Abstract
An ultrafast all-optical AND gate at 1.55 μm based on low-temperature-grown Be-doped strained InGaAs/InAlAs multi-quantum wells is developed. The device has femtosecond response time, very large contrast ratio, and wide operational wavelength range as well as polarization insensitivity. The values obtained are deemed to be the highest among all the semiconductor-based all-optical AND gates reported to date.
| Original language | English |
|---|---|
| Pages (from-to) | 343-344 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 1 |
| Publication status | Published - 1995 |
| Event | Proceedings of the 1995 8th Annual Meeting of the IEEE Lasers and Electro-Optics Society. Part 1 (of 2) - San Francisco, CA, USA Duration: 1995 Oct 30 → 1995 Nov 2 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering