Ferroelectric polarization in poly(vinylidene fluoride- chlorotrifluoroethylene) thin films and non-volatile ferroelectric memory with oligothiophene single-crystal

R. H. Kim; S. J. Kang; C. Park

doi:10.1109/ISE.2011.6085057

Ferroelectric polarization in poly(vinylidene fluoride- chlorotrifluoroethylene) thin films and non-volatile ferroelectric memory with oligothiophene single-crystal

R. H. Kim, S. J. Kang, C. Park

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In conclusion, high-performance FeFET memory devices were developed with single-crystal oligothiophene as an active channel. We could confirm that remnant polarization was maintained when the films were annealed above melting temperature of PVDF CTFE. And with this film, device showed not only high on/off ratio about 103 but also large hysteresis memory window with saturated region. With above results from measurement of remnant polarization and memory device property, we could realize that PVDF CTFE thin film has high thermal stability in various conditions of annealing temperature.

Original language	English
Title of host publication	2011 - 14th International Symposium on Electrets, ISE 2011
Pages	211-212
Number of pages	2
DOIs	https://doi.org/10.1109/ISE.2011.6085057
Publication status	Published - 2011
Event	2011 IEEE 14th International Symposium on Electrets, ISE 2011 - Montpellier, France Duration: 2011 Aug 28 → 2011 Aug 31

Publication series

Name	Proceedings - International Symposium on Electrets

Other

Other	2011 IEEE 14th International Symposium on Electrets, ISE 2011
Country	France
City	Montpellier
Period	11/8/28 → 11/8/31

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/ISE.2011.6085057

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Kim, R. H., Kang, S. J., & Park, C. (2011). Ferroelectric polarization in poly(vinylidene fluoride- chlorotrifluoroethylene) thin films and non-volatile ferroelectric memory with oligothiophene single-crystal. In 2011 - 14th International Symposium on Electrets, ISE 2011 (pp. 211-212). [6085057] (Proceedings - International Symposium on Electrets). https://doi.org/10.1109/ISE.2011.6085057

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title = "Ferroelectric polarization in poly(vinylidene fluoride- chlorotrifluoroethylene) thin films and non-volatile ferroelectric memory with oligothiophene single-crystal",

abstract = "In conclusion, high-performance FeFET memory devices were developed with single-crystal oligothiophene as an active channel. We could confirm that remnant polarization was maintained when the films were annealed above melting temperature of PVDF CTFE. And with this film, device showed not only high on/off ratio about 103 but also large hysteresis memory window with saturated region. With above results from measurement of remnant polarization and memory device property, we could realize that PVDF CTFE thin film has high thermal stability in various conditions of annealing temperature.",

author = "Kim, {R. H.} and Kang, {S. J.} and C. Park",

year = "2011",

doi = "10.1109/ISE.2011.6085057",

language = "English",

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series = "Proceedings - International Symposium on Electrets",

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Kim, RH, Kang, SJ & Park, C 2011, Ferroelectric polarization in poly(vinylidene fluoride- chlorotrifluoroethylene) thin films and non-volatile ferroelectric memory with oligothiophene single-crystal. in 2011 - 14th International Symposium on Electrets, ISE 2011., 6085057, Proceedings - International Symposium on Electrets, pp. 211-212, 2011 IEEE 14th International Symposium on Electrets, ISE 2011, Montpellier, France, 11/8/28. https://doi.org/10.1109/ISE.2011.6085057

Ferroelectric polarization in poly(vinylidene fluoride- chlorotrifluoroethylene) thin films and non-volatile ferroelectric memory with oligothiophene single-crystal. / Kim, R. H.; Kang, S. J.; Park, C.

2011 - 14th International Symposium on Electrets, ISE 2011. 2011. p. 211-212 6085057 (Proceedings - International Symposium on Electrets).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - In conclusion, high-performance FeFET memory devices were developed with single-crystal oligothiophene as an active channel. We could confirm that remnant polarization was maintained when the films were annealed above melting temperature of PVDF CTFE. And with this film, device showed not only high on/off ratio about 103 but also large hysteresis memory window with saturated region. With above results from measurement of remnant polarization and memory device property, we could realize that PVDF CTFE thin film has high thermal stability in various conditions of annealing temperature.

AB - In conclusion, high-performance FeFET memory devices were developed with single-crystal oligothiophene as an active channel. We could confirm that remnant polarization was maintained when the films were annealed above melting temperature of PVDF CTFE. And with this film, device showed not only high on/off ratio about 103 but also large hysteresis memory window with saturated region. With above results from measurement of remnant polarization and memory device property, we could realize that PVDF CTFE thin film has high thermal stability in various conditions of annealing temperature.

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Kim RH, Kang SJ, Park C. Ferroelectric polarization in poly(vinylidene fluoride- chlorotrifluoroethylene) thin films and non-volatile ferroelectric memory with oligothiophene single-crystal. In 2011 - 14th International Symposium on Electrets, ISE 2011. 2011. p. 211-212. 6085057. (Proceedings - International Symposium on Electrets). https://doi.org/10.1109/ISE.2011.6085057