Facet evolution of selectively grown epitaxial Si1− xGex fin layers in sub-100 nm trench arrays

Hyunchul Jang, Sangmo Koo, Dae Seop Byeon, Yongjoon Choi, Dae Hong Ko

Research output: Contribution to journalArticle

Abstract

We selectively grew epitaxial Si1− xGex fin layers with x in the range of 0.36–0.63 in oxide trench arrays with trench width of 40, 65, and 90 nm. The dominant facet of the Si1− xGex layers changed from {1 1 1} to {1 1 3} at x = 0.56, and three types of facets were found for the layers with Ge content in the observed range. The relationship between the facet evolution and the growth rate of the facets was investigated. Blanket Si1− xGex layers grown on three substrates with orientations of (0 0 1), (1 1 1), and (1 1 3) were used for comparing the growth rate of each facet during the facet evolution. The results obtained for the blanket layers were found to be consistent with the facet evolutions in the Si1− xGex fin layers with Ge content in the range of 0.36–0.63.

Original languageEnglish
Article number125429
JournalJournal of Crystal Growth
Volume532
DOIs
Publication statusPublished - 2020 Feb 15

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Facet evolution of selectively grown epitaxial Si<sub>1−</sub> <sub>x</sub>Ge<sub>x</sub> fin layers in sub-100 nm trench arrays'. Together they form a unique fingerprint.

  • Cite this