Abstract
We have fabricated organic transistors based on ink-jet printed copper as source and drain electrodes. Ink-jet printing of metal nano-particles is an attractive alternative to photolithography for patterning conductive metal lines, due to the low-cost, low-waste and simple process. For conductive copper electrodes at low temperature heat-treatment below 250°C, nano-sized copper particles of 50nm diameter were printed on the highly doped silicon wafer with 300 nm-thick silicon dioxide layer that acts as a dielectric layer. It was observed that the conductivity of the ink-jet printed lines was similar to that of bulk copper material even though the heat-treatment was performed at such a low temperature. To achieve smooth conductive path with high resolution, the printing conditions of the distance between printed droplets, stage moving velocity, and temperature substrates were optimized. Pentacene was evaporated on the printed copper electrodes to fabricate the organic transistor, since pentacene offers higher mobility, better on-off ratio, improved environmental stability, and better reliability than most other organic semiconductors. The measured carrier mobility and on/off ratio of the fabricated bottom-contact organic transistor show similar performance when compared with the transistors based on evaporated gold electrodes.
| Original language | English |
|---|---|
| Title of host publication | Digital Fabrication 2005 - Final Program and Proceedings |
| Number of pages | 1 |
| Publication status | Published - 2005 Dec 1 |
| Event | Digital Fabrication 2005 - Baltimore, MD, United States Duration: 2005 Sep 18 → 2005 Sep 22 |
Publication series
| Name | Digital Fabrication 2005 - Final Program and Proceedings |
|---|
Other
| Other | Digital Fabrication 2005 |
|---|---|
| Country | United States |
| City | Baltimore, MD |
| Period | 05/9/18 → 05/9/22 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
}
Fabrication of organic transistor based on ink-jet printed copper electrodes. / Jeong, Sunho; Kim, Dongjo; Moon, Jooho.
Digital Fabrication 2005 - Final Program and Proceedings. 2005. (Digital Fabrication 2005 - Final Program and Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Fabrication of organic transistor based on ink-jet printed copper electrodes
AU - Jeong, Sunho
AU - Kim, Dongjo
AU - Moon, Jooho
PY - 2005/12/1
Y1 - 2005/12/1
N2 - We have fabricated organic transistors based on ink-jet printed copper as source and drain electrodes. Ink-jet printing of metal nano-particles is an attractive alternative to photolithography for patterning conductive metal lines, due to the low-cost, low-waste and simple process. For conductive copper electrodes at low temperature heat-treatment below 250°C, nano-sized copper particles of 50nm diameter were printed on the highly doped silicon wafer with 300 nm-thick silicon dioxide layer that acts as a dielectric layer. It was observed that the conductivity of the ink-jet printed lines was similar to that of bulk copper material even though the heat-treatment was performed at such a low temperature. To achieve smooth conductive path with high resolution, the printing conditions of the distance between printed droplets, stage moving velocity, and temperature substrates were optimized. Pentacene was evaporated on the printed copper electrodes to fabricate the organic transistor, since pentacene offers higher mobility, better on-off ratio, improved environmental stability, and better reliability than most other organic semiconductors. The measured carrier mobility and on/off ratio of the fabricated bottom-contact organic transistor show similar performance when compared with the transistors based on evaporated gold electrodes.
AB - We have fabricated organic transistors based on ink-jet printed copper as source and drain electrodes. Ink-jet printing of metal nano-particles is an attractive alternative to photolithography for patterning conductive metal lines, due to the low-cost, low-waste and simple process. For conductive copper electrodes at low temperature heat-treatment below 250°C, nano-sized copper particles of 50nm diameter were printed on the highly doped silicon wafer with 300 nm-thick silicon dioxide layer that acts as a dielectric layer. It was observed that the conductivity of the ink-jet printed lines was similar to that of bulk copper material even though the heat-treatment was performed at such a low temperature. To achieve smooth conductive path with high resolution, the printing conditions of the distance between printed droplets, stage moving velocity, and temperature substrates were optimized. Pentacene was evaporated on the printed copper electrodes to fabricate the organic transistor, since pentacene offers higher mobility, better on-off ratio, improved environmental stability, and better reliability than most other organic semiconductors. The measured carrier mobility and on/off ratio of the fabricated bottom-contact organic transistor show similar performance when compared with the transistors based on evaporated gold electrodes.
UR - http://www.scopus.com/inward/record.url?scp=29844445099&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=29844445099&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:29844445099
SN - 0892082585
T3 - Digital Fabrication 2005 - Final Program and Proceedings
BT - Digital Fabrication 2005 - Final Program and Proceedings
ER -