Fabrication of p-type ZnO nanowires based heterojunction diode

Sachindra Nath Das; Ji Hyuk Choi; Jyoti Prakash Kar; Tae Il Lee; Jae Min Myoung

doi:10.1016/j.matchemphys.2010.02.007

Fabrication of p-type ZnO nanowires based heterojunction diode

Sachindra Nath Das, Ji Hyuk Choi, Jyoti Prakash Kar, Tae Il Lee, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

50 Citations (Scopus)

Abstract

Vertically aligned p-type ZnO (Li-N co-doped) nanowires have been synthesized by hydrothermal method on n-type Si substrate. X-ray diffraction pattern indicated a strong peak from (0 0 0 2) planes of ZnO. The appearance of a strong peak at 437 cm^-1 in Raman spectra was attributed to E₂ mode of ZnO. Fourier transformed infrared studies indicated the presence of a distinct characteristic absorption peaks at 490 cm^-1 for ZnO stretching mode. Compositional studies revealed the formation of Li-N co-doped ZnO, where Li was bonded with both O and N. The junction properties of p-type ZnO nanowires/n-Si heterojunction diodes were evaluated by measuring I-V and C-V characteristics. I-V characteristics exhibited the rectifying behavior of a typical p-n junction diode.

Original language	English
Pages (from-to)	472-476
Number of pages	5
Journal	Materials Chemistry and Physics
Volume	121
Issue number	3
DOIs	https://doi.org/10.1016/j.matchemphys.2010.02.007
Publication status	Published - 2010 Jun 1

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All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics

Cite this

Das, S. N., Choi, J. H., Kar, J. P., Lee, T. I., & Myoung, J. M. (2010). Fabrication of p-type ZnO nanowires based heterojunction diode. Materials Chemistry and Physics, 121(3), 472-476. https://doi.org/10.1016/j.matchemphys.2010.02.007

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abstract = "Vertically aligned p-type ZnO (Li-N co-doped) nanowires have been synthesized by hydrothermal method on n-type Si substrate. X-ray diffraction pattern indicated a strong peak from (0 0 0 2) planes of ZnO. The appearance of a strong peak at 437 cm-1 in Raman spectra was attributed to E2 mode of ZnO. Fourier transformed infrared studies indicated the presence of a distinct characteristic absorption peaks at 490 cm-1 for ZnO stretching mode. Compositional studies revealed the formation of Li-N co-doped ZnO, where Li was bonded with both O and N. The junction properties of p-type ZnO nanowires/n-Si heterojunction diodes were evaluated by measuring I-V and C-V characteristics. I-V characteristics exhibited the rectifying behavior of a typical p-n junction diode.",

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AU - Myoung, Jae Min

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10.1016/j.matchemphys.2010.02.007