Fabrication of rough Al doped ZnO films deposited by low pressure chemical vapor deposition for high efficiency thin film solar cells

Doyoung Kim, Ilgu Yun, Hyungjun Kim

Research output: Contribution to journalArticle

109 Citations (Scopus)

Abstract

The low pressure chemical vapor deposition (LP-CVD) of Al doped ZnO thin film was investigated for transparent electrode of thin film solar cell. For LP-CVD, diethylzinc and trimethylaluminum were used as Zn and Al precursors, respectively, while pure water was used as a reactant. Self-textured surface was obtained, resulting in the increase of haze factor reaching up to 35%. Based on the characterization of LP-CVD ZnO thin films, we fabricated the optimized superstrate p-i-n a-Si:H solar cell on glass substrate.

Original languageEnglish
JournalCurrent Applied Physics
Volume10
Issue numberSUPPL. 3
DOIs
Publication statusPublished - 2010 Aug 17

Fingerprint

Low pressure chemical vapor deposition
low pressure
solar cells
vapor deposition
Fabrication
fabrication
thin films
Thin films
haze
Solar cells
Glass
Electrodes
electrodes
Water
glass
Substrates
water
Thin film solar cells

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

@article{461747b1ef2a4becb6aa525170338097,
title = "Fabrication of rough Al doped ZnO films deposited by low pressure chemical vapor deposition for high efficiency thin film solar cells",
abstract = "The low pressure chemical vapor deposition (LP-CVD) of Al doped ZnO thin film was investigated for transparent electrode of thin film solar cell. For LP-CVD, diethylzinc and trimethylaluminum were used as Zn and Al precursors, respectively, while pure water was used as a reactant. Self-textured surface was obtained, resulting in the increase of haze factor reaching up to 35{\%}. Based on the characterization of LP-CVD ZnO thin films, we fabricated the optimized superstrate p-i-n a-Si:H solar cell on glass substrate.",
author = "Doyoung Kim and Ilgu Yun and Hyungjun Kim",
year = "2010",
month = "8",
day = "17",
doi = "10.1016/j.cap.2010.02.030",
language = "English",
volume = "10",
journal = "Current Applied Physics",
issn = "1567-1739",
publisher = "Elsevier",
number = "SUPPL. 3",

}

TY - JOUR

T1 - Fabrication of rough Al doped ZnO films deposited by low pressure chemical vapor deposition for high efficiency thin film solar cells

AU - Kim, Doyoung

AU - Yun, Ilgu

AU - Kim, Hyungjun

PY - 2010/8/17

Y1 - 2010/8/17

N2 - The low pressure chemical vapor deposition (LP-CVD) of Al doped ZnO thin film was investigated for transparent electrode of thin film solar cell. For LP-CVD, diethylzinc and trimethylaluminum were used as Zn and Al precursors, respectively, while pure water was used as a reactant. Self-textured surface was obtained, resulting in the increase of haze factor reaching up to 35%. Based on the characterization of LP-CVD ZnO thin films, we fabricated the optimized superstrate p-i-n a-Si:H solar cell on glass substrate.

AB - The low pressure chemical vapor deposition (LP-CVD) of Al doped ZnO thin film was investigated for transparent electrode of thin film solar cell. For LP-CVD, diethylzinc and trimethylaluminum were used as Zn and Al precursors, respectively, while pure water was used as a reactant. Self-textured surface was obtained, resulting in the increase of haze factor reaching up to 35%. Based on the characterization of LP-CVD ZnO thin films, we fabricated the optimized superstrate p-i-n a-Si:H solar cell on glass substrate.

UR - http://www.scopus.com/inward/record.url?scp=77955485072&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955485072&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2010.02.030

DO - 10.1016/j.cap.2010.02.030

M3 - Article

AN - SCOPUS:77955485072

VL - 10

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

IS - SUPPL. 3

ER -