Fabrication of ZnO thin film-nanowires hybrid homojunction on silicon substrate

J. P. Kar, M. Kumar, J. H. Choi, S. N. Das, S. Y. Choi, J. M. Myoung

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

In this paper, the formation of a p-n ZnO thin film-nanowires hybrid homojunction on silicon substrate has been investigated. P-type ZnO thin film is formed by both e-beam evaporation and RF magnetron sputtering techniques. In order to fabricate 3-dimentional hybrid structures, ZnO nanowires were grown on p-type ZnO films by metal organic chemical vapor deposition techniques. The X-ray diffraction results showed that both ZnO thin films and nanowires are c-axis oriented. The formation of p-n ZnO homojunction is verified by current-voltage measurements. Typical diode behavior and photoconductivity were observed in both designs.

Original languageEnglish
Pages (from-to)1337-1341
Number of pages5
JournalSolid State Communications
Volume149
Issue number33-34
DOIs
Publication statusPublished - 2009 Sep

Bibliographical note

Funding Information:
This work was supported by the IT R&D program of MKE/IITA [2008-F-023-01, Next generation future device fabricated by using nano junction].

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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