Fabrication of Si1-xGex alloy nanowire FETs

Eun Kyoung Jeon, Han Kyu Sung, Jeong O. Lee, Heon Jin Choi, Ju Jin Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

we have fabricated field effect transistors (FETs) by using high quality Si1-xGex alloy nanowires. To obtain stable contacts between Si1-xGex alloy nanowire and Ni/Au electrodes, we annealed the samples at 300°C furnace with Ar atmosphere or RTA at 400 °C. [4] Three different Si1-xGex alloy nanowires (x=5, 15, 30) were used for the fabrication of field effect transistors, and p-type gating effect observed from Si1-xGex alloy nanowire devices. Among them, pronounced p-type transistor behavior, with on/off ratios as high as 106 observed from Si0.7Ge0.3 nanowire field effect transistor.

Original languageEnglish
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages502-503
Number of pages2
DOIs
Publication statusPublished - 2006
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: 2006 Oct 222006 Oct 25

Publication series

Name2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume1

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
CountryKorea, Republic of
CityGyeongju
Period06/10/2206/10/25

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Materials Science(all)

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    Jeon, E. K., Sung, H. K., Lee, J. O., Choi, H. J., & Kim, J. J. (2006). Fabrication of Si1-xGex alloy nanowire FETs. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (pp. 502-503). [4388837] (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1). https://doi.org/10.1109/NMDC.2006.4388837