Fast and efficient STT switching in MTJ using additional transient pulse current

Sachin Pathak; Jongin Cha; Kangwook Jo; Hongil Yoon; Jongill Hong

doi:10.1063/1.4985129

Fast and efficient STT switching in MTJ using additional transient pulse current

Sachin Pathak, Jongin Cha, Kangwook Jo, Hongil Yoon, Jongill Hong

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We propose a profile of write pulse current-density to switch magnetization in a perpendicular magnetic tunnel junction to reduce switching time and write energy as well. Our simulated results show that an overshoot transient pulse current-density (current spike) imposed to conventional rectangular-shaped pulse current-density (main pulse) significantly improves switching speed that yields the reduction in write energy accordingly. For example, we could dramatically reduce the switching time by 80% and thereby reduce the write energy over 9% in comparison to the switching without current spike. The current spike affects the spin dynamics of the free layer and reduces the switching time mainly due to spin torque induced. On the other hand, the large Oersted field induced causes changes in spin texture. We believe our proposed write scheme can make a breakthrough in magnetic random access memory technology seeking both high speed operation and low energy consumption.

Original language	English
Article number	232401
Journal	Applied Physics Letters
Volume	110
Issue number	23
DOIs	https://doi.org/10.1063/1.4985129
Publication status	Published - 2017 Jun 5

Bibliographical note

Funding Information:
This work was supported in part by SK-Hynix semiconductor, Inc., Creative Materials Discovery Program (2015M3D1A1070465) through the NRF of Korea funded by the Ministry of Science, ICT and Future Planning, and Future Semiconductor Device Technology Development Program (10044723) funded by the Ministry of Trade, Industry and Energy and the Korea Semiconductor Research Consortium.

Publisher Copyright:
© 2017 Author(s).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4985129

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title = "Fast and efficient STT switching in MTJ using additional transient pulse current",

abstract = "We propose a profile of write pulse current-density to switch magnetization in a perpendicular magnetic tunnel junction to reduce switching time and write energy as well. Our simulated results show that an overshoot transient pulse current-density (current spike) imposed to conventional rectangular-shaped pulse current-density (main pulse) significantly improves switching speed that yields the reduction in write energy accordingly. For example, we could dramatically reduce the switching time by 80% and thereby reduce the write energy over 9% in comparison to the switching without current spike. The current spike affects the spin dynamics of the free layer and reduces the switching time mainly due to spin torque induced. On the other hand, the large Oersted field induced causes changes in spin texture. We believe our proposed write scheme can make a breakthrough in magnetic random access memory technology seeking both high speed operation and low energy consumption.",

author = "Sachin Pathak and Jongin Cha and Kangwook Jo and Hongil Yoon and Jongill Hong",

note = "Funding Information: This work was supported in part by SK-Hynix semiconductor, Inc., Creative Materials Discovery Program (2015M3D1A1070465) through the NRF of Korea funded by the Ministry of Science, ICT and Future Planning, and Future Semiconductor Device Technology Development Program (10044723) funded by the Ministry of Trade, Industry and Energy and the Korea Semiconductor Research Consortium. Publisher Copyright: {\textcopyright} 2017 Author(s).",

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doi = "10.1063/1.4985129",

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AU - Pathak, Sachin

AU - Cha, Jongin

AU - Jo, Kangwook

AU - Yoon, Hongil

AU - Hong, Jongill

N1 - Funding Information: This work was supported in part by SK-Hynix semiconductor, Inc., Creative Materials Discovery Program (2015M3D1A1070465) through the NRF of Korea funded by the Ministry of Science, ICT and Future Planning, and Future Semiconductor Device Technology Development Program (10044723) funded by the Ministry of Trade, Industry and Energy and the Korea Semiconductor Research Consortium. Publisher Copyright: © 2017 Author(s).

PY - 2017/6/5

Y1 - 2017/6/5

N2 - We propose a profile of write pulse current-density to switch magnetization in a perpendicular magnetic tunnel junction to reduce switching time and write energy as well. Our simulated results show that an overshoot transient pulse current-density (current spike) imposed to conventional rectangular-shaped pulse current-density (main pulse) significantly improves switching speed that yields the reduction in write energy accordingly. For example, we could dramatically reduce the switching time by 80% and thereby reduce the write energy over 9% in comparison to the switching without current spike. The current spike affects the spin dynamics of the free layer and reduces the switching time mainly due to spin torque induced. On the other hand, the large Oersted field induced causes changes in spin texture. We believe our proposed write scheme can make a breakthrough in magnetic random access memory technology seeking both high speed operation and low energy consumption.

AB - We propose a profile of write pulse current-density to switch magnetization in a perpendicular magnetic tunnel junction to reduce switching time and write energy as well. Our simulated results show that an overshoot transient pulse current-density (current spike) imposed to conventional rectangular-shaped pulse current-density (main pulse) significantly improves switching speed that yields the reduction in write energy accordingly. For example, we could dramatically reduce the switching time by 80% and thereby reduce the write energy over 9% in comparison to the switching without current spike. The current spike affects the spin dynamics of the free layer and reduces the switching time mainly due to spin torque induced. On the other hand, the large Oersted field induced causes changes in spin texture. We believe our proposed write scheme can make a breakthrough in magnetic random access memory technology seeking both high speed operation and low energy consumption.

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Fast and efficient STT switching in MTJ using additional transient pulse current

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