Fabrication of p-pentacene/n-Si organic photodiodes and characterization of their photoelectric properties

S. S. Kim, Y. S. Choi, Kibum Kim, J. H. Kim, Seongil Im

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Abstract

The fabrication of p-pentacene/n-Si organic photodiodes by thermal evaporation of pentacene films was discussed. The photoelectric effects were observed when the photodiodes were illuminated by a monochromatic red light. A typical rectifying behavior was exhibited by the photodiodes in the dark. The leakage current increased with the deposition temperature.

Original languageEnglish
Pages (from-to)639-641
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number4
DOIs
Publication statusPublished - 2003 Jan 27

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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