Abstract
An ultrathin lithium fluoride (LiF) hole injection layer was deposited on an indium-tin-oxide (ITO) anode by an ion-beam-assisted deposition (IBAD) technique to fabricate an organic electroluminescence device. The device with the LiF layer deposited by this method has higher external quantum efficiency than a device with a LiF deposited by conventional thermal evaporation. Moreover, the hole-injection ability of the device prepared by IBAD is better than that of the device produced by a conventional method such as thermal evaporation. It is found that the surface of the LiF layer prepared by IBAD has high surface coverage on an ITO anode because the LiF layer prepared has high adatom mobility due to the ion beam energy.
| Original language | English |
|---|---|
| Pages (from-to) | L603-L605 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 44 |
| Issue number | 16-19 |
| DOIs | |
| Publication status | Published - 2005 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
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Fabrication of organic electroluminescence device with ion beam-assisted deposition of ultrathin lithium fluoride as a hole injection layer. / Choi, Sang Hun; Jeong, Soon Moon; Koo, Won Hoe; Baik, Hong Koo.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 44, No. 16-19, 01.12.2005, p. L603-L605.Research output: Contribution to journal › Article
TY - JOUR
T1 - Fabrication of organic electroluminescence device with ion beam-assisted deposition of ultrathin lithium fluoride as a hole injection layer
AU - Choi, Sang Hun
AU - Jeong, Soon Moon
AU - Koo, Won Hoe
AU - Baik, Hong Koo
PY - 2005/12/1
Y1 - 2005/12/1
N2 - An ultrathin lithium fluoride (LiF) hole injection layer was deposited on an indium-tin-oxide (ITO) anode by an ion-beam-assisted deposition (IBAD) technique to fabricate an organic electroluminescence device. The device with the LiF layer deposited by this method has higher external quantum efficiency than a device with a LiF deposited by conventional thermal evaporation. Moreover, the hole-injection ability of the device prepared by IBAD is better than that of the device produced by a conventional method such as thermal evaporation. It is found that the surface of the LiF layer prepared by IBAD has high surface coverage on an ITO anode because the LiF layer prepared has high adatom mobility due to the ion beam energy.
AB - An ultrathin lithium fluoride (LiF) hole injection layer was deposited on an indium-tin-oxide (ITO) anode by an ion-beam-assisted deposition (IBAD) technique to fabricate an organic electroluminescence device. The device with the LiF layer deposited by this method has higher external quantum efficiency than a device with a LiF deposited by conventional thermal evaporation. Moreover, the hole-injection ability of the device prepared by IBAD is better than that of the device produced by a conventional method such as thermal evaporation. It is found that the surface of the LiF layer prepared by IBAD has high surface coverage on an ITO anode because the LiF layer prepared has high adatom mobility due to the ion beam energy.
UR - http://www.scopus.com/inward/record.url?scp=30544446742&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=30544446742&partnerID=8YFLogxK
U2 - 10.1143/JJAP.44.L603
DO - 10.1143/JJAP.44.L603
M3 - Article
AN - SCOPUS:30544446742
VL - 44
SP - L603-L605
JO - Japanese Journal of Applied Physics, Part 2: Letters
JF - Japanese Journal of Applied Physics, Part 2: Letters
SN - 0021-4922
IS - 16-19
ER -