Facile fabrication of 2-dimensional arrays of sub-10 nm single crystalline Si nanopillars using nanoparticle masks

Young Kyu Hong, Jae Ho Bahng, Geunseop Lee, Hanchul Kim, Wondong Kim, Sekyung Lee, Ja Yong Koo, Jong Il Park, Woo Ram Lee, Jinwoo Cheon

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A simple procedure for the fabrication of sub-10 nm scale Si nanopillars in a 2-D array using reactive ion etching with 8 nm Co nanoparticles as etch masks is demonstrated. The obtained Si nanopillars are single crystalline tapered pillar structures of 5 nm (top) × 8 nm (bottom) with a density of ∼4 × 10 10 pillars cm −2 on the substrate, similar to the density of Co nanoparticles distributed before the ion etching process. The uniform spatial distribution of the Si nanopillars can also be patterned into desired positions. Our fabrication method is straightforward and requires mild process conditions, which can be extended to patterned 2-D arrays of various Si nanostructures.

Original languageEnglish
Pages (from-to)3034-3035
Number of pages2
JournalChemical Communications
Volume3
Issue number24
DOIs
Publication statusPublished - 2003 Jan 1

Fingerprint

Masks
Nanoparticles
Crystalline materials
Fabrication
Reactive ion etching
Spatial distribution
Etching
Nanostructures
Ions
Substrates

All Science Journal Classification (ASJC) codes

  • Catalysis
  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Hong, Young Kyu ; Bahng, Jae Ho ; Lee, Geunseop ; Kim, Hanchul ; Kim, Wondong ; Lee, Sekyung ; Koo, Ja Yong ; Park, Jong Il ; Lee, Woo Ram ; Cheon, Jinwoo. / Facile fabrication of 2-dimensional arrays of sub-10 nm single crystalline Si nanopillars using nanoparticle masks. In: Chemical Communications. 2003 ; Vol. 3, No. 24. pp. 3034-3035.
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abstract = "A simple procedure for the fabrication of sub-10 nm scale Si nanopillars in a 2-D array using reactive ion etching with 8 nm Co nanoparticles as etch masks is demonstrated. The obtained Si nanopillars are single crystalline tapered pillar structures of 5 nm (top) × 8 nm (bottom) with a density of ∼4 × 10 10 pillars cm −2 on the substrate, similar to the density of Co nanoparticles distributed before the ion etching process. The uniform spatial distribution of the Si nanopillars can also be patterned into desired positions. Our fabrication method is straightforward and requires mild process conditions, which can be extended to patterned 2-D arrays of various Si nanostructures.",
author = "Hong, {Young Kyu} and Bahng, {Jae Ho} and Geunseop Lee and Hanchul Kim and Wondong Kim and Sekyung Lee and Koo, {Ja Yong} and Park, {Jong Il} and Lee, {Woo Ram} and Jinwoo Cheon",
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Hong, YK, Bahng, JH, Lee, G, Kim, H, Kim, W, Lee, S, Koo, JY, Park, JI, Lee, WR & Cheon, J 2003, 'Facile fabrication of 2-dimensional arrays of sub-10 nm single crystalline Si nanopillars using nanoparticle masks', Chemical Communications, vol. 3, no. 24, pp. 3034-3035. https://doi.org/10.1039/b310098g

Facile fabrication of 2-dimensional arrays of sub-10 nm single crystalline Si nanopillars using nanoparticle masks. / Hong, Young Kyu; Bahng, Jae Ho; Lee, Geunseop; Kim, Hanchul; Kim, Wondong; Lee, Sekyung; Koo, Ja Yong; Park, Jong Il; Lee, Woo Ram; Cheon, Jinwoo.

In: Chemical Communications, Vol. 3, No. 24, 01.01.2003, p. 3034-3035.

Research output: Contribution to journalArticle

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AU - Hong, Young Kyu

AU - Bahng, Jae Ho

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AU - Kim, Wondong

AU - Lee, Sekyung

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AU - Park, Jong Il

AU - Lee, Woo Ram

AU - Cheon, Jinwoo

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