Fabrication of p-type ZnO nanowires based heterojunction diode

Sachindra Nath Das; Ji Hyuk Choi; Jyoti Prakash Kar; Tae Il Lee; Jae Min Myoung

doi:10.1016/j.matchemphys.2010.02.007

Fabrication of p-type ZnO nanowires based heterojunction diode

Sachindra Nath Das, Ji Hyuk Choi, Jyoti Prakash Kar, Tae Il Lee, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

50 Citations (Scopus)

Abstract

Vertically aligned p-type ZnO (Li-N co-doped) nanowires have been synthesized by hydrothermal method on n-type Si substrate. X-ray diffraction pattern indicated a strong peak from (0 0 0 2) planes of ZnO. The appearance of a strong peak at 437 cm^-1 in Raman spectra was attributed to E₂ mode of ZnO. Fourier transformed infrared studies indicated the presence of a distinct characteristic absorption peaks at 490 cm^-1 for ZnO stretching mode. Compositional studies revealed the formation of Li-N co-doped ZnO, where Li was bonded with both O and N. The junction properties of p-type ZnO nanowires/n-Si heterojunction diodes were evaluated by measuring I-V and C-V characteristics. I-V characteristics exhibited the rectifying behavior of a typical p-n junction diode.

Original language	English
Pages (from-to)	472-476
Number of pages	5
Journal	Materials Chemistry and Physics
Volume	121
Issue number	3
DOIs	https://doi.org/10.1016/j.matchemphys.2010.02.007
Publication status	Published - 2010 Jun 1

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics

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title = "Fabrication of p-type ZnO nanowires based heterojunction diode",

abstract = "Vertically aligned p-type ZnO (Li-N co-doped) nanowires have been synthesized by hydrothermal method on n-type Si substrate. X-ray diffraction pattern indicated a strong peak from (0 0 0 2) planes of ZnO. The appearance of a strong peak at 437 cm-1 in Raman spectra was attributed to E2 mode of ZnO. Fourier transformed infrared studies indicated the presence of a distinct characteristic absorption peaks at 490 cm-1 for ZnO stretching mode. Compositional studies revealed the formation of Li-N co-doped ZnO, where Li was bonded with both O and N. The junction properties of p-type ZnO nanowires/n-Si heterojunction diodes were evaluated by measuring I-V and C-V characteristics. I-V characteristics exhibited the rectifying behavior of a typical p-n junction diode.",

author = "Das, {Sachindra Nath} and Choi, {Ji Hyuk} and Kar, {Jyoti Prakash} and Lee, {Tae Il} and Myoung, {Jae Min}",

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AU - Das, Sachindra Nath

AU - Choi, Ji Hyuk

AU - Kar, Jyoti Prakash

AU - Lee, Tae Il

AU - Myoung, Jae Min

PY - 2010/6/1

Y1 - 2010/6/1

N2 - Vertically aligned p-type ZnO (Li-N co-doped) nanowires have been synthesized by hydrothermal method on n-type Si substrate. X-ray diffraction pattern indicated a strong peak from (0 0 0 2) planes of ZnO. The appearance of a strong peak at 437 cm-1 in Raman spectra was attributed to E2 mode of ZnO. Fourier transformed infrared studies indicated the presence of a distinct characteristic absorption peaks at 490 cm-1 for ZnO stretching mode. Compositional studies revealed the formation of Li-N co-doped ZnO, where Li was bonded with both O and N. The junction properties of p-type ZnO nanowires/n-Si heterojunction diodes were evaluated by measuring I-V and C-V characteristics. I-V characteristics exhibited the rectifying behavior of a typical p-n junction diode.

AB - Vertically aligned p-type ZnO (Li-N co-doped) nanowires have been synthesized by hydrothermal method on n-type Si substrate. X-ray diffraction pattern indicated a strong peak from (0 0 0 2) planes of ZnO. The appearance of a strong peak at 437 cm-1 in Raman spectra was attributed to E2 mode of ZnO. Fourier transformed infrared studies indicated the presence of a distinct characteristic absorption peaks at 490 cm-1 for ZnO stretching mode. Compositional studies revealed the formation of Li-N co-doped ZnO, where Li was bonded with both O and N. The junction properties of p-type ZnO nanowires/n-Si heterojunction diodes were evaluated by measuring I-V and C-V characteristics. I-V characteristics exhibited the rectifying behavior of a typical p-n junction diode.

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