Fabrication of ZnO thin film-nanowires hybrid homojunction on silicon substrate

J. P. Kar; M. Kumar; J. H. Choi; S. N. Das; S. Y. Choi; J. M. Myoung

doi:10.1016/j.ssc.2009.05.024

Fabrication of ZnO thin film-nanowires hybrid homojunction on silicon substrate

J. P. Kar, M. Kumar, J. H. Choi, S. N. Das, S. Y. Choi, J. M. Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

In this paper, the formation of a p-n ZnO thin film-nanowires hybrid homojunction on silicon substrate has been investigated. P-type ZnO thin film is formed by both e-beam evaporation and RF magnetron sputtering techniques. In order to fabricate 3-dimentional hybrid structures, ZnO nanowires were grown on p-type ZnO films by metal organic chemical vapor deposition techniques. The X-ray diffraction results showed that both ZnO thin films and nanowires are c-axis oriented. The formation of p-n ZnO homojunction is verified by current-voltage measurements. Typical diode behavior and photoconductivity were observed in both designs.

Original language	English
Pages (from-to)	1337-1341
Number of pages	5
Journal	Solid State Communications
Volume	149
Issue number	33-34
DOIs	https://doi.org/10.1016/j.ssc.2009.05.024
Publication status	Published - 2009 Sep

Bibliographical note

Funding Information:
This work was supported by the IT R&D program of MKE/IITA [2008-F-023-01, Next generation future device fabricated by using nano junction].

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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title = "Fabrication of ZnO thin film-nanowires hybrid homojunction on silicon substrate",

abstract = "In this paper, the formation of a p-n ZnO thin film-nanowires hybrid homojunction on silicon substrate has been investigated. P-type ZnO thin film is formed by both e-beam evaporation and RF magnetron sputtering techniques. In order to fabricate 3-dimentional hybrid structures, ZnO nanowires were grown on p-type ZnO films by metal organic chemical vapor deposition techniques. The X-ray diffraction results showed that both ZnO thin films and nanowires are c-axis oriented. The formation of p-n ZnO homojunction is verified by current-voltage measurements. Typical diode behavior and photoconductivity were observed in both designs.",

author = "Kar, {J. P.} and M. Kumar and Choi, {J. H.} and Das, {S. N.} and Choi, {S. Y.} and Myoung, {J. M.}",

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AU - Kar, J. P.

AU - Kumar, M.

AU - Choi, J. H.

AU - Das, S. N.

AU - Choi, S. Y.

AU - Myoung, J. M.

N1 - Funding Information: This work was supported by the IT R&D program of MKE/IITA [2008-F-023-01, Next generation future device fabricated by using nano junction].

PY - 2009/9

Y1 - 2009/9

N2 - In this paper, the formation of a p-n ZnO thin film-nanowires hybrid homojunction on silicon substrate has been investigated. P-type ZnO thin film is formed by both e-beam evaporation and RF magnetron sputtering techniques. In order to fabricate 3-dimentional hybrid structures, ZnO nanowires were grown on p-type ZnO films by metal organic chemical vapor deposition techniques. The X-ray diffraction results showed that both ZnO thin films and nanowires are c-axis oriented. The formation of p-n ZnO homojunction is verified by current-voltage measurements. Typical diode behavior and photoconductivity were observed in both designs.

AB - In this paper, the formation of a p-n ZnO thin film-nanowires hybrid homojunction on silicon substrate has been investigated. P-type ZnO thin film is formed by both e-beam evaporation and RF magnetron sputtering techniques. In order to fabricate 3-dimentional hybrid structures, ZnO nanowires were grown on p-type ZnO films by metal organic chemical vapor deposition techniques. The X-ray diffraction results showed that both ZnO thin films and nanowires are c-axis oriented. The formation of p-n ZnO homojunction is verified by current-voltage measurements. Typical diode behavior and photoconductivity were observed in both designs.

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