Fabrication of ZnO thin film-nanowires hybrid homojunction on silicon substrate

J. P. Kar, M. Kumar, J. H. Choi, S. N. Das, S. Y. Choi, J. M. Myoung

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

In this paper, the formation of a p-n ZnO thin film-nanowires hybrid homojunction on silicon substrate has been investigated. P-type ZnO thin film is formed by both e-beam evaporation and RF magnetron sputtering techniques. In order to fabricate 3-dimentional hybrid structures, ZnO nanowires were grown on p-type ZnO films by metal organic chemical vapor deposition techniques. The X-ray diffraction results showed that both ZnO thin films and nanowires are c-axis oriented. The formation of p-n ZnO homojunction is verified by current-voltage measurements. Typical diode behavior and photoconductivity were observed in both designs.

Original languageEnglish
Pages (from-to)1337-1341
Number of pages5
JournalSolid State Communications
Volume149
Issue number33-34
DOIs
Publication statusPublished - 2009 Sep 1

Fingerprint

homojunctions
Silicon
Nanowires
nanowires
Fabrication
Thin films
fabrication
silicon
Substrates
thin films
Organic Chemicals
hybrid structures
Voltage measurement
Organic chemicals
Photoconductivity
Electric current measurement
photoconductivity
Magnetron sputtering
electrical measurement
metalorganic chemical vapor deposition

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Kar, J. P. ; Kumar, M. ; Choi, J. H. ; Das, S. N. ; Choi, S. Y. ; Myoung, J. M. / Fabrication of ZnO thin film-nanowires hybrid homojunction on silicon substrate. In: Solid State Communications. 2009 ; Vol. 149, No. 33-34. pp. 1337-1341.
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Fabrication of ZnO thin film-nanowires hybrid homojunction on silicon substrate. / Kar, J. P.; Kumar, M.; Choi, J. H.; Das, S. N.; Choi, S. Y.; Myoung, J. M.

In: Solid State Communications, Vol. 149, No. 33-34, 01.09.2009, p. 1337-1341.

Research output: Contribution to journalArticle

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AB - In this paper, the formation of a p-n ZnO thin film-nanowires hybrid homojunction on silicon substrate has been investigated. P-type ZnO thin film is formed by both e-beam evaporation and RF magnetron sputtering techniques. In order to fabricate 3-dimentional hybrid structures, ZnO nanowires were grown on p-type ZnO films by metal organic chemical vapor deposition techniques. The X-ray diffraction results showed that both ZnO thin films and nanowires are c-axis oriented. The formation of p-n ZnO homojunction is verified by current-voltage measurements. Typical diode behavior and photoconductivity were observed in both designs.

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