Fabrication of solution-processed amorphous indium zinc oxide thin-film transistors at low temperatures using deep-UV irradiation under wet conditions

Jee Ho Park, Soo Sang Chae, Young Bum Yoo, Ji Hoon Lee, Tae Il Lee, Hong Koo Baik

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

We fabricated solution-processed indium zinc oxide (IZO) thin film transistors (TFTs) at annealing temperatures as low as 250 C using deep UV (DUV) irradiation in water vapor medium. The DUV light decomposed the carbon compounds in the IZO films, and the hydroxyl radicals generated when water vapor reacted with ozone effectively oxidized the films. These phenomena were confirmed by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. Finally, we fabricated DUV-treated IZO TFTs in water-vapor medium at 250 C with a mobility of 1.2 cm2/Vs and an on/off current ratio of 2.66 × 106.

Original languageEnglish
Pages (from-to)121-125
Number of pages5
JournalChemical Physics Letters
Volume597
DOIs
Publication statusPublished - 2014 Mar 28

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF- 2010-0029207 ), funded by Korea Ministry of Science, ICT & Future Planning (MSIP) . Further funding was provided by LG Display .

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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