Fabrication of solution processed inGZnO thin film transistor for active matrix backplane

Gun Hee Kim, Hyun Soo Shin, Kyung Ho Kim, Won Jun Park, Yoon Jung Choi, Byung Du Ahn, Hyun Jae Kim

Research output: Contribution to journalConference article

9 Citations (Scopus)

Abstract

We report the solution processed polycrystalline InGaZnO thin film transistor. The films with molar ratio of In, Ga, and Zn (1: 1: 2) were deposited by spin coating, and the device exhibits an on-to-off current ratio of ̃1.88×105 and field effect mobility of ̃0.96 cm 2/Vs, respectively.

Original languageEnglish
Pages (from-to)1258-1261
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume39
Issue number3
Publication statusPublished - 2008 Oct 30

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Spin coating
Thin film transistors
Fabrication

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kim, Gun Hee ; Shin, Hyun Soo ; Kim, Kyung Ho ; Park, Won Jun ; Choi, Yoon Jung ; Ahn, Byung Du ; Kim, Hyun Jae. / Fabrication of solution processed inGZnO thin film transistor for active matrix backplane. In: Digest of Technical Papers - SID International Symposium. 2008 ; Vol. 39, No. 3. pp. 1258-1261.
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Fabrication of solution processed inGZnO thin film transistor for active matrix backplane. / Kim, Gun Hee; Shin, Hyun Soo; Kim, Kyung Ho; Park, Won Jun; Choi, Yoon Jung; Ahn, Byung Du; Kim, Hyun Jae.

In: Digest of Technical Papers - SID International Symposium, Vol. 39, No. 3, 30.10.2008, p. 1258-1261.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Fabrication of solution processed inGZnO thin film transistor for active matrix backplane

AU - Kim, Gun Hee

AU - Shin, Hyun Soo

AU - Kim, Kyung Ho

AU - Park, Won Jun

AU - Choi, Yoon Jung

AU - Ahn, Byung Du

AU - Kim, Hyun Jae

PY - 2008/10/30

Y1 - 2008/10/30

N2 - We report the solution processed polycrystalline InGaZnO thin film transistor. The films with molar ratio of In, Ga, and Zn (1: 1: 2) were deposited by spin coating, and the device exhibits an on-to-off current ratio of ̃1.88×105 and field effect mobility of ̃0.96 cm 2/Vs, respectively.

AB - We report the solution processed polycrystalline InGaZnO thin film transistor. The films with molar ratio of In, Ga, and Zn (1: 1: 2) were deposited by spin coating, and the device exhibits an on-to-off current ratio of ̃1.88×105 and field effect mobility of ̃0.96 cm 2/Vs, respectively.

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M3 - Conference article

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