Fabrication of p-type ZnO nanowires based heterojunction diode

Sachindra Nath Das, Ji Hyuk Choi, Jyoti Prakash Kar, Tae Il Lee, Jae Min Myoung

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Abstract

Vertically aligned p-type ZnO (Li-N co-doped) nanowires have been synthesized by hydrothermal method on n-type Si substrate. X-ray diffraction pattern indicated a strong peak from (0 0 0 2) planes of ZnO. The appearance of a strong peak at 437 cm-1 in Raman spectra was attributed to E2 mode of ZnO. Fourier transformed infrared studies indicated the presence of a distinct characteristic absorption peaks at 490 cm-1 for ZnO stretching mode. Compositional studies revealed the formation of Li-N co-doped ZnO, where Li was bonded with both O and N. The junction properties of p-type ZnO nanowires/n-Si heterojunction diodes were evaluated by measuring I-V and C-V characteristics. I-V characteristics exhibited the rectifying behavior of a typical p-n junction diode.

Original languageEnglish
Pages (from-to)472-476
Number of pages5
JournalMaterials Chemistry and Physics
Volume121
Issue number3
DOIs
Publication statusPublished - 2010 Jun 1

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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