Fabrication of single-electron tunneling devices

K. H. Yoo; J. C. Park; J. W. Park; J. B. Choi

Fabrication of single-electron tunneling devices

K. H. Yoo, J. C. Park, J. W. Park, J. B. Choi

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have fabricated very small Al/AlO_x/Al junctions connected in series using electron-beam lithography and double-angle evaporation techniques. The average junction area is obtained to be 150 × 150 nm². The properties of these junctions will be discussed in the conference.

Original language	English
Pages (from-to)	263-264
Number of pages	2
Journal	CPEM Digest (Conference on Precision Electromagnetic Measurements)
Publication status	Published - 1996
Event	Proceedings of the 1996 Conference on Precision Electromagnetic Measurements - Braunschweig, Ger Duration: 1996 Jun 17 → 1996 Jun 20

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Electrical and Electronic Engineering

Cite this

@article{c11259c9c1d24f949d8fbd5d2b37da3e,

title = "Fabrication of single-electron tunneling devices",

abstract = "We have fabricated very small Al/AlOx/Al junctions connected in series using electron-beam lithography and double-angle evaporation techniques. The average junction area is obtained to be 150 × 150 nm2. The properties of these junctions will be discussed in the conference.",

author = "Yoo, {K. H.} and Park, {J. C.} and Park, {J. W.} and Choi, {J. B.}",

year = "1996",

language = "English",

pages = "263--264",

journal = "CPEM Digest (Conference on Precision Electromagnetic Measurements)",

issn = "0589-1485",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1996 Conference on Precision Electromagnetic Measurements ; Conference date: 17-06-1996 Through 20-06-1996",

}

TY - JOUR

T1 - Fabrication of single-electron tunneling devices

AU - Yoo, K. H.

AU - Park, J. C.

AU - Park, J. W.

AU - Choi, J. B.

PY - 1996

Y1 - 1996

N2 - We have fabricated very small Al/AlOx/Al junctions connected in series using electron-beam lithography and double-angle evaporation techniques. The average junction area is obtained to be 150 × 150 nm2. The properties of these junctions will be discussed in the conference.

AB - We have fabricated very small Al/AlOx/Al junctions connected in series using electron-beam lithography and double-angle evaporation techniques. The average junction area is obtained to be 150 × 150 nm2. The properties of these junctions will be discussed in the conference.

UR - http://www.scopus.com/inward/record.url?scp=0029765197&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029765197&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029765197

SN - 0589-1485

SP - 263

EP - 264

JO - CPEM Digest (Conference on Precision Electromagnetic Measurements)

JF - CPEM Digest (Conference on Precision Electromagnetic Measurements)

T2 - Proceedings of the 1996 Conference on Precision Electromagnetic Measurements

Y2 - 17 June 1996 through 20 June 1996

ER -

Fabrication of single-electron tunneling devices

Abstract

All Science Journal Classification (ASJC) codes

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