Ferroelectric nonvolatile nanowire memory circuit using a single ZnO nanowire and copolymer top layer

Young Tack Lee, Pyo Jin Jeon, Kwang H. Lee, Ryong Ha, Heon-Jin Choi, Seongil Im

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

A one-dimensional nonvolatile ferroelectric memory inverter circuit is demonstrated for the first time in a single ZnO nanowire. The circuit exhibits a large memory window and dynamic program/erase behavior. One part of the ZnO nanowire forms the channel of a top-gate ferroelectric field-effect transistor with a ferroelectric polymer while the rest is used as resistors.

Original languageEnglish
Pages (from-to)3020-3025
Number of pages6
JournalAdvanced Materials
Volume24
Issue number22
DOIs
Publication statusPublished - 2012 Jun 12

Fingerprint

Nanowires
Ferroelectric materials
Copolymers
Data storage equipment
Networks (circuits)
Field effect transistors
Resistors
Polymers

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lee, Young Tack ; Jeon, Pyo Jin ; Lee, Kwang H. ; Ha, Ryong ; Choi, Heon-Jin ; Im, Seongil. / Ferroelectric nonvolatile nanowire memory circuit using a single ZnO nanowire and copolymer top layer. In: Advanced Materials. 2012 ; Vol. 24, No. 22. pp. 3020-3025.
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Ferroelectric nonvolatile nanowire memory circuit using a single ZnO nanowire and copolymer top layer. / Lee, Young Tack; Jeon, Pyo Jin; Lee, Kwang H.; Ha, Ryong; Choi, Heon-Jin; Im, Seongil.

In: Advanced Materials, Vol. 24, No. 22, 12.06.2012, p. 3020-3025.

Research output: Contribution to journalArticle

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