We report the solution processed polycrystalline InGaZnO thin film transistor. The films with molar ratio of In, Ga, and Zn (1: 1: 2) were deposited by spin coating, and the device exhibits an on-to-off current ratio of ̃1.88×105 and field effect mobility of ̃0.96 cm 2/Vs, respectively.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|Publication status||Published - 2008 Oct 30|
|Event||2008 SID International Symposium - Los Angeles, CA, United States|
Duration: 2008 May 20 → 2008 May 21
All Science Journal Classification (ASJC) codes