Feasibility study of barium fluoride films as a sacrificial layer for patterning of ZnO nanowire arrays

J. P. Kar; J. H. Choi; J. M. Myoung

doi:10.1016/j.jcrysgro.2009.02.020

Feasibility study of barium fluoride films as a sacrificial layer for patterning of ZnO nanowire arrays

J. P. Kar, J. H. Choi, J. M. Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Vertical aligned ZnO nanowires were grown by metal-organic chemical vapor deposition technique on Si substrate. X-ray diffraction patterns and the high-resolution transmission electron microscopy confirmed the single crystalline growth of the ZnO nanowires along [0 0 0 1] direction. In another experiment, BaF₂ films were deposited on silicon substrate by thermal evaporation. The BaF₂ films show polycrystalline nature along with a granular surface morphology. Based on the solubility of BaF₂ film in cold water, BaF₂ layer was used as a sacrificial layer for the patterning of ZnO nanowire arrays. A sharp edge was obtained between the hexagonal pattern and the surrounding nanowires, which is suitable for micropatterning of ZnO nanowires for electronic devices.

Original language	English
Pages (from-to)	2372-2376
Number of pages	5
Journal	Journal of Crystal Growth
Volume	311
Issue number	8
DOIs	https://doi.org/10.1016/j.jcrysgro.2009.02.020
Publication status	Published - 2009 Apr 1

Bibliographical note

Funding Information:
This work was supported by the IT R&D Program of MKE/IITA (2008-F-023-01, Next generation future device fabricated by using nanojunction) and by Samsung Electronics Co. Ltd. (2008-8-2105). This work was also supported by the Second Stage of Brain Korea 21 Project in 2008.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2009.02.020

Cite this

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title = "Feasibility study of barium fluoride films as a sacrificial layer for patterning of ZnO nanowire arrays",

abstract = "Vertical aligned ZnO nanowires were grown by metal-organic chemical vapor deposition technique on Si substrate. X-ray diffraction patterns and the high-resolution transmission electron microscopy confirmed the single crystalline growth of the ZnO nanowires along [0 0 0 1] direction. In another experiment, BaF2 films were deposited on silicon substrate by thermal evaporation. The BaF2 films show polycrystalline nature along with a granular surface morphology. Based on the solubility of BaF2 film in cold water, BaF2 layer was used as a sacrificial layer for the patterning of ZnO nanowire arrays. A sharp edge was obtained between the hexagonal pattern and the surrounding nanowires, which is suitable for micropatterning of ZnO nanowires for electronic devices.",

author = "Kar, {J. P.} and Choi, {J. H.} and Myoung, {J. M.}",

note = "Funding Information: This work was supported by the IT R&D Program of MKE/IITA (2008-F-023-01, Next generation future device fabricated by using nanojunction) and by Samsung Electronics Co. Ltd. (2008-8-2105). This work was also supported by the Second Stage of Brain Korea 21 Project in 2008.",

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doi = "10.1016/j.jcrysgro.2009.02.020",

language = "English",

volume = "311",

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AU - Kar, J. P.

AU - Choi, J. H.

AU - Myoung, J. M.

N1 - Funding Information: This work was supported by the IT R&D Program of MKE/IITA (2008-F-023-01, Next generation future device fabricated by using nanojunction) and by Samsung Electronics Co. Ltd. (2008-8-2105). This work was also supported by the Second Stage of Brain Korea 21 Project in 2008.

PY - 2009/4/1

Y1 - 2009/4/1

N2 - Vertical aligned ZnO nanowires were grown by metal-organic chemical vapor deposition technique on Si substrate. X-ray diffraction patterns and the high-resolution transmission electron microscopy confirmed the single crystalline growth of the ZnO nanowires along [0 0 0 1] direction. In another experiment, BaF2 films were deposited on silicon substrate by thermal evaporation. The BaF2 films show polycrystalline nature along with a granular surface morphology. Based on the solubility of BaF2 film in cold water, BaF2 layer was used as a sacrificial layer for the patterning of ZnO nanowire arrays. A sharp edge was obtained between the hexagonal pattern and the surrounding nanowires, which is suitable for micropatterning of ZnO nanowires for electronic devices.

AB - Vertical aligned ZnO nanowires were grown by metal-organic chemical vapor deposition technique on Si substrate. X-ray diffraction patterns and the high-resolution transmission electron microscopy confirmed the single crystalline growth of the ZnO nanowires along [0 0 0 1] direction. In another experiment, BaF2 films were deposited on silicon substrate by thermal evaporation. The BaF2 films show polycrystalline nature along with a granular surface morphology. Based on the solubility of BaF2 film in cold water, BaF2 layer was used as a sacrificial layer for the patterning of ZnO nanowire arrays. A sharp edge was obtained between the hexagonal pattern and the surrounding nanowires, which is suitable for micropatterning of ZnO nanowires for electronic devices.

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Feasibility study of barium fluoride films as a sacrificial layer for patterning of ZnO nanowire arrays

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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