Fabrication of transferable Al2O3 nanosheet by atomic layer deposition for graphene FET

Hanearl Jung, Jusang Park, Il Kwon Oh, Taejin Choi, Sanggeun Lee, Juree Hong, Taeyoon Lee, Soo Hyun Kim, Hyungjun Kim

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Without introducing defects in the monolayer of carbon lattice, the deposition of high-κ dielectric material is a significant challenge because of the difficulty of high-quality oxide nucleation on graphene. Previous investigations of the deposition of high-κ dielectrics on graphene have often reported significant degradation of the electrical properties of graphene. In this study, we report a new way to integrate high-κ dielectrics with graphene by transferring a high-κ dielectric nanosheet onto graphene. Al2O3 film was deposited on a sacrificial layer using an atomic layer deposition process and the Al2O3 nanosheet was fabricated by removing the sacrificial layer. Top-gated graphene field-effect transistors were fabricated and characterized using the Al 2O3 nanosheet as a gate dielectric. The top-gated graphene was demonstrated to have a field-effect mobility up to 2200 cm2/(V s). This method provides a new method for high-performance graphene devices with broad potential impacts reaching from high-frequency high-speed circuits to flexible electronics.

Original languageEnglish
Pages (from-to)2764-2769
Number of pages6
JournalACS Applied Materials and Interfaces
Volume6
Issue number4
DOIs
Publication statusPublished - 2014 Feb 26

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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