Facile fabrication of ordered Si 1-xGe x nanostructures via hybrid process of selective epitaxial growth (SEG) and self-assembled nanotemplates

Sang Joon Park, Inchan Hwang, Heung Soon Lee, Sunggi Baik, Hyungjun Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this study, a facile fabrication method of the ordered Si 1-xGe x nanodots (NDs) and nanowires (NWs) was successfully developed via hybrid process of selective epitaxial growth (SEG) of Si 1-xGe x and self-assembled nanotemplates, i.e., anodic aluminum oxide (AAO) and diblock copolymer (DBC) of polystyrene-b-polymethylmethacrylate (PS-b-PMMA). Si 1- xGe x films were selectively grown on the Si windows against the oxide area at a growth temperature of 550 °C by repeating the unit cycle consisting of two consecutive steps; Si 1- xGe x deposition step using Si 2H 6 and GeH 4 and Cl 2 exposure step for removing the nuclei or deposits formed on the oxide area during the preceding Si 1- xGe x deposition step. The chemical composition of the Si 1-xGe x films was readily controlled by adjusting the flow rate of GeH 4 from 20 sccm to 45 sccm while that of Si 2H 6 gas was fixed at 10 sccm, giving rise to the variation of Ge composition in Si 1-xGe x from 22.2% to 34.0%. In order to fabricate well-ordered Si 1- xGe x nanostructures, Si windows with hexagonal arrangement were fabricated using AAO and PS-b-PMMA. AAO was prepared through multi-step anodization of the Al films of Al/Si(0 0 1) substrate under suitable anodizing conditions. Subsequently, ordered Si windows were fabricated by removing the barrier layer at the bottom of the AAO membrane by reactive ion etching (RIE). In case of PS-b-PMMA, SiO 2 templates with ordered Si windows were fabricated through replication of nano-cylindrical pattern of PS-b-PMMA to the 20-nm thick SiO 2 layers of SiO 2/Si. By utilizing the ordered Si windows obtained from both AAO and PS-b-PMMA, Si 1- xGe x was selectively grown on Si windows against the oxide area, viz., aluminum oxide in AAO and SiO 2 templates. Hexagonally ordered NDs and freestanding NWs were facilely fabricated on the Si substrates after removing the AAO and SiO 2 templates.

Original languageEnglish
Pages (from-to)166-172
Number of pages7
JournalJournal of Alloys and Compounds
Volume536
DOIs
Publication statusPublished - 2012 Sep 25

Fingerprint

Aluminum Oxide
Epitaxial growth
Nanostructures
Polystyrenes
Polymethyl Methacrylate
Fabrication
Oxides
Aluminum
Nanowires
Reactive ion etching
Anodic oxidation
Growth temperature
Substrates
Chemical analysis
Block copolymers
Deposits
Gases
Flow rate
Membranes

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

@article{ebad0c36e94b4c6dbfb7428539f42b1d,
title = "Facile fabrication of ordered Si 1-xGe x nanostructures via hybrid process of selective epitaxial growth (SEG) and self-assembled nanotemplates",
abstract = "In this study, a facile fabrication method of the ordered Si 1-xGe x nanodots (NDs) and nanowires (NWs) was successfully developed via hybrid process of selective epitaxial growth (SEG) of Si 1-xGe x and self-assembled nanotemplates, i.e., anodic aluminum oxide (AAO) and diblock copolymer (DBC) of polystyrene-b-polymethylmethacrylate (PS-b-PMMA). Si 1- xGe x films were selectively grown on the Si windows against the oxide area at a growth temperature of 550 °C by repeating the unit cycle consisting of two consecutive steps; Si 1- xGe x deposition step using Si 2H 6 and GeH 4 and Cl 2 exposure step for removing the nuclei or deposits formed on the oxide area during the preceding Si 1- xGe x deposition step. The chemical composition of the Si 1-xGe x films was readily controlled by adjusting the flow rate of GeH 4 from 20 sccm to 45 sccm while that of Si 2H 6 gas was fixed at 10 sccm, giving rise to the variation of Ge composition in Si 1-xGe x from 22.2{\%} to 34.0{\%}. In order to fabricate well-ordered Si 1- xGe x nanostructures, Si windows with hexagonal arrangement were fabricated using AAO and PS-b-PMMA. AAO was prepared through multi-step anodization of the Al films of Al/Si(0 0 1) substrate under suitable anodizing conditions. Subsequently, ordered Si windows were fabricated by removing the barrier layer at the bottom of the AAO membrane by reactive ion etching (RIE). In case of PS-b-PMMA, SiO 2 templates with ordered Si windows were fabricated through replication of nano-cylindrical pattern of PS-b-PMMA to the 20-nm thick SiO 2 layers of SiO 2/Si. By utilizing the ordered Si windows obtained from both AAO and PS-b-PMMA, Si 1- xGe x was selectively grown on Si windows against the oxide area, viz., aluminum oxide in AAO and SiO 2 templates. Hexagonally ordered NDs and freestanding NWs were facilely fabricated on the Si substrates after removing the AAO and SiO 2 templates.",
author = "Park, {Sang Joon} and Inchan Hwang and Lee, {Heung Soon} and Sunggi Baik and Hyungjun Kim",
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Facile fabrication of ordered Si 1-xGe x nanostructures via hybrid process of selective epitaxial growth (SEG) and self-assembled nanotemplates. / Park, Sang Joon; Hwang, Inchan; Lee, Heung Soon; Baik, Sunggi; Kim, Hyungjun.

