Fabrication of organic electroluminescence device with ion beam-assisted deposition of ultrathin lithium fluoride as a hole injection layer

Sang Hun Choi, Soon Moon Jeong, Won Hoe Koo, Hong Koo Baik

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

An ultrathin lithium fluoride (LiF) hole injection layer was deposited on an indium-tin-oxide (ITO) anode by an ion-beam-assisted deposition (IBAD) technique to fabricate an organic electroluminescence device. The device with the LiF layer deposited by this method has higher external quantum efficiency than a device with a LiF deposited by conventional thermal evaporation. Moreover, the hole-injection ability of the device prepared by IBAD is better than that of the device produced by a conventional method such as thermal evaporation. It is found that the surface of the LiF layer prepared by IBAD has high surface coverage on an ITO anode because the LiF layer prepared has high adatom mobility due to the ion beam energy.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume44
Issue number16-19
DOIs
Publication statusPublished - 2005 Dec 1

Fingerprint

lithium fluorides
electroluminescence
ion beams
injection
fabrication
indium oxides
tin oxides
anodes
evaporation
adatoms
quantum efficiency

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Fabrication of organic electroluminescence device with ion beam-assisted deposition of ultrathin lithium fluoride as a hole injection layer",
abstract = "An ultrathin lithium fluoride (LiF) hole injection layer was deposited on an indium-tin-oxide (ITO) anode by an ion-beam-assisted deposition (IBAD) technique to fabricate an organic electroluminescence device. The device with the LiF layer deposited by this method has higher external quantum efficiency than a device with a LiF deposited by conventional thermal evaporation. Moreover, the hole-injection ability of the device prepared by IBAD is better than that of the device produced by a conventional method such as thermal evaporation. It is found that the surface of the LiF layer prepared by IBAD has high surface coverage on an ITO anode because the LiF layer prepared has high adatom mobility due to the ion beam energy.",
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Fabrication of organic electroluminescence device with ion beam-assisted deposition of ultrathin lithium fluoride as a hole injection layer. / Choi, Sang Hun; Jeong, Soon Moon; Koo, Won Hoe; Baik, Hong Koo.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 44, No. 16-19, 01.12.2005.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Fabrication of organic electroluminescence device with ion beam-assisted deposition of ultrathin lithium fluoride as a hole injection layer

AU - Choi, Sang Hun

AU - Jeong, Soon Moon

AU - Koo, Won Hoe

AU - Baik, Hong Koo

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AB - An ultrathin lithium fluoride (LiF) hole injection layer was deposited on an indium-tin-oxide (ITO) anode by an ion-beam-assisted deposition (IBAD) technique to fabricate an organic electroluminescence device. The device with the LiF layer deposited by this method has higher external quantum efficiency than a device with a LiF deposited by conventional thermal evaporation. Moreover, the hole-injection ability of the device prepared by IBAD is better than that of the device produced by a conventional method such as thermal evaporation. It is found that the surface of the LiF layer prepared by IBAD has high surface coverage on an ITO anode because the LiF layer prepared has high adatom mobility due to the ion beam energy.

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