Fabrication of rough Al doped ZnO films deposited by low pressure chemical vapor deposition for high efficiency thin film solar cells

Doyoung Kim, Ilgu Yun, Hyungjun Kim

Research output: Contribution to journalArticle

114 Citations (Scopus)

Abstract

The low pressure chemical vapor deposition (LP-CVD) of Al doped ZnO thin film was investigated for transparent electrode of thin film solar cell. For LP-CVD, diethylzinc and trimethylaluminum were used as Zn and Al precursors, respectively, while pure water was used as a reactant. Self-textured surface was obtained, resulting in the increase of haze factor reaching up to 35%. Based on the characterization of LP-CVD ZnO thin films, we fabricated the optimized superstrate p-i-n a-Si:H solar cell on glass substrate.

Original languageEnglish
Pages (from-to)S459-S462
JournalCurrent Applied Physics
Volume10
Issue numberSUPPL. 3
DOIs
Publication statusPublished - 2010 Aug 17

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

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