Ferroelectric nonvolatile nanowire memory circuit using a single ZnO nanowire and copolymer top layer

Young Tack Lee, Pyo Jin Jeon, Kwang H. Lee, Ryong Ha, Heon Jin Choi, Seongil Im

Research output: Contribution to journalArticle

34 Citations (Scopus)


A one-dimensional nonvolatile ferroelectric memory inverter circuit is demonstrated for the first time in a single ZnO nanowire. The circuit exhibits a large memory window and dynamic program/erase behavior. One part of the ZnO nanowire forms the channel of a top-gate ferroelectric field-effect transistor with a ferroelectric polymer while the rest is used as resistors.

Original languageEnglish
Pages (from-to)3020-3025
Number of pages6
JournalAdvanced Materials
Issue number22
Publication statusPublished - 2012 Jun 12


All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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