Fabrication of solution-processed amorphous indium zinc oxide thin-film transistors at low temperatures using deep-UV irradiation under wet conditions

Jee Ho Park, Soo Sang Chae, Young Bum Yoo, Ji Hoon Lee, Tae Il Lee, Hong Koo Baik

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We fabricated solution-processed indium zinc oxide (IZO) thin film transistors (TFTs) at annealing temperatures as low as 250 C using deep UV (DUV) irradiation in water vapor medium. The DUV light decomposed the carbon compounds in the IZO films, and the hydroxyl radicals generated when water vapor reacted with ozone effectively oxidized the films. These phenomena were confirmed by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. Finally, we fabricated DUV-treated IZO TFTs in water-vapor medium at 250 C with a mobility of 1.2 cm2/Vs and an on/off current ratio of 2.66 × 106.

Original languageEnglish
Pages (from-to)121-125
Number of pages5
JournalChemical Physics Letters
Volume597
DOIs
Publication statusPublished - 2014 Mar 28

Fingerprint

Zinc Oxide
Indium
Steam
Thin film transistors
zinc oxides
indium oxides
Oxide films
water vapor
transistors
Irradiation
Fabrication
fabrication
irradiation
thin films
carbon compounds
Ozone
hydroxyl radicals
Ultraviolet radiation
Hydroxyl Radical
Temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Cite this

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title = "Fabrication of solution-processed amorphous indium zinc oxide thin-film transistors at low temperatures using deep-UV irradiation under wet conditions",
abstract = "We fabricated solution-processed indium zinc oxide (IZO) thin film transistors (TFTs) at annealing temperatures as low as 250 C using deep UV (DUV) irradiation in water vapor medium. The DUV light decomposed the carbon compounds in the IZO films, and the hydroxyl radicals generated when water vapor reacted with ozone effectively oxidized the films. These phenomena were confirmed by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. Finally, we fabricated DUV-treated IZO TFTs in water-vapor medium at 250 C with a mobility of 1.2 cm2/Vs and an on/off current ratio of 2.66 × 106.",
author = "Park, {Jee Ho} and Chae, {Soo Sang} and Yoo, {Young Bum} and Lee, {Ji Hoon} and Lee, {Tae Il} and Baik, {Hong Koo}",
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Fabrication of solution-processed amorphous indium zinc oxide thin-film transistors at low temperatures using deep-UV irradiation under wet conditions. / Park, Jee Ho; Chae, Soo Sang; Yoo, Young Bum; Lee, Ji Hoon; Lee, Tae Il; Baik, Hong Koo.

In: Chemical Physics Letters, Vol. 597, 28.03.2014, p. 121-125.

Research output: Contribution to journalArticle

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T1 - Fabrication of solution-processed amorphous indium zinc oxide thin-film transistors at low temperatures using deep-UV irradiation under wet conditions

AU - Park, Jee Ho

AU - Chae, Soo Sang

AU - Yoo, Young Bum

AU - Lee, Ji Hoon

AU - Lee, Tae Il

AU - Baik, Hong Koo

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Y1 - 2014/3/28

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AB - We fabricated solution-processed indium zinc oxide (IZO) thin film transistors (TFTs) at annealing temperatures as low as 250 C using deep UV (DUV) irradiation in water vapor medium. The DUV light decomposed the carbon compounds in the IZO films, and the hydroxyl radicals generated when water vapor reacted with ozone effectively oxidized the films. These phenomena were confirmed by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. Finally, we fabricated DUV-treated IZO TFTs in water-vapor medium at 250 C with a mobility of 1.2 cm2/Vs and an on/off current ratio of 2.66 × 106.

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