In this paper, the formation of a p-n ZnO thin film-nanowires hybrid homojunction on silicon substrate has been investigated. P-type ZnO thin film is formed by both e-beam evaporation and RF magnetron sputtering techniques. In order to fabricate 3-dimentional hybrid structures, ZnO nanowires were grown on p-type ZnO films by metal organic chemical vapor deposition techniques. The X-ray diffraction results showed that both ZnO thin films and nanowires are c-axis oriented. The formation of p-n ZnO homojunction is verified by current-voltage measurements. Typical diode behavior and photoconductivity were observed in both designs.
Bibliographical noteFunding Information:
This work was supported by the IT R&D program of MKE/IITA [2008-F-023-01, Next generation future device fabricated by using nano junction].
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Materials Chemistry