Fabrication of three-dimensional GaAs antireflective structures by metal-assisted chemical etching

Yunwon Song; Jungwoo Oh

doi:10.1016/j.solmat.2015.08.034

Fabrication of three-dimensional GaAs antireflective structures by metal-assisted chemical etching

Yunwon Song, Jungwoo Oh

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Antireflective GaAs subwavelength structures (SWSs) were fabricated by Au-assisted chemical etching. Thermally agglomerated Au nanoparticles caused catalytic reactions with the GaAs substrates in KMnO₄ and HF etchant. Various features of the Au nanoparticles agglomerated after heat treatment of Au thin films. The reflectance of GaAs strongly depended on the three-dimensional features of the GaAs SWSs, which were controlled by Au agglomeration and chemical etching. GaAs SWSs dramatically reduced the total reflectance to 4.5% in a wavelength rage of 200-850 nm up to the incident angle of 50°. Solar-weighted total reflectance values quantitatively confirmed the highly efficient antireflective coating fabricated by metal assisted chemical etching on GaAs SWSs. To our knowledge, this is the first report that fabricates GaAs SWSs using metal-assisted chemical etching with thermally agglomerated metal catalyst. This technique is a viable alternative to conventional reactive ion etching and nano-lithography for fabricating antireflective SWSs for III-V solar cells.

Original language	English
Article number	7909
Pages (from-to)	159-164
Number of pages	6
Journal	Solar Energy Materials and Solar Cells
Volume	144
DOIs	https://doi.org/10.1016/j.solmat.2015.08.034
Publication status	Published - 2016 Jan 1

Bibliographical note

Funding Information:
This research was supported by the MSIP (Ministry of Science, ICT and Future Planning ), Korea, under the “IT Consilience Creative Program” ( IITP-2015-R0346-15-1008 ) supervised by the IITP (Institute for Information & Communications Technology Promotion). This research was also supported by grants from the Basic Science Research Program through the National Research Foundation of Korea (NRF ) funded by the Ministry of Education, Science and Technology ( 2013R1A1A2012111 ) and Future Semiconductor Device Technology Development Program ( 10044735 ) funded by MOTIE and KSRC .

Publisher Copyright:
© 2015 Elsevier B.V.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

UN SDGs

This output contributes to the following Sustainable Development Goal(s)

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10.1016/j.solmat.2015.08.034

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title = "Fabrication of three-dimensional GaAs antireflective structures by metal-assisted chemical etching",

abstract = "Antireflective GaAs subwavelength structures (SWSs) were fabricated by Au-assisted chemical etching. Thermally agglomerated Au nanoparticles caused catalytic reactions with the GaAs substrates in KMnO4 and HF etchant. Various features of the Au nanoparticles agglomerated after heat treatment of Au thin films. The reflectance of GaAs strongly depended on the three-dimensional features of the GaAs SWSs, which were controlled by Au agglomeration and chemical etching. GaAs SWSs dramatically reduced the total reflectance to 4.5% in a wavelength rage of 200-850 nm up to the incident angle of 50°. Solar-weighted total reflectance values quantitatively confirmed the highly efficient antireflective coating fabricated by metal assisted chemical etching on GaAs SWSs. To our knowledge, this is the first report that fabricates GaAs SWSs using metal-assisted chemical etching with thermally agglomerated metal catalyst. This technique is a viable alternative to conventional reactive ion etching and nano-lithography for fabricating antireflective SWSs for III-V solar cells.",

author = "Yunwon Song and Jungwoo Oh",

note = "Funding Information: This research was supported by the MSIP (Ministry of Science, ICT and Future Planning ), Korea, under the “IT Consilience Creative Program” ( IITP-2015-R0346-15-1008 ) supervised by the IITP (Institute for Information & Communications Technology Promotion). This research was also supported by grants from the Basic Science Research Program through the National Research Foundation of Korea (NRF ) funded by the Ministry of Education, Science and Technology ( 2013R1A1A2012111 ) and Future Semiconductor Device Technology Development Program ( 10044735 ) funded by MOTIE and KSRC . Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",

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N2 - Antireflective GaAs subwavelength structures (SWSs) were fabricated by Au-assisted chemical etching. Thermally agglomerated Au nanoparticles caused catalytic reactions with the GaAs substrates in KMnO4 and HF etchant. Various features of the Au nanoparticles agglomerated after heat treatment of Au thin films. The reflectance of GaAs strongly depended on the three-dimensional features of the GaAs SWSs, which were controlled by Au agglomeration and chemical etching. GaAs SWSs dramatically reduced the total reflectance to 4.5% in a wavelength rage of 200-850 nm up to the incident angle of 50°. Solar-weighted total reflectance values quantitatively confirmed the highly efficient antireflective coating fabricated by metal assisted chemical etching on GaAs SWSs. To our knowledge, this is the first report that fabricates GaAs SWSs using metal-assisted chemical etching with thermally agglomerated metal catalyst. This technique is a viable alternative to conventional reactive ion etching and nano-lithography for fabricating antireflective SWSs for III-V solar cells.

AB - Antireflective GaAs subwavelength structures (SWSs) were fabricated by Au-assisted chemical etching. Thermally agglomerated Au nanoparticles caused catalytic reactions with the GaAs substrates in KMnO4 and HF etchant. Various features of the Au nanoparticles agglomerated after heat treatment of Au thin films. The reflectance of GaAs strongly depended on the three-dimensional features of the GaAs SWSs, which were controlled by Au agglomeration and chemical etching. GaAs SWSs dramatically reduced the total reflectance to 4.5% in a wavelength rage of 200-850 nm up to the incident angle of 50°. Solar-weighted total reflectance values quantitatively confirmed the highly efficient antireflective coating fabricated by metal assisted chemical etching on GaAs SWSs. To our knowledge, this is the first report that fabricates GaAs SWSs using metal-assisted chemical etching with thermally agglomerated metal catalyst. This technique is a viable alternative to conventional reactive ion etching and nano-lithography for fabricating antireflective SWSs for III-V solar cells.

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Fabrication of three-dimensional GaAs antireflective structures by metal-assisted chemical etching

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

UN SDGs

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