Facile Polydimethylsiloxane Treatment of Indium Gallium Zinc Oxide Phototransistor for Visible Light-Based Multilevel Photomemory

Kyungho Park, Jin Hyeok Lee, Byung Ha Kang, Jusung Chung, Hee Jun Kim, Kyungmoon Kwak, Hyun Jae Kim

Research output: Contribution to journalArticlepeer-review

Abstract

For visible light-based multilevel photomemories, indium-gallium-zinc-oxide (IGZO, In:Ga:Zn = 1:2.8:1.4)-based phototransistors capable of detection and storage in the visible light region are fabricated through the facile polydimethylsiloxane (PDMS) treatment, a process of exfoliating the hardened PDMS after coating on the gate insulator (GI) via a drop-casting process. Here, PDMS residues form on the GI by exfoliation induced subgap states in the front channel of IGZO. Subgap states are composed of interface trap states by the less-hardened PDMS and organic-related trap states by diffusion of organic residues into the IGZO front region during the 300 °C annealing step. PDMS-treated IGZO phototransistors exhibit improved optoelectronic characteristics due to increased subgap states. Photoresponsivity, photosensitivity, and detectivity under red light irradiation with an intensity of 5 mW mm−2 are improved compared with untreated IGZO phototransistors, from 69.56 to 718.15 A W−1, from 7.64 × 103 to 4.63 × 107, and from 3.16 × 108 to 1.25 × 1012 Jones, respectively. Additionally, the possibility of multilevel photomemory is evaluated using the same devices. These devices are able to not only hold data for 18 000 s after red light irradiation for 1 s but also exhibit stable operation for up to 60 repetitive programming/erasing cycles.

Original languageEnglish
JournalAdvanced Optical Materials
DOIs
Publication statusAccepted/In press - 2022

Bibliographical note

Funding Information:
This research was supported by by the Nano‐Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT under grant 2018M3A7B4071521 and Samsung Display.

Publisher Copyright:
© 2022 Wiley-VCH GmbH.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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