In this study, homojunction light-emitting diodes (LEDs) based on n-type zinc oxide (ZnO) nanorods (NRs)/silver (Ag)-doped p-type ZnO NRs were successfully fabricated by low-temperature solution process. Here, the Ag thin film used as a template and dopant source for the growth of p-type ZnO NRs as well as a bottom electrode. The Ag-doped p-type ZnO NRs were synthesized using an ammonium hydroxide solution, which possesses a high pH value of 11.6 to dissolve the Ag film and form Ag+ ions in the solution. Using these Ag-doped p-type ZnO NRs as a template, n-type ZnO NRs were epitaxially grown on top of them at 90 °C to form ZnO NRs p-n homojunction. These ZnO NRs p-n homojunction LEDs showed a typical rectifying behavior with a turn-on voltage of 3.5 V and a high rectifying ratio of 1.5 × 105 at 5 V. Furthermore, under a forward bias of 9 V, the LED exhibited a wide yellow electroluminescence emission centered at 645 nm, which was attributed to the various emission sites of ZnO deep-level defects. This study suggests a facile fabrication method for ZnO NRs p-n homojunction LEDs by using a simple p-type doping approach with Ag during the low-temperature solution process.
Bibliographical noteFunding Information:
This research was supported by Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2017M3D1A1027831).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films