Fabrication of transparent nanocrystalline InGaO 3(ZnO) 2 thin films using a solution process

Kyung Ho Kim, Gun Hee Kim, Hyun Jae Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We used a solution process to fabricate transparent nanocrystalline (nc) InGaO 3(ZnO) 2 thin films on a glass substrate. The formation of the nanocrystals resulted from a self-solid phase reaction (S-SPR). The nanocrystals began to form at a temperature of ̃300 °C, and grew gradually with increasing postannealing temperatures. The optical transmittance of the nc-InGaO 3(ZnO) 2 thin film was ̃92% in the visible range. Fewer oxygen deficiencies occurred in the InGaO 3(ZnO) 2 thin film that was transited from the amorphous (a) to the nc phase. The ratio of oxygen to indium, gallium, and zinc was 1.16, which is close to the stoichiometric value for the nc-InGaO 3(ZnO) 2 thin film.

Original languageEnglish
Pages (from-to)1660-1663
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume207
Issue number7
DOIs
Publication statusPublished - 2010 Jul 1

Fingerprint

Fabrication
Thin films
fabrication
thin films
Nanocrystals
nanocrystals
Oxygen
Gallium
Indium
hypoxia
Opacity
gallium
indium
solid phases
Zinc
transmittance
zinc
Glass
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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abstract = "We used a solution process to fabricate transparent nanocrystalline (nc) InGaO 3(ZnO) 2 thin films on a glass substrate. The formation of the nanocrystals resulted from a self-solid phase reaction (S-SPR). The nanocrystals began to form at a temperature of ̃300 °C, and grew gradually with increasing postannealing temperatures. The optical transmittance of the nc-InGaO 3(ZnO) 2 thin film was ̃92{\%} in the visible range. Fewer oxygen deficiencies occurred in the InGaO 3(ZnO) 2 thin film that was transited from the amorphous (a) to the nc phase. The ratio of oxygen to indium, gallium, and zinc was 1.16, which is close to the stoichiometric value for the nc-InGaO 3(ZnO) 2 thin film.",
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Fabrication of transparent nanocrystalline InGaO 3(ZnO) 2 thin films using a solution process. / Kim, Kyung Ho; Kim, Gun Hee; Kim, Hyun Jae.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 207, No. 7, 01.07.2010, p. 1660-1663.

Research output: Contribution to journalArticle

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