Fast and stable solution-processed transparent oxide thin-film transistor circuits

Kwang Ho Kim, Yong Hoon Kim, Hyun Jae Kim, Jeong In Han, Sung Kyu Park

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Fast and stable zinctinoxide (ZTO) thin-film transistor (TFT) circuits were fabricated by simple and effective solution processing. The solution-processed ZTO TFTs have shown saturation mobility > 2.5 ± 0.29 cm2/ V ċ s (W/L = 100/10 μm) and subthreshold slope < 0.4 ± 0.122 V/dec. The ZTO seven-stage ring oscillators have shown an oscillation frequency of ∼800 kHz with a supply voltage VDD = 60 V, corresponding to a propagation delay of < 90 ns per stage. In addition, with appropriate passivation onto the semiconductor channel area, the circuits have shown relatively stable operation even at a gate and source/drain bias voltage of > 50 V for several hours.

Original languageEnglish
Article number5716661
Pages (from-to)524-526
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number4
DOIs
Publication statusPublished - 2011 Apr 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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