Femtosecond all-optical AND gates based on low-temperature-grown Be-doped strained InGaAs/InAlAs multiple quantum wells

R. Takahashi, W. Y. Choi, Y. Kawamura, H. Iwamura

Research output: Contribution to journalConference article

8 Citations (Scopus)

Abstract

An ultrafast all-optical AND gate at 1.55 μm based on low-temperature-grown Be-doped strained InGaAs/InAlAs multi-quantum wells is developed. The device has femtosecond response time, very large contrast ratio, and wide operational wavelength range as well as polarization insensitivity. The values obtained are deemed to be the highest among all the semiconductor-based all-optical AND gates reported to date.

Original languageEnglish
Pages (from-to)343-344
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume1
Publication statusPublished - 1995 Dec 1
EventProceedings of the 1995 8th Annual Meeting of the IEEE Lasers and Electro-Optics Society. Part 1 (of 2) - San Francisco, CA, USA
Duration: 1995 Oct 301995 Nov 2

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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