm2 at 50 V) and dielectric constant (~6.57) for gate dielectric layer.
| Original language | English |
|---|---|
| Pages (from-to) | 1356-1358 |
| Number of pages | 3 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 48 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2017 |
| Event | SID Symposium, Seminar, and Exhibition 2017, Display Week 2017 - Los Angeles, United States Duration: 2017 May 21 → 2017 May 26 |
Bibliographical note
Funding Information:This work was supported by Samsung Display.
Publisher Copyright:
© 2017 SID.
All Science Journal Classification (ASJC) codes
- Engineering(all)