We propose a profile of write pulse current-density to switch magnetization in a perpendicular magnetic tunnel junction to reduce switching time and write energy as well. Our simulated results show that an overshoot transient pulse current-density (current spike) imposed to conventional rectangular-shaped pulse current-density (main pulse) significantly improves switching speed that yields the reduction in write energy accordingly. For example, we could dramatically reduce the switching time by 80% and thereby reduce the write energy over 9% in comparison to the switching without current spike. The current spike affects the spin dynamics of the free layer and reduces the switching time mainly due to spin torque induced. On the other hand, the large Oersted field induced causes changes in spin texture. We believe our proposed write scheme can make a breakthrough in magnetic random access memory technology seeking both high speed operation and low energy consumption.
Bibliographical noteFunding Information:
This work was supported in part by SK-Hynix semiconductor, Inc., Creative Materials Discovery Program (2015M3D1A1070465) through the NRF of Korea funded by the Ministry of Science, ICT and Future Planning, and Future Semiconductor Device Technology Development Program (10044723) funded by the Ministry of Trade, Industry and Energy and the Korea Semiconductor Research Consortium.
© 2017 Author(s).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)