Fabrication of single-electron tunneling devices

K. H. Yoo, J. C. Park, J. W. Park, J. B. Choi

Research output: Contribution to journalConference article

Abstract

We have fabricated very small Al/AlOx/Al junctions connected in series using electron-beam lithography and double-angle evaporation techniques. The average junction area is obtained to be 150 × 150 nm2. The properties of these junctions will be discussed in the conference.

Original languageEnglish
Pages (from-to)263-264
Number of pages2
JournalCPEM Digest (Conference on Precision Electromagnetic Measurements)
Publication statusPublished - 1996 Jan 1
EventProceedings of the 1996 Conference on Precision Electromagnetic Measurements - Braunschweig, Ger
Duration: 1996 Jun 171996 Jun 20

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Electron tunneling
Electron beam lithography
electron tunneling
Evaporation
Fabrication
fabrication
lithography
evaporation
electron beams

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Electrical and Electronic Engineering

Cite this

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title = "Fabrication of single-electron tunneling devices",
abstract = "We have fabricated very small Al/AlOx/Al junctions connected in series using electron-beam lithography and double-angle evaporation techniques. The average junction area is obtained to be 150 × 150 nm2. The properties of these junctions will be discussed in the conference.",
author = "Yoo, {K. H.} and Park, {J. C.} and Park, {J. W.} and Choi, {J. B.}",
year = "1996",
month = "1",
day = "1",
language = "English",
pages = "263--264",
journal = "CPEM Digest (Conference on Precision Electromagnetic Measurements)",
issn = "0589-1485",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

Fabrication of single-electron tunneling devices. / Yoo, K. H.; Park, J. C.; Park, J. W.; Choi, J. B.

In: CPEM Digest (Conference on Precision Electromagnetic Measurements), 01.01.1996, p. 263-264.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Fabrication of single-electron tunneling devices

AU - Yoo, K. H.

AU - Park, J. C.

AU - Park, J. W.

AU - Choi, J. B.

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N2 - We have fabricated very small Al/AlOx/Al junctions connected in series using electron-beam lithography and double-angle evaporation techniques. The average junction area is obtained to be 150 × 150 nm2. The properties of these junctions will be discussed in the conference.

AB - We have fabricated very small Al/AlOx/Al junctions connected in series using electron-beam lithography and double-angle evaporation techniques. The average junction area is obtained to be 150 × 150 nm2. The properties of these junctions will be discussed in the conference.

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M3 - Conference article

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JO - CPEM Digest (Conference on Precision Electromagnetic Measurements)

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