Abstract
In this paper, the formation of a p-n ZnO thin film-nanowires hybrid homojunction on silicon substrate has been investigated. P-type ZnO thin film is formed by both e-beam evaporation and RF magnetron sputtering techniques. In order to fabricate 3-dimentional hybrid structures, ZnO nanowires were grown on p-type ZnO films by metal organic chemical vapor deposition techniques. The X-ray diffraction results showed that both ZnO thin films and nanowires are c-axis oriented. The formation of p-n ZnO homojunction is verified by current-voltage measurements. Typical diode behavior and photoconductivity were observed in both designs.
| Original language | English |
|---|---|
| Pages (from-to) | 1337-1341 |
| Number of pages | 5 |
| Journal | Solid State Communications |
| Volume | 149 |
| Issue number | 33-34 |
| DOIs | |
| Publication status | Published - 2009 Sep 1 |
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry
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Kar, J. P., Kumar, M., Choi, J. H., Das, S. N., Choi, S. Y., & Myoung, J. M. (2009). Fabrication of ZnO thin film-nanowires hybrid homojunction on silicon substrate. Solid State Communications, 149(33-34), 1337-1341. https://doi.org/10.1016/j.ssc.2009.05.024