Abstract
Vertically aligned p-type ZnO (Li-N co-doped) nanowires have been synthesized by hydrothermal method on n-type Si substrate. X-ray diffraction pattern indicated a strong peak from (0 0 0 2) planes of ZnO. The appearance of a strong peak at 437 cm-1 in Raman spectra was attributed to E2 mode of ZnO. Fourier transformed infrared studies indicated the presence of a distinct characteristic absorption peaks at 490 cm-1 for ZnO stretching mode. Compositional studies revealed the formation of Li-N co-doped ZnO, where Li was bonded with both O and N. The junction properties of p-type ZnO nanowires/n-Si heterojunction diodes were evaluated by measuring I-V and C-V characteristics. I-V characteristics exhibited the rectifying behavior of a typical p-n junction diode.
| Original language | English |
|---|---|
| Pages (from-to) | 472-476 |
| Number of pages | 5 |
| Journal | Materials Chemistry and Physics |
| Volume | 121 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2010 Jun 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
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Fabrication of p-type ZnO nanowires based heterojunction diode. / Das, Sachindra Nath; Choi, Ji Hyuk; Kar, Jyoti Prakash; Lee, Tae Il; Myoung, Jae Min.
In: Materials Chemistry and Physics, Vol. 121, No. 3, 01.06.2010, p. 472-476.Research output: Contribution to journal › Article
TY - JOUR
T1 - Fabrication of p-type ZnO nanowires based heterojunction diode
AU - Das, Sachindra Nath
AU - Choi, Ji Hyuk
AU - Kar, Jyoti Prakash
AU - Lee, Tae Il
AU - Myoung, Jae Min
PY - 2010/6/1
Y1 - 2010/6/1
N2 - Vertically aligned p-type ZnO (Li-N co-doped) nanowires have been synthesized by hydrothermal method on n-type Si substrate. X-ray diffraction pattern indicated a strong peak from (0 0 0 2) planes of ZnO. The appearance of a strong peak at 437 cm-1 in Raman spectra was attributed to E2 mode of ZnO. Fourier transformed infrared studies indicated the presence of a distinct characteristic absorption peaks at 490 cm-1 for ZnO stretching mode. Compositional studies revealed the formation of Li-N co-doped ZnO, where Li was bonded with both O and N. The junction properties of p-type ZnO nanowires/n-Si heterojunction diodes were evaluated by measuring I-V and C-V characteristics. I-V characteristics exhibited the rectifying behavior of a typical p-n junction diode.
AB - Vertically aligned p-type ZnO (Li-N co-doped) nanowires have been synthesized by hydrothermal method on n-type Si substrate. X-ray diffraction pattern indicated a strong peak from (0 0 0 2) planes of ZnO. The appearance of a strong peak at 437 cm-1 in Raman spectra was attributed to E2 mode of ZnO. Fourier transformed infrared studies indicated the presence of a distinct characteristic absorption peaks at 490 cm-1 for ZnO stretching mode. Compositional studies revealed the formation of Li-N co-doped ZnO, where Li was bonded with both O and N. The junction properties of p-type ZnO nanowires/n-Si heterojunction diodes were evaluated by measuring I-V and C-V characteristics. I-V characteristics exhibited the rectifying behavior of a typical p-n junction diode.
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U2 - 10.1016/j.matchemphys.2010.02.007
DO - 10.1016/j.matchemphys.2010.02.007
M3 - Article
AN - SCOPUS:77950297153
VL - 121
SP - 472
EP - 476
JO - Materials Chemistry and Physics
JF - Materials Chemistry and Physics
SN - 0254-0584
IS - 3
ER -