Fabrication of oxide-based phototransistors for visible light detection via nanowire interfaces

Dongwoo Kim, Yeong Gyu Kim, Jusung Chung, Byung Ha Kang, Jin Hyeok Lee, Hyun Jae Kim

Research output: Contribution to journalConference articlepeer-review

Abstract

This work shows an oxide-based phototransistor that senses visible light by creating highly defective interfaces (HDIs). HDIs are fabricated by using nanowires of hafnium oxide (HfO2) and titanium dioxide (TiO2) embedded in indium gallium zinc oxide (IGZO). It sensed red light with photo responsivity of 178.7 A/W and a signal-to-noise ratio of 105.

Original languageEnglish
Pages (from-to)1260-1263
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume49
Issue number1
DOIs
Publication statusPublished - 2018
EventSID Symposium, Seminar, and Exhibition 2018, Display Week 2018 - Los Angeles, United States
Duration: 2018 May 202018 May 25

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (No. 2017R1A2B3008719).

Publisher Copyright:
© 2018, Blackwell Publishing Ltd. All rights reserved.

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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