Ferroelectric properties of direct-patterned half-micron thick PZT film

Sang Woo Bae, Hyung Ho Park, Tae Song Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Ferroelectric properties of direct-patterned PZT(PbZr 0.52Ti 0.48O 3) films with 460 μm × 460 μm size and 510 nm thick were analyzed for applying to micro-detecting devices. A photosensitive solution containing ortho-nitrobenzaldehyde was used for the preparation of direct-patterned PZT film. PZT solution was coated on Pt(1 1 1)/Ti/SiO 2/Si(1 0 0) substrate for three times to obtain half-micron thick film and three times of direct-patterning process were repeated to define a pattern on multi-layer PZT film. Through intermediate and final anneal procedure of direct-patterned PZT film, any shrinkage along horizontal direction was not observed within this experimental condition, i.e., the size of the pattern was preserved after annealing, only a thickness reduction was observed after each annealing treatment. Ferroelectric properties of direct-patterned PZT film with 460 μm × 460 μm size and 510 nm thick were compared with those of un-patterned conventional PZT film and shown to be almost the same. Through this work, the high potentiality of direct-patternable PZT film for applying to micro-devices without the introduction of physical damages from dry-etching could be confirmed.

Original languageEnglish
Pages (from-to)548-552
Number of pages5
JournalSensors and Actuators, A: Physical
Volume125
Issue number2
DOIs
Publication statusPublished - 2006 Jan 10

Fingerprint

Thick films
Ferroelectric materials
thick films
2-nitrobenzaldehyde
Annealing
Dry etching
Multilayer films
annealing
shrinkage
etching
damage
Substrates
preparation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering

Cite this

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abstract = "Ferroelectric properties of direct-patterned PZT(PbZr 0.52Ti 0.48O 3) films with 460 μm × 460 μm size and 510 nm thick were analyzed for applying to micro-detecting devices. A photosensitive solution containing ortho-nitrobenzaldehyde was used for the preparation of direct-patterned PZT film. PZT solution was coated on Pt(1 1 1)/Ti/SiO 2/Si(1 0 0) substrate for three times to obtain half-micron thick film and three times of direct-patterning process were repeated to define a pattern on multi-layer PZT film. Through intermediate and final anneal procedure of direct-patterned PZT film, any shrinkage along horizontal direction was not observed within this experimental condition, i.e., the size of the pattern was preserved after annealing, only a thickness reduction was observed after each annealing treatment. Ferroelectric properties of direct-patterned PZT film with 460 μm × 460 μm size and 510 nm thick were compared with those of un-patterned conventional PZT film and shown to be almost the same. Through this work, the high potentiality of direct-patternable PZT film for applying to micro-devices without the introduction of physical damages from dry-etching could be confirmed.",
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Ferroelectric properties of direct-patterned half-micron thick PZT film. / Bae, Sang Woo; Park, Hyung Ho; Kim, Tae Song.

In: Sensors and Actuators, A: Physical, Vol. 125, No. 2, 10.01.2006, p. 548-552.

Research output: Contribution to journalArticle

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