We fabricated solution-processed indium zinc oxide (IZO) thin film transistors (TFTs) at annealing temperatures as low as 250 C using deep UV (DUV) irradiation in water vapor medium. The DUV light decomposed the carbon compounds in the IZO films, and the hydroxyl radicals generated when water vapor reacted with ozone effectively oxidized the films. These phenomena were confirmed by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. Finally, we fabricated DUV-treated IZO TFTs in water-vapor medium at 250 C with a mobility of 1.2 cm2/Vs and an on/off current ratio of 2.66 × 106.
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea (NRF- 2010-0029207 ), funded by Korea Ministry of Science, ICT & Future Planning (MSIP) . Further funding was provided by LG Display .
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
- Physical and Theoretical Chemistry