TY - GEN
T1 - Ferroelectric polarization in poly(vinylidene fluoride- chlorotrifluoroethylene) thin films and non-volatile ferroelectric memory with oligothiophene single-crystal
AU - Kim, R. H.
AU - Kang, S. J.
AU - Park, C.
PY - 2011
Y1 - 2011
N2 - In conclusion, high-performance FeFET memory devices were developed with single-crystal oligothiophene as an active channel. We could confirm that remnant polarization was maintained when the films were annealed above melting temperature of PVDF CTFE. And with this film, device showed not only high on/off ratio about 103 but also large hysteresis memory window with saturated region. With above results from measurement of remnant polarization and memory device property, we could realize that PVDF CTFE thin film has high thermal stability in various conditions of annealing temperature.
AB - In conclusion, high-performance FeFET memory devices were developed with single-crystal oligothiophene as an active channel. We could confirm that remnant polarization was maintained when the films were annealed above melting temperature of PVDF CTFE. And with this film, device showed not only high on/off ratio about 103 but also large hysteresis memory window with saturated region. With above results from measurement of remnant polarization and memory device property, we could realize that PVDF CTFE thin film has high thermal stability in various conditions of annealing temperature.
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U2 - 10.1109/ISE.2011.6085057
DO - 10.1109/ISE.2011.6085057
M3 - Conference contribution
AN - SCOPUS:84855256991
SN - 9781457710230
T3 - Proceedings - International Symposium on Electrets
SP - 211
EP - 212
BT - 2011 - 14th International Symposium on Electrets, ISE 2011
T2 - 2011 IEEE 14th International Symposium on Electrets, ISE 2011
Y2 - 28 August 2011 through 31 August 2011
ER -