Fabrication of oxide-based phototransistors for visible light detection via nanowire interfaces

Dongwoo Kim, Yeong Gyu Kim, Jusung Chung, Byung Ha Kang, Jin Hyeok Lee, Hyun Jae Kim

Research output: Contribution to journalConference article

Abstract

This work shows an oxide-based phototransistor that senses visible light by creating highly defective interfaces (HDIs). HDIs are fabricated by using nanowires of hafnium oxide (HfO2) and titanium dioxide (TiO2) embedded in indium gallium zinc oxide (IGZO). It sensed red light with photo responsivity of 178.7 A/W and a signal-to-noise ratio of 105.

Original languageEnglish
Pages (from-to)1260-1263
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume49
Issue number1
DOIs
Publication statusPublished - 2018 Jan 1
EventSID Symposium, Seminar, and Exhibition 2018, Display Week 2018 - Los Angeles, United States
Duration: 2018 May 202018 May 25

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Phototransistors
Nanowires
Hafnium oxides
Fabrication
Oxides
Gallium
Zinc oxide
Titanium dioxide
Indium
Signal to noise ratio

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kim, Dongwoo ; Kim, Yeong Gyu ; Chung, Jusung ; Kang, Byung Ha ; Lee, Jin Hyeok ; Kim, Hyun Jae. / Fabrication of oxide-based phototransistors for visible light detection via nanowire interfaces. In: Digest of Technical Papers - SID International Symposium. 2018 ; Vol. 49, No. 1. pp. 1260-1263.
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Fabrication of oxide-based phototransistors for visible light detection via nanowire interfaces. / Kim, Dongwoo; Kim, Yeong Gyu; Chung, Jusung; Kang, Byung Ha; Lee, Jin Hyeok; Kim, Hyun Jae.

In: Digest of Technical Papers - SID International Symposium, Vol. 49, No. 1, 01.01.2018, p. 1260-1263.

Research output: Contribution to journalConference article

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AU - Kim, Hyun Jae

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