Abstract
In this paper, the formation of a p-n ZnO thin film-nanowires hybrid homojunction on silicon substrate has been investigated. P-type ZnO thin film is formed by both e-beam evaporation and RF magnetron sputtering techniques. In order to fabricate 3-dimentional hybrid structures, ZnO nanowires were grown on p-type ZnO films by metal organic chemical vapor deposition techniques. The X-ray diffraction results showed that both ZnO thin films and nanowires are c-axis oriented. The formation of p-n ZnO homojunction is verified by current-voltage measurements. Typical diode behavior and photoconductivity were observed in both designs.
| Original language | English |
|---|---|
| Pages (from-to) | 1337-1341 |
| Number of pages | 5 |
| Journal | Solid State Communications |
| Volume | 149 |
| Issue number | 33-34 |
| DOIs | |
| Publication status | Published - 2009 Sep 1 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry
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Fabrication of ZnO thin film-nanowires hybrid homojunction on silicon substrate. / Kar, J. P.; Kumar, M.; Choi, J. H.; Das, S. N.; Choi, S. Y.; Myoung, J. M.
In: Solid State Communications, Vol. 149, No. 33-34, 01.09.2009, p. 1337-1341.Research output: Contribution to journal › Article
TY - JOUR
T1 - Fabrication of ZnO thin film-nanowires hybrid homojunction on silicon substrate
AU - Kar, J. P.
AU - Kumar, M.
AU - Choi, J. H.
AU - Das, S. N.
AU - Choi, S. Y.
AU - Myoung, J. M.
PY - 2009/9/1
Y1 - 2009/9/1
N2 - In this paper, the formation of a p-n ZnO thin film-nanowires hybrid homojunction on silicon substrate has been investigated. P-type ZnO thin film is formed by both e-beam evaporation and RF magnetron sputtering techniques. In order to fabricate 3-dimentional hybrid structures, ZnO nanowires were grown on p-type ZnO films by metal organic chemical vapor deposition techniques. The X-ray diffraction results showed that both ZnO thin films and nanowires are c-axis oriented. The formation of p-n ZnO homojunction is verified by current-voltage measurements. Typical diode behavior and photoconductivity were observed in both designs.
AB - In this paper, the formation of a p-n ZnO thin film-nanowires hybrid homojunction on silicon substrate has been investigated. P-type ZnO thin film is formed by both e-beam evaporation and RF magnetron sputtering techniques. In order to fabricate 3-dimentional hybrid structures, ZnO nanowires were grown on p-type ZnO films by metal organic chemical vapor deposition techniques. The X-ray diffraction results showed that both ZnO thin films and nanowires are c-axis oriented. The formation of p-n ZnO homojunction is verified by current-voltage measurements. Typical diode behavior and photoconductivity were observed in both designs.
UR - http://www.scopus.com/inward/record.url?scp=67649969144&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=67649969144&partnerID=8YFLogxK
U2 - 10.1016/j.ssc.2009.05.024
DO - 10.1016/j.ssc.2009.05.024
M3 - Article
AN - SCOPUS:67649969144
VL - 149
SP - 1337
EP - 1341
JO - Solid State Communications
JF - Solid State Communications
SN - 0038-1098
IS - 33-34
ER -