Fabrication of organic electroluminescence device with ion beam-assisted deposition of ultrathin lithium fluoride as a hole injection layer

Sang Hun Choi; Soon Moon Jeong; Won Hoe Koo; Hong Koo Baik

doi:10.1143/JJAP.44.L603

Fabrication of organic electroluminescence device with ion beam-assisted deposition of ultrathin lithium fluoride as a hole injection layer

Sang Hun Choi, Soon Moon Jeong, Won Hoe Koo, Hong Koo Baik

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

7 Citations (Scopus)

Abstract

An ultrathin lithium fluoride (LiF) hole injection layer was deposited on an indium-tin-oxide (ITO) anode by an ion-beam-assisted deposition (IBAD) technique to fabricate an organic electroluminescence device. The device with the LiF layer deposited by this method has higher external quantum efficiency than a device with a LiF deposited by conventional thermal evaporation. Moreover, the hole-injection ability of the device prepared by IBAD is better than that of the device produced by a conventional method such as thermal evaporation. It is found that the surface of the LiF layer prepared by IBAD has high surface coverage on an ITO anode because the LiF layer prepared has high adatom mobility due to the ion beam energy.

Original language	English
Pages (from-to)	L603-L605
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	44
Issue number	16-19
DOIs	https://doi.org/10.1143/JJAP.44.L603
Publication status	Published - 2005 Dec 1

Fingerprint

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

Cite this

Choi, S. H., Jeong, S. M., Koo, W. H., & Baik, H. K. (2005). Fabrication of organic electroluminescence device with ion beam-assisted deposition of ultrathin lithium fluoride as a hole injection layer. Japanese Journal of Applied Physics, Part 2: Letters, 44(16-19), L603-L605. https://doi.org/10.1143/JJAP.44.L603

@article{19244590ce5246199197739b6cfbc82d,

title = "Fabrication of organic electroluminescence device with ion beam-assisted deposition of ultrathin lithium fluoride as a hole injection layer",

abstract = "An ultrathin lithium fluoride (LiF) hole injection layer was deposited on an indium-tin-oxide (ITO) anode by an ion-beam-assisted deposition (IBAD) technique to fabricate an organic electroluminescence device. The device with the LiF layer deposited by this method has higher external quantum efficiency than a device with a LiF deposited by conventional thermal evaporation. Moreover, the hole-injection ability of the device prepared by IBAD is better than that of the device produced by a conventional method such as thermal evaporation. It is found that the surface of the LiF layer prepared by IBAD has high surface coverage on an ITO anode because the LiF layer prepared has high adatom mobility due to the ion beam energy.",

author = "Choi, {Sang Hun} and Jeong, {Soon Moon} and Koo, {Won Hoe} and Baik, {Hong Koo}",

year = "2005",

month = dec

day = "1",

doi = "10.1143/JJAP.44.L603",

language = "English",

volume = "44",

pages = "L603--L605",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

number = "16-19",

}

TY - JOUR

T1 - Fabrication of organic electroluminescence device with ion beam-assisted deposition of ultrathin lithium fluoride as a hole injection layer

AU - Choi, Sang Hun

AU - Jeong, Soon Moon

AU - Koo, Won Hoe

AU - Baik, Hong Koo

PY - 2005/12/1

Y1 - 2005/12/1

N2 - An ultrathin lithium fluoride (LiF) hole injection layer was deposited on an indium-tin-oxide (ITO) anode by an ion-beam-assisted deposition (IBAD) technique to fabricate an organic electroluminescence device. The device with the LiF layer deposited by this method has higher external quantum efficiency than a device with a LiF deposited by conventional thermal evaporation. Moreover, the hole-injection ability of the device prepared by IBAD is better than that of the device produced by a conventional method such as thermal evaporation. It is found that the surface of the LiF layer prepared by IBAD has high surface coverage on an ITO anode because the LiF layer prepared has high adatom mobility due to the ion beam energy.

AB - An ultrathin lithium fluoride (LiF) hole injection layer was deposited on an indium-tin-oxide (ITO) anode by an ion-beam-assisted deposition (IBAD) technique to fabricate an organic electroluminescence device. The device with the LiF layer deposited by this method has higher external quantum efficiency than a device with a LiF deposited by conventional thermal evaporation. Moreover, the hole-injection ability of the device prepared by IBAD is better than that of the device produced by a conventional method such as thermal evaporation. It is found that the surface of the LiF layer prepared by IBAD has high surface coverage on an ITO anode because the LiF layer prepared has high adatom mobility due to the ion beam energy.

UR - http://www.scopus.com/inward/record.url?scp=30544446742&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=30544446742&partnerID=8YFLogxK

U2 - 10.1143/JJAP.44.L603

DO - 10.1143/JJAP.44.L603

M3 - Article

AN - SCOPUS:30544446742

VL - 44

SP - L603-L605

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

SN - 0021-4922

IS - 16-19

ER -

Access to Document

10.1143/JJAP.44.L603