Fabrication of solution processed inGZnO thin film transistor for active matrix backplane

Gun Hee Kim, Hyun Soo Shin, Kyung Ho Kim, Won Jun Park, Yoon Jung Choi, Byung Du Ahn, Hyun Jae Kim

Research output: Contribution to journalConference article

10 Citations (Scopus)


We report the solution processed polycrystalline InGaZnO thin film transistor. The films with molar ratio of In, Ga, and Zn (1: 1: 2) were deposited by spin coating, and the device exhibits an on-to-off current ratio of ̃1.88×105 and field effect mobility of ̃0.96 cm 2/Vs, respectively.

Original languageEnglish
Pages (from-to)1258-1261
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Issue number3
Publication statusPublished - 2008 Oct 30
Event2008 SID International Symposium - Los Angeles, CA, United States
Duration: 2008 May 202008 May 21


All Science Journal Classification (ASJC) codes

  • Engineering(all)

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