TY - GEN
T1 - Fabrication of organic thin film transistor based on the ink-jet printed electrodes of nano silver particles
AU - Kim, Dongjo
AU - Jeong, Sunho
AU - Lee, Sul
AU - Park, Bong Kyun
AU - Moon, Jooho
PY - 2006
Y1 - 2006
N2 - In this work, we here developed a conductive ink which contains silver nano-particles from which the electrodes for organic thin film transistor were directly patterned by ink-jet printing. Nano-sized silver panicles having ∼ 20 nm diameter was used for the direct metal printing. Silver conductive ink was printed on the heavily doped n-type silicon wafer with 200-nm thick thermal SiO2 layer as a substrate. To achieve a high line resolution and smooth conductive path, the printing conditions such as the inter-drop distance, stage moving velocity and temperature of the pre-heated substrates were optimized. After the heat-treatment at temperatures of about 100 ∼ 300 °C for 30 min, the printed silver patterns exhibit metal-like appearance and the conductivity. To fabricate a coplanar type TFTs, an active material of semiconducting oligomer, which was dissolved in a proper solvent, was deposited between the ink-jet printed silver electrodes by solution process. The output and transfer characterization was measured in air. The OTFT with the ink-jetted source/drain electrodes show a mobility of 1.3 × 10-3 cm 2 V-1 s-1 in the saturation regime and on/off current ratio over 103 and a threshold voltage of about-13 V.
AB - In this work, we here developed a conductive ink which contains silver nano-particles from which the electrodes for organic thin film transistor were directly patterned by ink-jet printing. Nano-sized silver panicles having ∼ 20 nm diameter was used for the direct metal printing. Silver conductive ink was printed on the heavily doped n-type silicon wafer with 200-nm thick thermal SiO2 layer as a substrate. To achieve a high line resolution and smooth conductive path, the printing conditions such as the inter-drop distance, stage moving velocity and temperature of the pre-heated substrates were optimized. After the heat-treatment at temperatures of about 100 ∼ 300 °C for 30 min, the printed silver patterns exhibit metal-like appearance and the conductivity. To fabricate a coplanar type TFTs, an active material of semiconducting oligomer, which was dissolved in a proper solvent, was deposited between the ink-jet printed silver electrodes by solution process. The output and transfer characterization was measured in air. The OTFT with the ink-jetted source/drain electrodes show a mobility of 1.3 × 10-3 cm 2 V-1 s-1 in the saturation regime and on/off current ratio over 103 and a threshold voltage of about-13 V.
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U2 - 10.1557/proc-0937-m10-42
DO - 10.1557/proc-0937-m10-42
M3 - Conference contribution
AN - SCOPUS:33947619638
SN - 1558998942
SN - 9781558998940
T3 - Materials Research Society Symposium Proceedings
SP - 132
EP - 136
BT - Conjugated Organic Materials
PB - Materials Research Society
T2 - 2006 MRS Spring Meeting
Y2 - 17 April 2006 through 21 April 2006
ER -