Fabrication of solution-processed amorphous indium zinc oxide thin-film transistors at low temperatures using deep-UV irradiation under wet conditions

Jee Ho Park; Soo Sang Chae; Young Bum Yoo; Ji Hoon Lee; Tae Il Lee; Hong Koo Baik

doi:10.1016/j.cplett.2014.02.050

Fabrication of solution-processed amorphous indium zinc oxide thin-film transistors at low temperatures using deep-UV irradiation under wet conditions

Jee Ho Park, Soo Sang Chae, Young Bum Yoo, Ji Hoon Lee, Tae Il Lee, Hong Koo Baik

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We fabricated solution-processed indium zinc oxide (IZO) thin film transistors (TFTs) at annealing temperatures as low as 250 C using deep UV (DUV) irradiation in water vapor medium. The DUV light decomposed the carbon compounds in the IZO films, and the hydroxyl radicals generated when water vapor reacted with ozone effectively oxidized the films. These phenomena were confirmed by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. Finally, we fabricated DUV-treated IZO TFTs in water-vapor medium at 250 C with a mobility of 1.2 cm²/Vs and an on/off current ratio of 2.66 × 10⁶.

Original language	English
Pages (from-to)	121-125
Number of pages	5
Journal	Chemical Physics Letters
Volume	597
DOIs	https://doi.org/10.1016/j.cplett.2014.02.050
Publication status	Published - 2014 Mar 28

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF- 2010-0029207 ), funded by Korea Ministry of Science, ICT & Future Planning (MSIP) . Further funding was provided by LG Display .

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)
Physical and Theoretical Chemistry

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10.1016/j.cplett.2014.02.050

Cite this

@article{270cd2d2ff7c40fc9861875f99a02eb9,

title = "Fabrication of solution-processed amorphous indium zinc oxide thin-film transistors at low temperatures using deep-UV irradiation under wet conditions",

abstract = "We fabricated solution-processed indium zinc oxide (IZO) thin film transistors (TFTs) at annealing temperatures as low as 250 C using deep UV (DUV) irradiation in water vapor medium. The DUV light decomposed the carbon compounds in the IZO films, and the hydroxyl radicals generated when water vapor reacted with ozone effectively oxidized the films. These phenomena were confirmed by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. Finally, we fabricated DUV-treated IZO TFTs in water-vapor medium at 250 C with a mobility of 1.2 cm2/Vs and an on/off current ratio of 2.66 × 106.",

author = "Park, {Jee Ho} and Chae, {Soo Sang} and Yoo, {Young Bum} and Lee, {Ji Hoon} and Lee, {Tae Il} and Baik, {Hong Koo}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF- 2010-0029207 ), funded by Korea Ministry of Science, ICT & Future Planning (MSIP) . Further funding was provided by LG Display .",

year = "2014",

month = mar,

day = "28",

doi = "10.1016/j.cplett.2014.02.050",

language = "English",

volume = "597",

pages = "121--125",

journal = "Chemical Physics Letters",

issn = "0009-2614",

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TY - JOUR

T1 - Fabrication of solution-processed amorphous indium zinc oxide thin-film transistors at low temperatures using deep-UV irradiation under wet conditions

AU - Park, Jee Ho

AU - Chae, Soo Sang

AU - Yoo, Young Bum

AU - Lee, Ji Hoon

AU - Lee, Tae Il

AU - Baik, Hong Koo

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF- 2010-0029207 ), funded by Korea Ministry of Science, ICT & Future Planning (MSIP) . Further funding was provided by LG Display .

PY - 2014/3/28

Y1 - 2014/3/28

N2 - We fabricated solution-processed indium zinc oxide (IZO) thin film transistors (TFTs) at annealing temperatures as low as 250 C using deep UV (DUV) irradiation in water vapor medium. The DUV light decomposed the carbon compounds in the IZO films, and the hydroxyl radicals generated when water vapor reacted with ozone effectively oxidized the films. These phenomena were confirmed by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. Finally, we fabricated DUV-treated IZO TFTs in water-vapor medium at 250 C with a mobility of 1.2 cm2/Vs and an on/off current ratio of 2.66 × 106.

AB - We fabricated solution-processed indium zinc oxide (IZO) thin film transistors (TFTs) at annealing temperatures as low as 250 C using deep UV (DUV) irradiation in water vapor medium. The DUV light decomposed the carbon compounds in the IZO films, and the hydroxyl radicals generated when water vapor reacted with ozone effectively oxidized the films. These phenomena were confirmed by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. Finally, we fabricated DUV-treated IZO TFTs in water-vapor medium at 250 C with a mobility of 1.2 cm2/Vs and an on/off current ratio of 2.66 × 106.

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DO - 10.1016/j.cplett.2014.02.050

M3 - Article

AN - SCOPUS:84896508709

SN - 0009-2614

VL - 597

SP - 121

EP - 125

JO - Chemical Physics Letters

JF - Chemical Physics Letters

ER -

Fabrication of solution-processed amorphous indium zinc oxide thin-film transistors at low temperatures using deep-UV irradiation under wet conditions

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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