TY - JOUR
T1 - Fabrication of rough Al doped ZnO films deposited by low pressure chemical vapor deposition for high efficiency thin film solar cells
AU - Kim, Doyoung
AU - Yun, Ilgu
AU - Kim, Hyungjun
PY - 2010
Y1 - 2010
N2 - The low pressure chemical vapor deposition (LP-CVD) of Al doped ZnO thin film was investigated for transparent electrode of thin film solar cell. For LP-CVD, diethylzinc and trimethylaluminum were used as Zn and Al precursors, respectively, while pure water was used as a reactant. Self-textured surface was obtained, resulting in the increase of haze factor reaching up to 35%. Based on the characterization of LP-CVD ZnO thin films, we fabricated the optimized superstrate p-i-n a-Si:H solar cell on glass substrate.
AB - The low pressure chemical vapor deposition (LP-CVD) of Al doped ZnO thin film was investigated for transparent electrode of thin film solar cell. For LP-CVD, diethylzinc and trimethylaluminum were used as Zn and Al precursors, respectively, while pure water was used as a reactant. Self-textured surface was obtained, resulting in the increase of haze factor reaching up to 35%. Based on the characterization of LP-CVD ZnO thin films, we fabricated the optimized superstrate p-i-n a-Si:H solar cell on glass substrate.
UR - http://www.scopus.com/inward/record.url?scp=77955485072&partnerID=8YFLogxK
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U2 - 10.1016/j.cap.2010.02.030
DO - 10.1016/j.cap.2010.02.030
M3 - Article
AN - SCOPUS:77955485072
SN - 1567-1739
VL - 10
SP - S459-S462
JO - Current Applied Physics
JF - Current Applied Physics
IS - SUPPL. 3
ER -