In: Journal of Alloys and Compounds, Vol. 536, 25.09.2012, p. 166-172.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Facile fabrication of ordered Si 1-xGe x nanostructures via hybrid process of selective epitaxial growth (SEG) and self-assembled nanotemplates

AU - Park, Sang Joon

AU - Hwang, Inchan

AU - Lee, Heung Soon

AU - Baik, Sunggi

AU - Kim, Hyungjun

PY - 2012/9/25

Y1 - 2012/9/25

N2 - In this study, a facile fabrication method of the ordered Si 1-xGe x nanodots (NDs) and nanowires (NWs) was successfully developed via hybrid process of selective epitaxial growth (SEG) of Si 1-xGe x and self-assembled nanotemplates, i.e., anodic aluminum oxide (AAO) and diblock copolymer (DBC) of polystyrene-b-polymethylmethacrylate (PS-b-PMMA). Si 1- xGe x films were selectively grown on the Si windows against the oxide area at a growth temperature of 550 °C by repeating the unit cycle consisting of two consecutive steps; Si 1- xGe x deposition step using Si 2H 6 and GeH 4 and Cl 2 exposure step for removing the nuclei or deposits formed on the oxide area during the preceding Si 1- xGe x deposition step. The chemical composition of the Si 1-xGe x films was readily controlled by adjusting the flow rate of GeH 4 from 20 sccm to 45 sccm while that of Si 2H 6 gas was fixed at 10 sccm, giving rise to the variation of Ge composition in Si 1-xGe x from 22.2% to 34.0%. In order to fabricate well-ordered Si 1- xGe x nanostructures, Si windows with hexagonal arrangement were fabricated using AAO and PS-b-PMMA. AAO was prepared through multi-step anodization of the Al films of Al/Si(0 0 1) substrate under suitable anodizing conditions. Subsequently, ordered Si windows were fabricated by removing the barrier layer at the bottom of the AAO membrane by reactive ion etching (RIE). In case of PS-b-PMMA, SiO 2 templates with ordered Si windows were fabricated through replication of nano-cylindrical pattern of PS-b-PMMA to the 20-nm thick SiO 2 layers of SiO 2/Si. By utilizing the ordered Si windows obtained from both AAO and PS-b-PMMA, Si 1- xGe x was selectively grown on Si windows against the oxide area, viz., aluminum oxide in AAO and SiO 2 templates. Hexagonally ordered NDs and freestanding NWs were facilely fabricated on the Si substrates after removing the AAO and SiO 2 templates.

AB - In this study, a facile fabrication method of the ordered Si 1-xGe x nanodots (NDs) and nanowires (NWs) was successfully developed via hybrid process of selective epitaxial growth (SEG) of Si 1-xGe x and self-assembled nanotemplates, i.e., anodic aluminum oxide (AAO) and diblock copolymer (DBC) of polystyrene-b-polymethylmethacrylate (PS-b-PMMA). Si 1- xGe x films were selectively grown on the Si windows against the oxide area at a growth temperature of 550 °C by repeating the unit cycle consisting of two consecutive steps; Si 1- xGe x deposition step using Si 2H 6 and GeH 4 and Cl 2 exposure step for removing the nuclei or deposits formed on the oxide area during the preceding Si 1- xGe x deposition step. The chemical composition of the Si 1-xGe x films was readily controlled by adjusting the flow rate of GeH 4 from 20 sccm to 45 sccm while that of Si 2H 6 gas was fixed at 10 sccm, giving rise to the variation of Ge composition in Si 1-xGe x from 22.2% to 34.0%. In order to fabricate well-ordered Si 1- xGe x nanostructures, Si windows with hexagonal arrangement were fabricated using AAO and PS-b-PMMA. AAO was prepared through multi-step anodization of the Al films of Al/Si(0 0 1) substrate under suitable anodizing conditions. Subsequently, ordered Si windows were fabricated by removing the barrier layer at the bottom of the AAO membrane by reactive ion etching (RIE). In case of PS-b-PMMA, SiO 2 templates with ordered Si windows were fabricated through replication of nano-cylindrical pattern of PS-b-PMMA to the 20-nm thick SiO 2 layers of SiO 2/Si. By utilizing the ordered Si windows obtained from both AAO and PS-b-PMMA, Si 1- xGe x was selectively grown on Si windows against the oxide area, viz., aluminum oxide in AAO and SiO 2 templates. Hexagonally ordered NDs and freestanding NWs were facilely fabricated on the Si substrates after removing the AAO and SiO 2 templates.

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