Femtosecond all-optical AND gates based on low-temperature-grown Be-doped strained InGaAs/InAlAs multiple quantum wells

R. Takahashi, W. Y. Choi, Y. Kawamura, H. Iwamura

Research output: Contribution to journalConference article

8 Citations (Scopus)

Abstract

An ultrafast all-optical AND gate at 1.55 μm based on low-temperature-grown Be-doped strained InGaAs/InAlAs multi-quantum wells is developed. The device has femtosecond response time, very large contrast ratio, and wide operational wavelength range as well as polarization insensitivity. The values obtained are deemed to be the highest among all the semiconductor-based all-optical AND gates reported to date.

Original languageEnglish
Pages (from-to)343-344
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume1
Publication statusPublished - 1995 Dec 1

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Semiconductor quantum wells
Polarization
Semiconductor materials
Wavelength
Temperature

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

Cite this

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abstract = "An ultrafast all-optical AND gate at 1.55 μm based on low-temperature-grown Be-doped strained InGaAs/InAlAs multi-quantum wells is developed. The device has femtosecond response time, very large contrast ratio, and wide operational wavelength range as well as polarization insensitivity. The values obtained are deemed to be the highest among all the semiconductor-based all-optical AND gates reported to date.",
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Femtosecond all-optical AND gates based on low-temperature-grown Be-doped strained InGaAs/InAlAs multiple quantum wells. / Takahashi, R.; Choi, W. Y.; Kawamura, Y.; Iwamura, H.

In: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, Vol. 1, 01.12.1995, p. 343-344.

Research output: Contribution to journalConference article

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AU - Takahashi, R.

AU - Choi, W. Y.

AU - Kawamura, Y.

AU - Iwamura, H.

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AB - An ultrafast all-optical AND gate at 1.55 μm based on low-temperature-grown Be-doped strained InGaAs/InAlAs multi-quantum wells is developed. The device has femtosecond response time, very large contrast ratio, and wide operational wavelength range as well as polarization insensitivity. The values obtained are deemed to be the highest among all the semiconductor-based all-optical AND gates reported to date.

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