Vertical aligned ZnO nanowires were grown by metal-organic chemical vapor deposition technique on Si substrate. X-ray diffraction patterns and the high-resolution transmission electron microscopy confirmed the single crystalline growth of the ZnO nanowires along [0 0 0 1] direction. In another experiment, BaF2 films were deposited on silicon substrate by thermal evaporation. The BaF2 films show polycrystalline nature along with a granular surface morphology. Based on the solubility of BaF2 film in cold water, BaF2 layer was used as a sacrificial layer for the patterning of ZnO nanowire arrays. A sharp edge was obtained between the hexagonal pattern and the surrounding nanowires, which is suitable for micropatterning of ZnO nanowires for electronic devices.
Bibliographical noteFunding Information:
This work was supported by the IT R&D Program of MKE/IITA (2008-F-023-01, Next generation future device fabricated by using nanojunction) and by Samsung Electronics Co. Ltd. (2008-8-2105). This work was also supported by the Second Stage of Brain Korea 21 Project in 2008.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry