Fabrication of Si1-xGex alloy nanowire FETs

Eun Kyoung Jeon, Han Kyu Sung, Jeong O. Lee, Heon-Jin Choi, Ju Jin Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

we have fabricated field effect transistors (FETs) by using high quality Si1-xGex alloy nanowires. To obtain stable contacts between Si1-xGex alloy nanowire and Ni/Au electrodes, we annealed the samples at 300°C furnace with Ar atmosphere or RTA at 400 °C. [4] Three different Si1-xGex alloy nanowires (x=5, 15, 30) were used for the fabrication of field effect transistors, and p-type gating effect observed from Si1-xGex alloy nanowire devices. Among them, pronounced p-type transistor behavior, with on/off ratios as high as 106 observed from Si0.7Ge0.3 nanowire field effect transistor.

Original languageEnglish
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages502-503
Number of pages2
Volume1
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: 2006 Oct 222006 Oct 25

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
CountryKorea, Republic of
CityGyeongju
Period06/10/2206/10/25

Fingerprint

Field effect transistors
Nanowires
Fabrication
Rapid thermal annealing
Transistors
Furnaces
Electrodes

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Materials Science(all)

Cite this

Jeon, E. K., Sung, H. K., Lee, J. O., Choi, H-J., & Kim, J. J. (2006). Fabrication of Si1-xGex alloy nanowire FETs. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (Vol. 1, pp. 502-503). [4388837] https://doi.org/10.1109/NMDC.2006.4388837
Jeon, Eun Kyoung ; Sung, Han Kyu ; Lee, Jeong O. ; Choi, Heon-Jin ; Kim, Ju Jin. / Fabrication of Si1-xGex alloy nanowire FETs. 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1 2006. pp. 502-503
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abstract = "we have fabricated field effect transistors (FETs) by using high quality Si1-xGex alloy nanowires. To obtain stable contacts between Si1-xGex alloy nanowire and Ni/Au electrodes, we annealed the samples at 300°C furnace with Ar atmosphere or RTA at 400 °C. [4] Three different Si1-xGex alloy nanowires (x=5, 15, 30) were used for the fabrication of field effect transistors, and p-type gating effect observed from Si1-xGex alloy nanowire devices. Among them, pronounced p-type transistor behavior, with on/off ratios as high as 106 observed from Si0.7Ge0.3 nanowire field effect transistor.",
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Jeon, EK, Sung, HK, Lee, JO, Choi, H-J & Kim, JJ 2006, Fabrication of Si1-xGex alloy nanowire FETs. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. vol. 1, 4388837, pp. 502-503, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06/10/22. https://doi.org/10.1109/NMDC.2006.4388837

Fabrication of Si1-xGex alloy nanowire FETs. / Jeon, Eun Kyoung; Sung, Han Kyu; Lee, Jeong O.; Choi, Heon-Jin; Kim, Ju Jin.

2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1 2006. p. 502-503 4388837.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - we have fabricated field effect transistors (FETs) by using high quality Si1-xGex alloy nanowires. To obtain stable contacts between Si1-xGex alloy nanowire and Ni/Au electrodes, we annealed the samples at 300°C furnace with Ar atmosphere or RTA at 400 °C. [4] Three different Si1-xGex alloy nanowires (x=5, 15, 30) were used for the fabrication of field effect transistors, and p-type gating effect observed from Si1-xGex alloy nanowire devices. Among them, pronounced p-type transistor behavior, with on/off ratios as high as 106 observed from Si0.7Ge0.3 nanowire field effect transistor.

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Jeon EK, Sung HK, Lee JO, Choi H-J, Kim JJ. Fabrication of Si1-xGex alloy nanowire FETs. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1. 2006. p. 502-503. 4388837 https://doi.org/10.1109/NMDC.2006.4388837