Fabrication of ZnO Nanorods p-n Homojunction Light-Emitting Diodes Using Ag Film as Self-Doping Source for p-Type ZnO Nanorods

Do Kyun Kwon, Yoann Porte, Jae Min Myoung

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

In this study, homojunction light-emitting diodes (LEDs) based on n-type zinc oxide (ZnO) nanorods (NRs)/silver (Ag)-doped p-type ZnO NRs were successfully fabricated by low-temperature solution process. Here, the Ag thin film used as a template and dopant source for the growth of p-type ZnO NRs as well as a bottom electrode. The Ag-doped p-type ZnO NRs were synthesized using an ammonium hydroxide solution, which possesses a high pH value of 11.6 to dissolve the Ag film and form Ag+ ions in the solution. Using these Ag-doped p-type ZnO NRs as a template, n-type ZnO NRs were epitaxially grown on top of them at 90 °C to form ZnO NRs p-n homojunction. These ZnO NRs p-n homojunction LEDs showed a typical rectifying behavior with a turn-on voltage of 3.5 V and a high rectifying ratio of 1.5 × 105 at 5 V. Furthermore, under a forward bias of 9 V, the LED exhibited a wide yellow electroluminescence emission centered at 645 nm, which was attributed to the various emission sites of ZnO deep-level defects. This study suggests a facile fabrication method for ZnO NRs p-n homojunction LEDs by using a simple p-type doping approach with Ag during the low-temperature solution process.

Original languageEnglish
Pages (from-to)11993-12001
Number of pages9
JournalJournal of Physical Chemistry C
Volume122
Issue number22
DOIs
Publication statusPublished - 2018 Jun 7

Fingerprint

Zinc Oxide
homojunctions
Zinc oxide
Nanorods
zinc oxides
nanorods
Light emitting diodes
light emitting diodes
Doping (additives)
Fabrication
fabrication
templates
Ammonium Hydroxide
Ammonium hydroxide
Electroluminescence
Silver
electroluminescence
hydroxides
silver
Ions

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Cite this

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title = "Fabrication of ZnO Nanorods p-n Homojunction Light-Emitting Diodes Using Ag Film as Self-Doping Source for p-Type ZnO Nanorods",
abstract = "In this study, homojunction light-emitting diodes (LEDs) based on n-type zinc oxide (ZnO) nanorods (NRs)/silver (Ag)-doped p-type ZnO NRs were successfully fabricated by low-temperature solution process. Here, the Ag thin film used as a template and dopant source for the growth of p-type ZnO NRs as well as a bottom electrode. The Ag-doped p-type ZnO NRs were synthesized using an ammonium hydroxide solution, which possesses a high pH value of 11.6 to dissolve the Ag film and form Ag+ ions in the solution. Using these Ag-doped p-type ZnO NRs as a template, n-type ZnO NRs were epitaxially grown on top of them at 90 °C to form ZnO NRs p-n homojunction. These ZnO NRs p-n homojunction LEDs showed a typical rectifying behavior with a turn-on voltage of 3.5 V and a high rectifying ratio of 1.5 × 105 at 5 V. Furthermore, under a forward bias of 9 V, the LED exhibited a wide yellow electroluminescence emission centered at 645 nm, which was attributed to the various emission sites of ZnO deep-level defects. This study suggests a facile fabrication method for ZnO NRs p-n homojunction LEDs by using a simple p-type doping approach with Ag during the low-temperature solution process.",
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Fabrication of ZnO Nanorods p-n Homojunction Light-Emitting Diodes Using Ag Film as Self-Doping Source for p-Type ZnO Nanorods. / Kwon, Do Kyun; Porte, Yoann; Myoung, Jae Min.

In: Journal of Physical Chemistry C, Vol. 122, No. 22, 07.06.2018, p. 11993-12001.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Fabrication of ZnO Nanorods p-n Homojunction Light-Emitting Diodes Using Ag Film as Self-Doping Source for p-Type ZnO Nanorods

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AU - Porte, Yoann

AU - Myoung, Jae Min

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AB - In this study, homojunction light-emitting diodes (LEDs) based on n-type zinc oxide (ZnO) nanorods (NRs)/silver (Ag)-doped p-type ZnO NRs were successfully fabricated by low-temperature solution process. Here, the Ag thin film used as a template and dopant source for the growth of p-type ZnO NRs as well as a bottom electrode. The Ag-doped p-type ZnO NRs were synthesized using an ammonium hydroxide solution, which possesses a high pH value of 11.6 to dissolve the Ag film and form Ag+ ions in the solution. Using these Ag-doped p-type ZnO NRs as a template, n-type ZnO NRs were epitaxially grown on top of them at 90 °C to form ZnO NRs p-n homojunction. These ZnO NRs p-n homojunction LEDs showed a typical rectifying behavior with a turn-on voltage of 3.5 V and a high rectifying ratio of 1.5 × 105 at 5 V. Furthermore, under a forward bias of 9 V, the LED exhibited a wide yellow electroluminescence emission centered at 645 nm, which was attributed to the various emission sites of ZnO deep-level defects. This study suggests a facile fabrication method for ZnO NRs p-n homojunction LEDs by using a simple p-type doping approach with Ag during the low-temperature solution process.

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